TRANSISTOR T18 Search Results

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

BUK445

Abstract: BUK445-60A BUK445-60B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK441

Abstract: BUK441-60A BUK441-60B 3909
Contextual Info: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.

TRANSISTOR 1FU

Abstract: BUK444 BUK444-200A BUK444-200B
Contextual Info: PHILIPS INTERNATIONAL bSE 3> • 7110fl2b 0Db3Rtil S3T ■ PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK445-600B

Abstract: 100-P
Contextual Info: PHILIPS INTERNATIONAL b5E » B 711065b DDbMQll 7b3 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in

Contextual Info: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

BUK444-400B

Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sti D0fci3^bti Dll M P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK445-500B

Contextual Info: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: m 2N1671B \ \ UNIJUNCTION TRANSISTOR DESCRIPTION: PACKAGE STYLE T-18 MOD The 2N1671B is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. MAXIMUM RATINGS 2.0 A lc V (PULSED) 30 V ce P diss 450 mW @ Tc = 25 °C

BUK445-100A

Abstract: 1E05 BUK445 BUK445-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK445

Abstract: BUK445-200A BUK445-200B m 713
Contextual Info: bSE T> PHILIPS INTERNATIONAL m 711D6Sb OObBSTb flS^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

K545

Abstract: BUK545 BUK545-200A BUK545-200B
Contextual Info: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bbS3T31 0030545 S^2 M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

2N1671A

Abstract: unijunction transistor
Contextual Info: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A lc (PULSED) V ce 30 V P diss 450 mW @ Tc = 25 °C

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bhS3cm □020570 ^ PowerMOS transistor Logic Level FET BUK542-60A BUK542-60B r - 3^-09 SYMBOL CO N-channel enhancem ent mode logic level field-effect power transistor in a plastic full-pack envelope. Th e device is intended for use in

TRANSISTOR 40

Abstract: BUK474-800A
Contextual Info: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bb53T31 0 0 3 0 7 5 5 ET3 • APX Product Specification Philips Semiconductors BUK543-100A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: N AMER PHI LIP S/ DI SCR ET E 25 E D b b 5 3 T 31 0 0 2 0 4 1 0 =1 • BUK445-500A BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK543

Abstract: BUK543-100A BUK543-100B
Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor

T1800GB45A

Contextual Info: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53T31 CI030745 3S4 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET_ _ GENERAL DESCRIPTION N -channel enhancem ent mode

IC 7446 pin diagram

Abstract: la 7673 YJ-7 IC 7446 A ic 7446 transistor replacement equivalent of transistor 7446 IC 7446 diagram circuit CT1839
Contextual Info: CT1839/CT1842 Linear Power Hybrid with Overload Protection Features General Description • High-power hybrid equivalent of transistor switch CT1839— 20 Amp peak, CT1842— 10 Amp peak • Protected against short circuit or excessive power dissipation with foldback and temperature sensing

K476

Abstract: BUK476 BUK476-1000B 3909 transistor BU 608
Contextual Info: PHILIPS INTERNATIONAL SbE D m 711002b □DMMbb'i 17e! BiPHIN Philips Components Data sheet status Preliminary specification date of issue March 1991 B U K 4 7 6 - 1O O O A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N -channel enhancem ent mode

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching