TRANSISTOR S9018 G Search Results

transistor s9018

Abstract: S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92
Contextual Info: S9018 S9018 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

transistor SOT23 J8

Abstract: transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23

S9018

Abstract: S9018 transistor IB-015 transistor S9018 h-97
Contextual Info: S9018 PNP EPITAXIAL SILICON TRANSISTOR High Frequency Low Noise Amplifier Application TO-92 Collector Current Ic=-50mA Collector Power Dissipation Pc=400mW High Current Gain Bandwidth Product fT=1,100MHz Typ (Ta=25oC) ABSOLUTE MAXIMUM RATINGS Characteristic

g21 Transistor

Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
Contextual Info: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

S9018

Abstract: S9018 TO92
Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID . S9018 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation: Pc=400mW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25

S9018 transistor

Abstract: S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8

Contextual Info: S9018 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT =l 100MHz * High Total Power D issipation: Pc=400mW

s9018 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES z High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

S9018

Abstract: S9018 transistor transistor S9018 S9018 J8 transistor SOT23 J8
Contextual Info: S9018 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500

S9018 transistor

Abstract: S9018 transistor S9018 S9018* transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 3. COLLECTOR

S9018 SOT-23

Abstract: s9018
Contextual Info: S9018 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) — MARKING：J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor S9018

Abstract: S9018 S9018 transistor S9018 to-92
Contextual Info: S9018 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-92 Power dissipation o P CM :0.31 W (Tamb=25 C) Collector current I CM :0.05 A Collector-base voltage V (BR)CBO :25 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

S9018 transistor

Abstract: S9018 S9018* transistor S9018 TO92
Contextual Info: M C C TO-92 Plastic-EncapsuSate Transistors S9018 TRANSISTOR NPN FEATURES P cm; 0.31W (Tamb=25°C) Icm: 0.05 A V|8R)CB0: 25 V ► Junction tem perature range T j.T s tg : ELECTRICAL -5 5 “C to + 150°C CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e

S9018H

Abstract: S9018 transistor transistor S9018 S9018 S9018G
Contextual Info: MCC S9018 S9018-G S9018-H S9018-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.

S9018H

Abstract: S9018G
Contextual Info: MCC S9018 S9018-G S9018-H S9018-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.

S9018H

Abstract: transistor s9018h transistor S9018
Contextual Info: MCC S9018 S9018-G S9018-H S9018-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.

S9018

Abstract: transistor S9018
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A

S9018W

Abstract: s9018 transistor S9018 transistor SOT J8 S9018 transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018W Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-323

transistor S9018

Abstract: s9018
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A

transistor S9018

Abstract: S9018 S9018 to-92 S9018 transistor S9018 TO92
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.

S9018 transistor

Abstract: S9018 transistor S9018 DATASHEET Transistor BC107 S9018 datasheet
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V