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    TRANSISTOR SMD MARKING CODE 3X Search Results

    TRANSISTOR SMD MARKING CODE 3X Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    5962-8672601EA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F151/B2A
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) PDF Buy

    TRANSISTOR SMD MARKING CODE 3X Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR SMD MARKING CODES

    Abstract: PBSS2540E PBSS3540E SC-75 SMD mosfet MARKING code T
    Contextual Info: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 01 — 3 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.


    Original     		PBSS3540E OT416 SC-75) PBSS2540E. TRANSISTOR SMD MARKING CODES PBSS2540E PBSS3540E SC-75 SMD mosfet MARKING code T PDF

    SMD TRANSISTOR MARKING w7

    Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9115T O-236AB) PBHV8115T. AEC-Q101 PBHV9115T 771-PBHV9115T215 SMD TRANSISTOR MARKING w7 PDF

    PBSS8110X

    Abstract: PBSS9110X
    Contextual Info: PBSS8110X 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.


    Original     		PBSS8110X SC-62/ O-243) PBSS9110X. PBSS8110X PBSS9110X PDF

    TRANSISTOR SMD CODE PACKAGE SOT89 4

    Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:


    Original     		PBSS5240X PBSS4240X. TRANSISTOR SMD CODE PACKAGE SOT89 4 PDF

    smd transistor g28

    Abstract: transistor SMD g28
    Contextual Info: ACPM-5008-TR1 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output


    Original     		ACPM-5008-TR1 880-915MHz) ACPM-5008-TR1 10-pin 50ohm AV02-2480EN smd transistor g28 transistor SMD g28 PDF

    SMD Transistor g24

    Contextual Info: ACPM-5002-TR1 Multimode PA - UMTS Band2 and CDMA PCS 1850-1910MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 and CDMA PCS band.


    Original     		ACPM-5002-TR1 1850-1910MHz) ACPM-5002-TR1 10-pin 50ohm AV02-2477EN SMD Transistor g24 PDF

    BSS138PW

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
    Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using


    Original     		BSS138PW OT323 SC-70) AEC-Q101 771-BSS138PW115 BSS138PW TRANSISTOR SMD CODE PACKAGE SOT323 PDF

    NCP623

    Abstract: marking code y2 SMD Transistor MARKING SMD PNP TRANSISTOR Y2 TRANSISTOR SMD MARKING CODE y2 TRANSISTOR SMD MARKING CODE mf smd transistor marking y2 transistor smd Y2 y1 TRANSISTOR SMD MARKING CODE marking codes LXX 05 NCP623DM
    Contextual Info: NCP623 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control The NCP623 low dropout linear regulator can deliver up to 150 mA of output current with a typical dropout voltage of 180 mV. This low dropout feature helps to maintain a regulated output voltage for a


    Original     		NCP623 NCP623/D NCP623 marking code y2 SMD Transistor MARKING SMD PNP TRANSISTOR Y2 TRANSISTOR SMD MARKING CODE y2 TRANSISTOR SMD MARKING CODE mf smd transistor marking y2 transistor smd Y2 y1 TRANSISTOR SMD MARKING CODE marking codes LXX 05 NCP623DM PDF

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Contextual Info: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    2N7002BK

    Abstract: 771-2N7002BK215 trench relay
    Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		2N7002BK O-236AB) AEC-Q101 771-2N7002BK215 2N7002BK trench relay PDF

    2N7002PT

    Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		2N7002PT OT416 SC-75) AEC-Q101 771-2N7002PT-115 2N7002PT PDF

    TRANSISTOR SMD MARKING CODE AOL

    Abstract: 431 SMD SOT-23 CODE MARKING RAD smd sot-23 marking TRANSISTOR SMD MARKING CODE 1P transistor G1 SOT-23 smd code marking 56 sot23-6 sot23-5l marking code TS SMD MARKING CODE AAY
    Contextual Info: MCP621/1S/2/3/4/5/9 20 MHz, 2.5 mA Op Amps with mCal Features Description • • • • • • • • • The Microchip Technology, Inc. MCP621/1S/2/3/4/5/9 family of operational amplifiers features low offset. At power-up, these op amps are self-calibrated using


    Original     		MCP621/1S/2/3/4/5/9 MCP621/1S/2/3/4/5/9 re78-366 DS22188C-page TRANSISTOR SMD MARKING CODE AOL 431 SMD SOT-23 CODE MARKING RAD smd sot-23 marking TRANSISTOR SMD MARKING CODE 1P transistor G1 SOT-23 smd code marking 56 sot23-6 sot23-5l marking code TS SMD MARKING CODE AAY PDF

    ST ARM CORE 1825 0255

    Abstract: 55132-2 REV H
    Contextual Info: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating


    Original     		PDF