TRANSISTOR RF C1213 Search Results

TRANSISTOR RF C1213 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BLA1011-300		Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B		Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B		Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
93425ADM/B		Rochester Electronics LLC	93425 - 1K X 1 TTL SRAM	PDF

TRANSISTOR RF C1213 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701 Contextual Info: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface	OCR Scan	20AWG, transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701	PDF
schematic diagram tv sony 21 trinitron Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV	Original	KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112	PDF
atc 17-33 Abstract: atc 1733 860-960MHz Contextual Info: ERICSSON ^ PTF 10036 85 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 960 MHz. It is rated at 85 watts minimum output	OCR Scan		PDF
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet Contextual Info: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 85 watts minimum output	OCR Scan		PDF
CHARACTERISTIC OF TRANSISTOR C1213 Abstract: transistor c1213 c1213 transistor transistor Rf C1213 G200 Contextual Info: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization	Original	1-877-GOLDMOS 1301-PTF CHARACTERISTIC OF TRANSISTOR C1213 transistor c1213 c1213 transistor transistor Rf C1213 G200	PDF
atc 17-33 Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733 Contextual Info: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure	Original	1-877-GOLDMOS 1301-PTF atc 17-33 transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733	PDF
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213 Contextual Info: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 50% efficiency with 13 dB gain. Nitride surface passivation and full	Original	1-877-GOLDMOS 1522-PTF transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213	PDF
S12237-02P Contextual Info: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36	Original		PDF
Transistor C1173 Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161 Contextual Info: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG	Original	inR214 R0402 R0603 3314J Transistor C1173 L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161	PDF
MC789P Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series	OCR Scan	C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P	PDF
SFH-1212 Abstract: SFH-1212A smd transistor p3n sony chemical fuse Power management sony laptop circuit diagram smd schottky diode s4 SOD-123 bq78PL116 r25 transistor NTS4001NT1G bq76PL102 Contextual Info: bq78PL116 SLUSAB8B – OCTOBER 2010 – REVISED FEBRUARY 2011 www.ti.com PowerLAN Master Gateway Battery Management Controller With PowerPump™ Cell Balancing Technology Check for Samples: bq78PL116 FEATURES 1 • 23 • • • • • • • • •	Original	bq78PL116 16-Series-Cell bq76PL102 SFH-1212 SFH-1212A smd transistor p3n sony chemical fuse Power management sony laptop circuit diagram smd schottky diode s4 SOD-123 r25 transistor NTS4001NT1G	PDF
SFH-1212 Abstract: SFH-1212A transistor c1213 SOT R23 pwm e-bike Contextual Info: bq78PL116 www.ti.com SLUSAB8A – OCTOBER 2010 – REVISED OCTOBER 2010 PowerLAN Master Gateway Battery Management Controller With PowerPump™ Cell Balancing Technology Check for Samples: bq78PL116 FEATURES 1 • 23 • • • • • • • • •	Original	bq78PL116 16-Series-Cell bq76PL102 SFH-1212 SFH-1212A transistor c1213 SOT R23 pwm e-bike	PDF
MOSFET 2301 Abstract: cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093 Contextual Info: M C N 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Date 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 Page	Original	LVDS/12/15) C1232 C1230 470pF PR412 PR169 PR168 PC175 PC174 C1309 MOSFET 2301 cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093	PDF
C1211 transistor Abstract: foxconn C1-154 21 E Samsung color tv ICs Circuit Diagram schematics 120R-100MHZ foxconn 241 Foxconn INVERTER BT 342 project Socket AM2 S4 43a DIODE Contextual Info: C NM 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date C B Title of Schematics Page Schematics Page Index Block Diagram Yonah(HOST BUS) 1/2 Yonah(HOST BUS) 2/3 Yonah(Power/Gnd) 3/3 CALISTOGA (HOST) 1/7 CALISTOG (DMI) 2/7 CALIST (GRAPHIC) 3/7	Original	C1232 C1230 470pF PR412 PR169 PR168 PC175 PC174 C1309 PR402 C1211 transistor foxconn C1-154 21 E Samsung color tv ICs Circuit Diagram schematics 120R-100MHZ foxconn 241 Foxconn INVERTER BT 342 project Socket AM2 S4 43a DIODE	PDF