TRANSISTOR TCD 100 Search Results

13002a

Abstract: 13002C TRANSISTOR TCD 100 13002B TRANSISTOR NPN 13002e transistor 13002e 13002B 13002 FLUORESCENT LAMPS CFLS 13002b TRANSISTOR
Contextual Info: CD13002 TO-92 PLASTIC PACKAGE NPN SILICON PLANAR EPITAXIAL,HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR Compact Fluorescent Lamps CFLS E ABSOLUTE MAXIMUM RATING (Ta =25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO

TRANSISTOR TCD 100

Abstract: SRAM 6116 AN-203 AN203 AN231
Contextual Info: Application Note AN-231 Smart ZBT SRAMs: Providing System Solutions by Pat Lasserre Introduction With the drive towards an increasingly connected world comes the need for designers to increase system bandwidth. More efficient and innovative memory solutions are needed in order to address this need.

13002C

Abstract: 13002B TRANSISTOR NPN TRANSISTOR TCD 100 transistor 13002e 13002a 13002B 13002C TRANSISTOR 13002A transistor 13002e 13002
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR CD13002 TCD13002 Tin Lead Part LEAD FREE TO-92 Plastic Package E CB Compact Fluorescent Lamps (CFLS)

13002C TRANSISTOR

Abstract: 13002B TRANSISTOR NPN transistor 13002C transistor 13002e transistor+13002e
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR CD13002 TCD13002 Tin Lead Part LEAD FREE TO-92 Plastic Package E CB Compact Fluorescent Lamps (CFLS)

AADY

Abstract: 6A6D BATTERY CHARGE MAX111 MAX1115 MAX1115EKA MAX1116 MAX1116EKA 10KSPS maxim 2112
Contextual Info: 19-1822; Rev 0; 11/00 Single-Supply, Low-Power, Serial 8-Bit ADCs Features ♦ Single Supply +2.7V to +3.6V MAX1115 +4.5V to +5.5V (MAX1116) ♦ Input Voltage Range: 0 to VREF ♦ Internal Track/Hold; 100kHz Sampling Rate ♦ Internal Reference +2.048V (MAX1115)

TRANSISTOR TCD 100

Abstract: psa 200 power supply WINDOW COMPARATOR 125OC PS12 PS12NG-G power on sequence CIRCUIT diagram
Contextual Info: PS12 Quad Power Sequencing Controller Features General Description ► Power supply sequencer with four outputs Many systems require that their power supplies are enabled and disabled sequentially in order to reduce transient current demand on the power bus, or to avoid damage to components

74HCT00 HARRIS

Abstract: AN9740 HARRIS 74HCT123 transistor 9740 diode 1334 74HCT00 74HCT193 74HCT32 HA4600
Contextual Info: Harris Semiconductor No. AN9740 Harris Linear July 1997 Digital Control Selects The Number of Analog Cycles and Burst Frequency Authors: Alan Erzinger and Ron Mancini Introduction Repetitive pulse bursts are required for impulse testing and for burst data transmission schemes. Impulse testing subjects the device under test to a unit impulse or doublet, and

rfm110

Contextual Info: RFM113W Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: 240 to 480 MHz „ OOK, FSK and GFSK Modulation „ Symbol Rate: y 0.5 to 30 ksps OOK y 0.5 to 100 ksps (FSK) „ Deviation: 1.0 to 200 kHz

hoperf

Abstract: transistor SMD a10a
Contextual Info: W RFM119W/RFM119SW Featurs Embedded EEPROM „ y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: 240 to 960 MHz „ FSK, GFSK and OOK Modulation „ Symbol Rate: 0.5 to 100 ksps FSK/GFSK 0.5 to 30 ksps (OOK) „ Deviation: 1.0 to 200 kHz

TR1602A

Contextual Info: CDP1854A/3, CDP1854AC/3 HARRIS S E M I C O N D U C T O R High Reliability CMOS Programmable Universal Asynchronous Receiver/Transmitter UART M a rc h 1 9 9 7 Features Description • Two Operating Modes The CDP1854A/3 and CDP1854AC/3 are high reliability

MAX111

Abstract: MAX1115 MAX1115EKA MAX1116 MAX1116EKA AADU maxim 2112 TRANSISTOR TCD 100
Contextual Info: 19-1822; Rev 1; 2/02 Single-Supply, Low-Power, Serial 8-Bit ADCs The MAX1115/MAX1116 low-power, 8-bit, analog-todigital converters ADCs feature an internal track/hold (T/H), voltage reference, VDD monitor, clock, and serial interface. The MAX1115 is specified from +2.7V to

Contextual Info: 19-1822; Rev 1; 2/02 Single-Supply, Low-Power, Serial 8-Bit ADCs The MAX1115/MAX1116 low-power, 8-bit, analog-todigital converters ADCs feature an internal track/hold (T/H), voltage reference, VDD monitor, clock, and serial interface. The MAX1115 is specified from +2.7V to

Contextual Info: h 7 > y X $ / T ransistors T 1 I M IMT1 7 yfvu _5 :7 K < - ^ - / u Kt 7 W X /General Small Signal Amp. Isolated Mini-Mold Device • ^ ff^ & lII/'D im e n s io n s U n it: mm 1) SM T (SC-59) 2 -fdlCO h t T I'5 o s*>j 7 > v X J A '" A 2) S M T ( 7 ) g f t g S t i l C j : U ,

TRANSISTOR TCD 100

Abstract: 3n123 teledyne transistor Transistor Bo 17 BU100
Contextual Info: TELEDYNE COMPONENTS EflE D • ûW bOa □GGt.5cì3 1 M LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR G E O M E T R Y 45Q ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G PARAM ETER SYM BO L 3N123 U N IT S Collector to Base Voltage

Contextual Info: Preliminary UtRAM K1B3216B7D Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft - Design target Remark December 21, 2004 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

MAX1117EKA

Abstract: MAX1118 MAX1118EKA MAX1119 MAX1119EKA MAX1117 7eka
Contextual Info: 19-1857; Rev 0; 11/00 Single-Supply, Low-Power, 2-Channel, Serial 8-Bit ADCs The full-scale analog input range is determined by the internal reference of +2.048V MAX1117 or +4.096V (MAX1119), or by an externally applied reference ranging from +1V to VDD (MAX1118). All devices feature an

Contextual Info: Preliminary UtRAM K1B3216B8E 32Mb 2M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: K1B6416B8D UtRAM 64Mb 4M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: Preliminary UtRAM K1B1616BDB 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: Preliminary UtRAM K1B1616B8B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

MCache

Abstract: PBSRAM IDT71F432 IDT71F432S66 IDT71F432S75
Contextual Info: FEATURES: • • • • • • • • • • Uses IDT's Fusion Memory technology 66 and 75 MHz speed grades 3-1-1-1 Pipelined Burst Read 3-1-1-1 Pipelined Burst Write 3-1-1-1-1-1-1-1. extended pipelined operation Refresh overhead consumes less than 0.5% of cycles

K1B2816

Contextual Info: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length

K1B5616BBM

Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
Contextual Info: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

CAT5251

Abstract: CAT5251WI-00 CAT5251WI-50 CAT5251WI-50-T1 CAT5251YI-00 CAT5251YI-50 MS-013
Contextual Info: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 254 resistor taps per potentiometer „ End to end resistance 50kΩ or 100kΩ „ Potentiometer control and memory access via