TRANSISTOR SL 100 Search Results

BLV91

Abstract: ferroxcube 1988 mda406 MDA401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in

122d transistor

Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

MDA380

Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile

SL-60101

Contextual Info: Preliminary Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Preliminary Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

3010 MOS

Abstract: j177 equivalent transistor
Contextual Info: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

SL1010

Abstract: SL-1010 J181 SL-10101 SL-10102
Contextual Info: Advance Data Sheet Product Description SL-1010 The SL-1010 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

SL-8010

Abstract: SLD-80101 SLD-80102
Contextual Info: Advance Data Sheet Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

n-channel dual 3010

Abstract: CISS 3010 SL-30101 SL-3010 SL-30102 SL3010 j177 equivalent transistor
Contextual Info: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

J027

Contextual Info: Advance Data Sheet Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

SL-60101

Abstract: SL-60102
Contextual Info: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

SPP70N05L

Abstract: Q67040-S4000-A2 sl diode
Contextual Info: BUZ 100 SL Preliminary data SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 SL

Contextual Info: Preliminary Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

s 452-2

Contextual Info: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

J464

Abstract: SL-5020 j196 Transistor J182
Contextual Info: Advance Data Sheet Product Description SL-5020 The SL-5020 is Stanford Microdevices’ high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in

j142

Contextual Info: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

s 452-2

Abstract: J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222
Contextual Info: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

J205

Abstract: SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524
Contextual Info: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-2522 The SL-2522 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

j497

Contextual Info: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

POWER 28V 3A 60W

Abstract: SL-6020 SL-60201 SL-60202 J351
Contextual Info: Advance Data Sheet Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power