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    TRANSISTOR T Search Results

    TRANSISTOR T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor sc 308

    Abstract: DTC114TE SMD310
    Contextual Info: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 PDF

    2SA1743

    Abstract: C11531E
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


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    2SA1743 2SA1743 C11531E PDF

    IC-3479

    Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
    Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits


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    PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH PDF

    MMBT3906 vishay

    Contextual Info: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case


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    MMBT3906 MMBT3904 2N3906. OT-23 MMBT3906-GS18 MMBT3906-GS08 D-74025 19-May-04 MMBT3906 vishay PDF

    2SB1453

    Abstract: NEC 2SB1453
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid


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    2SB1453 2SB1453 NEC 2SB1453 PDF

    transistor 1000V 6A

    Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
    Contextual Info: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


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    SQD300AA100 E76102 SQD300AA100 SQD300AA120 transistor 1000V 6A diode 6A 1000v transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor PDF

    IC A 3120

    Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor
    Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 (M) SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


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    SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V IC A 3120 Transistor AC 51 bx transistor a 3120 ic VCEX1000V derating factor PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter


    OCR Scan
    DTA143EE OT-416/SC-90 0CH305G PDF

    QCA300BA60

    Abstract: 675g M6 transistor
    Contextual Info: TRANSISTOR MODULE(Hi-β) QCA300BA60 UL;E76102 (M) QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


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    QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor PDF

    2SC4815

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.


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    2SC4815 2SC4815 PDF

    Contextual Info: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic


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    C11531E) PDF

    RN1110FS

    Abstract: RN1111FS RN2110FS RN2111FS
    Contextual Info: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    RN1110FS RN1111FS RN1110FS, RN2110FS, RN2111FS RN1111FS RN2110FS RN2111FS PDF

    M63828DP

    Abstract: 16PIN M63828WP 16P4X-A IL500
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


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    M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500 PDF

    NTE106

    Contextual Info: NTE106 Silicon PNP Transistor Switching Transistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V


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    NTE106 200mA NTE106 PDF

    Contextual Info: UTC TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip32C TO-220


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    TIP31C TIP31C tip32C O-220 QW-R203-010 PDF

    transistor Al6

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9K DUAL TRANSISTOR COMPOUND TRANSISTORS UG9K „ DESCRIPTION As a compound transistor with resistor, the UTC UG9K is for switching application. „ FEATURES * Silicon epitaxial type * The internal tow transistor elements are independent.


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    OT-363 OT-363 QW-R218-008 transistor Al6 PDF

    Contextual Info: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    RN49A6FS PDF

    RN4993FS

    Contextual Info: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


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    RN4993FS RN4993FS PDF

    2N5004

    Abstract: 2N5005 2N5005J 2N5005JV 2N5005JX
    Contextual Info: 2N5005 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5004 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    2N5005 2N5004 MIL-PRF-19500 2N5005J) 2N5005JX) 2N5005JV) MIL-STD-750 MIL-PRF-19500/535 2N5004 2N5005 2N5005J 2N5005JV 2N5005JX PDF

    2N6989

    Abstract: 2N6987 2N6987J 2N6987JS 2N6987JV 2N6987JX pnp 8 transistor array
    Contextual Info: 2N6987 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N6989 • General purpose switching • 4 Transistor Array • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    2N6987 2N6989 MIL-PRF-19500 2N6987J) 2N6987JX) 2N6987JV) 2N6987JS) MIL-STD-750 MIL-PRF-19500/558 JANT10 2N6989 2N6987 2N6987J 2N6987JS 2N6987JV 2N6987JX pnp 8 transistor array PDF

    2N6193

    Abstract: JANTX 2n6193 2N6193J 2N6193JV 2N6193JX
    Contextual Info: 2N6193 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N6193J


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    2N6193 MIL-PRF-19500 2N6193J) 2N6193JX) 2N6193JV) MIL-STD-750 MIL-PRF-19500/561 2N6193 JANTX 2n6193 2N6193J 2N6193JV 2N6193JX PDF

    2SB772S-T92-B

    Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
    Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


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    2SB772S 2SB772S 2SD882S 2SB772SL 2SB772S-T92-B 2SB772SL-T92-B 2SB772S-T92-K 2SB772SL-T92-K QW-R201-023 2SD882S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023 PDF

    NPN 200 VOLTS POWER TRANSISTOR

    Abstract: NPN 300 VOLTS POWER TRANSISTOR 2N918UB TRANSISTOR DATA 2N918UBJ chip die npn transistor
    Contextual Info: 2N918UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918UBJ


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    2N918UB MIL-PRF-19500 2N918UBJ) 2N918UBJX) 2N918UBJV) MIL-STD-750 MIL-PRF-19500/301 NPN 200 VOLTS POWER TRANSISTOR NPN 300 VOLTS POWER TRANSISTOR 2N918UB TRANSISTOR DATA 2N918UBJ chip die npn transistor PDF

    C11531E

    Contextual Info: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA


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    C11531E) C11531E PDF