TRANSISTOR SEM 2006 Search Results

2SC3465

Abstract: TRANSISTOR Outlines DDD4443 OCQ4444
Contextual Info: sanyo Sem icon ducto r 12E D I corp TTTPDTfc. 000444c! U | T -s¿-/ár 2SC3465 NPN Triple Diffused Planar Silicon Transistor 2017 Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed t^>: 0.1us typ.

L1606

Abstract: a 1201 sanyo 2SD1837
Contextual Info: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 2SD1837 T-33-2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features

1s126a

Abstract: 2SD1837 1S126
Contextual Info: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 T-33- 2SD1837 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features

2SC2210

Abstract: 374F
Contextual Info: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.

Contextual Info: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.

2052A

Abstract: SILICON TRANSISTOR FS 2025
Contextual Info: SANYO SEM ICONDUCTO R IS E CORP D 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C

Contextual Info: D • SbMEEm MA42140 Series Description □ □ □ 1 4 4 fl m/a-com T H MIC \ Silicon Low Noise Bipolar Transistor t 31-17 sem icondtBrlngton - Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Ip Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63

2005A

Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Contextual Info: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features

SS9014

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage

transistor SS9015

Contextual Info: SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

ATI Research

Abstract: MIL-STD-750b
Contextual Info: Reliability of semiconducto in a sta b ilized condition. T he ab ility of p ro d u c­ tion p ro cesses is confirm ed and p rio rity item s a re estab lish ed to rea lize ideal pro cess control, th u s p av in g th e w ay fo r su b se q u en t m ass p ro ­

ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

Contextual Info: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have

ATA6026

Abstract: ATA6026-PHQW JESD78 QFN32
Contextual Info: Features • PWM and Direction-controlled Driving of Four Externally Powered NMOS Transistors • Internal Charge Pump Provides Gate Voltages for High-side Drivers in Permanent ON Mode and Supplies the Gate of the External Battery Reverse Protection NMOS • 5V Regulator With External Power Device NPN and Current Limitation Function

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol

Contextual Info: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has

Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320

Contextual Info: Ordering number :EN 2420B _._ 2SB1131 NO.2420B PN P Epitaxial Planar Silicon Transistor SA\YO Strobe, High-Current Switching _ Applications Applications . Strobes, power supplies, relay drivers, lamp drivers Features . . . .

2SD1981

Abstract: Sicc 4227ta
Contextual Info: Ordering number : EN 2 5 3 4 No.2534 SANYO _ 2SD1981 NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection on-chip bias resistance, damper diode

IR 2353

Abstract: 2SD1854
Contextual Info: Ordering number: EN 2353 ‘ 2SD1854 No.2353 SANYO- N P N Epitaxial Planar Silicon Darlington Transistor i Driver Applications Applications Motor drivers, hammer drivers, relay drivers Features . High DC current gain . Darlington connection Absolute Maximum Ratings at Ta=25°C

2005A

Abstract: 2SC4002
Contextual Info: Ordering num ber: EN 2 9 6 0 r. 2SC4002 No.2960 S AïYOi NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F e a tu re s . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A b so lu te M axim um R atin g s at Ta = 25°C

Contextual Info: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced

Contextual Info: Ordering number: EN 1857B 2SA 1438 N 0.1857B I PN P Epitaxial P lanar Silicon Transistor SA I YO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process

2SA1802

Abstract: 2SC4681
Contextual Info: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • Excellent hEE Linearity : hFE l = 200-600 (Vce = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = - 3 A)

2SC3779

Abstract: U40j 2SC3779 transistor
Contextual Info: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).