TRANSISTOR R1D Search Results

20224

Contextual Info: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it

Contextual Info: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

TV power transistor

Contextual Info: ERICSSON ^ PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power.

470-860 mhz Power 5 w

Contextual Info: ERICSSON ^ PTB 20091 30 Watts, 470-860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation

transistor R1d

Contextual Info: ERICSSON ^ PTB 20004 50 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for

transistor A 935

Abstract: t 935 NE50
Contextual Info: ERICSSON ^ PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for

IEC-68-2-54

Abstract: transistor rf a 5.8 ghz a 30 watts
Contextual Info: ERICSSON ^ PTB 20146 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP

transistor R1d

Abstract: ericsson 20144
Contextual Info: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20141 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20141 is a class AB, NPIM, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20134 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

lc 945 transistor

Abstract: transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

lc 945 p transistor

Abstract: transistor LC 945 lc 945 transistor
Contextual Info: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for

ERICSSON 20101

Abstract: TV power transistor tic55
Contextual Info: ERICSSON ^ PTB 20101 175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, com m on em itter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation,

725-MHz

Contextual Info: ERICSSON ^ PTB 20020 150 Watts P-Sync, 470-800 MHz UHF TV Power Transistor Description The 20020 is an NPN com m on em itter UHF TV pow er transistor intended for 2 8 -3 2 Vdc class AB operation across the 470 to 800 MHz UHF TV frequency band. It is rated at 150 watts P-sync minimum

Contextual Info: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20003 is a class AB, NPN, com m on em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 W atts minim um output power, it may be used for

Contextual Info: ERICSSON ^ PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, com m on em itter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minim um output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used fo r both CW and PEP

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
Contextual Info: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description T he 20174 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minim um output power, it may be used for both C W and PEP

202279m

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NIPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used for both C W and PEP

1501 ic

Abstract: RF Transistor 1500 MHZ
Contextual Info: ERICSSON ^ PTB 20046 1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor Description T he 20046 is a c la ss A B , N PN , com m on emitter R F power transistor intended for 26 V d c operation from 1465 to 1501 M H z. Rated at 1 watt minimum output power, it m ay be used for both C W and P E P

GROUND BASED RADAR

Abstract: transistor SMD R1D
Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications

Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle

pm2301as

Abstract: PM2301 PM2301AST abstract for overvoltage and overcurrent monitor marking R1d PM2301AHT 1110mA battery charger schematic ST-Ericsson marking information
Contextual Info: 3 A switching mode battery charger PM2301 Data sheet Features • 3 A DC/DC step-down battery charger • High efficiency up to 92%  Operation at 1.6 MHz with a 1 µH coil  Dual paths with 1.5 A integrated power Fieldeffect Transistor FET  Constant Current Constant Voltage (CCCV