TRANSISTOR SMD MARKING CODE 2.X 6 Search Results

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

SMD transistor code NC

Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
Contextual Info: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance

Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES • Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA A 1 6 B C 2 5 C • High isolation voltage, 5300 VRMS 4 E • Compliant to RoHS Directive 2002/95/EC and in

marking code B2 SMD ic

Abstract: RENESAS marking code making code for transistor RENESAS marking code package smd TRANSISTOR code marking 013 smd code marking for japanese smd TRANSISTOR code marking e1 TRANSISTOR SMD MARKING CODE UA PXSF0006LA-A TRANSISTOR SMD MARKING CODE X D
Contextual Info: HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 Previous ADE-208-1449(Z Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent

DC93134

Abstract: 6n136 6n135 TRANSISTOR SMD MARKING CODE PK 01 TRANSISTOR SMD MARKING CODE p1 6 pin TRANSISTOR SMD CODE p smd TRANSISTOR code marking pk TRANSISTOR SMD MARKING CODE UA 6N13X 6n136 smd
Contextual Info: 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 6N135 6N136 ICPL4502 Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C

TRANSISTOR SMD MARKING CODE a9

Abstract: TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code
Contextual Info: Philips Components BFG33 BFG33X NPN 12 GHz WIDEBAND TRANSISTOR BFG33 is an npn transistor in a m icrom iniature SOT143 envelope w ith double em itter bonding. The device contains a BFQ33 crystal and is fo r use in circuits using SMD technology. Features • Extremely high transition frequency

smd transistor 2xX

Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

KTY 110

Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

Contextual Info: 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 6N135 6N136 EL450X series Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C

Contextual Info: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

SmD TRANSISTOR a75

Contextual Info: PBSS5580PA 80 V, 4 A PNP low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

smd code A9 3 pin transistor

Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS4560PA 60 V, 6 A NPN low VCEsat BISS transistor Rev. 1 — 19 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

NXP SMD TRANSISTOR MARKING CODE

Contextual Info: PBSS5560PA 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

NXP SMD TRANSISTOR MARKING CODE

Abstract: PBSS5580PA smd transistor marking af
Contextual Info: PBSS5580PA 80 V, 4 A PNP low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Contextual Info: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A

Contextual Info: PBSS4630PA 30 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with