TRANSISTOR T1A 80 Search Results

transistor t1A

Abstract: SuperSOT-23 Royer EPS115 "dummy load" SOT323 T1A 101J CDH74-101JC t1a transistor transistor t1A 80
Contextual Info: Design Note 55 Issue 1 July 2000 A High Efficiency Royer Driver for a Scanner CCFL A practical application using Zetex’s very low VCEsat transistor is discussed here for driving a 4.5W CCFL lamp 240.0mm x 3.0mm diameter as used in a scanner. The circuit can be

1N5761

Contextual Info: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

CY2071A

Abstract: CY2071AF CY2071AFI CY2071AI CY2081 CY2291 CY2291F CY2292 CY2292F CY2907
Contextual Info: CY2071A Single-PLL General-Purpose EPROM Programmable Clock Generator Features Benefits • Single phase-locked loop architecture • EPROM programmability • Factory-programmable CY2071A, CY2071AI or field-programmable (CY2071AF, CY2071AFI) device options

1N5761

Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Contextual Info: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)

toroid FT10

Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
Contextual Info: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

1N5761

Abstract: si 1N4007 transistor toroid FT10 1N4007 BUL45 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductort BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

1N5761

Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
Contextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)

MTD20NO6HD

Abstract: mbro530 MBRO530T1 PC40-EPC17 LT1693 inverter 12v to 220 ac mosfet based CPHS-EFD20-1S-10P marking t1c SMD403 2N7002 PHILIPS MARKING
Contextual Info: LTC1693 High Speed Single/Dual MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1693 family drives power MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. Dual MOSFET Drivers in SO-8 Package

BA rx transistor

Abstract: HC4538 hc4538 application note transistor t1A HD74HC4538
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

nec 7915

Abstract: 2SK1994 10KW MEI-1202 TEA-1035 7915 transistor
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1994 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ncl30000

Abstract: switching transformer winding NDD05N50 transformer bobbin LLC resonant transformer optocoupler for ZCD SPD02N80 transformer winding datasheet t1b diode transformer demagnetization
Contextual Info: AND8462/D Tips and Tricks for Optimizing NCL30000 based LED Drivers Prepared by: Jim Young http://onsemi.com ON Semiconductor APPLICATION NOTE a short circuit condition. The negative voltage shown corresponds to the on-time of the power FET which then becomes positive after the FET turns off. The transformer

vogt transformer 545 35

Abstract: TRANSISTOR BC 545 smd vogt transformer 545 13 vogt transformer 545 23 vogt 545 Nippon Chemi-Con KMG AN1934 VOGT U1 545 vogt transformer abstract on non isolated flyback converter
Contextual Info: AN1934 - APPLICATION NOTE VIPower: VIPer12A NON ISOLATED FLYBACK CONVERTER REFERENCE BOARD P. LIDAK - R. HAUSER ABSTRACT Presented circuit can be used to produce multiple outputs, non isolated positive or negative voltage. It is dedicated for building an auxiliary power supply based on the VIPer12AS monolithic device.

35CV330AX

Abstract: DIODE JS4 18121C105KAT9A CONN SOCKET conn sil ac proslic max AN74 VPh5-0155 ISOmodem CMR3-02
Contextual Info: AN74 SiL I N K PS-EVB U S E R ’ S G U I D E Introduction The SiLinkPS-EVB is a system power supply board that provides all the necessary supply voltages for a variety of Silicon Laboratories’ ProSLIC and silicon DAA evaluation boards. When used with an appropriate ac/

transistor t2a

Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200

specifications of 1n4007 diode

Abstract: 1N4007 operating frequency 1N4007 diode information 1N4937 diode
Contextual Info: UM10564 UBA2017DB1064 2 x 28 W T5 demo board Rev. 1 — 20 August 2012 User manual Document information Info Content Keywords UBA2017P, 2 x 28 W T5 ballast, passive PFC, improved valley fill, continuous input current Abstract This document describes the UBA2017DB1064 demo board for

A3302

Abstract: A3302PC MA3302 MA3302DC MA330 A239A MA239A A2901pc uA339 uA3302
Contextual Info: ¡iA 139 juA239 /uA339 juA2901 juA3302 Quad Comparators FAIRCHILD A Schlumberger Company Linear Products Connection Diagram 14-Pin DIP Descripti n Th n A \3 9 se rie s co n sists of four independent precision voltage com parators designed sp ecifically to operate from a single power supply. Operation from

teo2537f

Abstract: bc337 pin out diagram VREG12 c41 transistor switches BC337 2x30mH 4614 d83 thomson d92 02 EQUAL BYV10-20
Contextual Info: STV4614C SWITCH MODE POWER SUPPLY CONTROLLER . . . . . ADVANCE DATA FLYBACK CONVERTER POWER SUPPLY CURRENT MODE CONTROLLED SMPS LOW POWER CONSUMPTION PRIMARY AND SECONDARY REGULATION CONTROL OF CONDUCTION TIME AND OF SWITCHING FREQUENCY REVERSE CURRENT CONCEPT

transistor Electronic ballast "INDUCTION LAMP"

Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
Contextual Info: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic

MMDF4N02

Contextual Info: December 1994 % M i c r o L in e a r ML4862 Battery Power Control 1C GENERAL DESCRIPTION FEATURES The M L4862 is a complete solution for DC to DC conversion and power management in multi-cell battery powered portable computers and instruments. Several advanced techniques are incorporated in the 1C for the

TTRN-038S

Abstract: Diagram igbt flash 12v igbt LDT565630T-042 FGR15N40A strobe IGBT Xenon Flash 6v circuit diagram of igbt based battery charger n fet 60v 50a MP3352
Contextual Info: MP3352 60V, 2.5A Integrated Photo Flash Charger with IGBT Driver and Quench The Future of Analog IC Technology DESCRIPTION FEATURES The MP3352 is a fast, highly efficient, precision high-voltage photo-flash charger with integrated IGBT driver for xenon flash applications. The

L4862

Abstract: ic LC 7218 3132V F4N02
Contextual Info: December 1994 % M ic r o Linear ML4862 Battery Power Control 1C GENERAL DESCRIPTION FEATURES The M L4862 is a complete solution for DC to DC conversion and power management in multi-cell battery powered portable computers and instruments. Several advanced techniques are incorporated in the 1C for the

TP9-12

Abstract: ACPL-36JV IGBT DRIVER SCHEMATIC hcpl igbt desaturation driver schematic automotive inverter safety interlock TL912
Contextual Info: ACPL-36JV-000E Automotive Gate Drive Optocoupler with R2Coupler Isolation, 2.5 Amp Output Current, Integrated Desaturation VCE Detection and Fault Status Feedback Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available;