TRANSISTOR SCHOTTKY MODEL SPICE Search Results

schottky DIODE MOTOROLA B14

Abstract: schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver
Contextual Info: MOTOROLA Order this document by AN1631/D SEMICONDUCTOR APPLICATION NOTE AN1631 Using PSPICE to Analyze Performance of Power MOSFETs in Step-Down, Switching Regulators Employing Synchronous Rectification Prepared by: Rick Honda and Scott Deuty Motorola, Inc.

kf 203 transistor

Abstract: 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver
Contextual Info: AN1631/D Using PSPICE to Analyze Performance of Power MOSFETs in Step−Down, Switching Regulators Employing Synchronous Rectification http://onsemi.com APPLICATION NOTE Prepared by: Rick Honda and Scott Deuty INTRODUCTION This paper will describe an easy method to analyze

transistor schottky model spice

Contextual Info: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5

CPH5705

Abstract: transistor BF 235
Contextual Info: CPH5705 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 512.6 f IS 390.0 BF 0.994 NF VAF 13.0 IKF 1.086 10.8 f ISE 2.499 NE 5.00 BR 1.00 NR 20.8 VAR 100.9 m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value

transistor M-226

Abstract: CPH6701
Contextual Info: CPH6701 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 520 f IS 420.0 BF 0.99 NF 7.5 VAF 1 IKF 13.4 f ISE 1.9 NE 100.40 BR 1.00 NR 5 VAR 273.9m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 651 f 1.10

CPH6702

Abstract: transistor BF 235
Contextual Info: CPH6702 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 166.7f IS 270.0 BF 1.01 NF 8.9 VAF 176.9 IKF 1.0 f ISE 2.35 NE 117.20 BR 1.00 NR 30.8 VAR 150 IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 0.80f

nmos transistor 0.35 um

Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
Contextual Info: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power

transistor schottky model spice

Abstract: SPICE thyristor model 7 segment SPICE Device Model
Contextual Info: V T ID E C IN C 3 D 11386151 O M lfllD VJ900 ANALOG MASTER CHIP FAMILY T .i/2 -2 1 USER'S G UIDE Release 2.0 CONTENTS 1. INTRO DUC TIO N 1.1 Preface. 3-5 1.2 Bipolar-CMOS Comparison. 3-5

M0607

Abstract: transistor schottky model spice
Contextual Info: DMT9FK01 Reference Spice Parameter Total pages page 1 1 Device symbol 4 5 Product name: DMT9FK01 Product type: Transistor with Built-in Resistor PNP + Schottky Barrier Diode C B Tr E R1 R2 1 2 3 Parameters *$ .SUBCKT DMT9FK01 1 2 3 4 5 D1 1 5 SBD R_R1 2 IN 47k

BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS

Abstract: tesec manual microsemi 1-E 380 igbt thermal characterization and simulation using ansys water cooled Chiller AN569 "silicon image" dvi handheld schottky transistor spice BR1487 Motorola transistor schottky model spice
Contextual Info: Thermal Modeling and Management of Discrete Surface Mount Packages Yes, you do have the right materials! Thank you for ordering ON Semiconductor product information. This data book, while it has the ON Semiconductor cover, still references Motorola throughout its contents. As we transition away from our old identity as the Motorola

AN569 in Motorola Power Applications

Abstract: motorola mosfet BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS MTP15N06V equivalent dpak DIODE ANODE COMMON motorola ir 722c motorola Power Applications Manual mtv32 DV240 AN1083
Contextual Info: Thermal Compendium Table of Contents Abstracts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Basic Semiconductor Thermal Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

0.6 um cmos process

Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

transistor schottky model spice

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

spice model Tunnel diode

Abstract: dpsN TUNNEL DIODE spice model
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

schematic diagram 48 volt UPS

Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice
Contextual Info: MfiE D E C I SEMICONDUCTOR • ECi 3QSfl7ti7 Q D O D D b S 073 * E C I S 7 ^ i - 3 FEATURES • All devices use an advanced, small geom etry process resulting in sm aller chip size, increased complexity, and higher frequency (ft 800MHz . All devices operate from 1 to 20 volts despite th eir sm aller size.

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch