TRANSISTOR R 2003 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2sa 940

Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Contextual Info: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are

FF50R12KF2

Abstract: FF50R12
Contextual Info: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

FF 25 R 1200 kf

Contextual Info: FF 150 R 12 KF Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B austein/p e r module 0,055 5C/W C/W DC, pro Zweig / per arm 0,11 C/W RthCK pro B au stein/p e r m odule 0,03 cm pro Zweig /p e r arm 0,06 Transistor Transistor Elektrische Eigenschaften

16 pin diagram of uln 2003

Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
Contextual Info: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington

Contextual Info: FF 100 R 06 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values Ic Therm ische Eigenschaften DC, pro Baustein / R th J C R th C K 600 V 100 A Thermal properties 0 ,1 5 5 0 ,3 1 0 ,0 6

Contextual Info: FZ 400 R 12 KF Therm ische Eigenschaften Therm al properties 0,052 °C/W RthJC DC, pro B a u ste in /p e r module Transistor Transistor Elektrische Eigenschaften Electrical properties RthCK 0,03 pro B a u s te in /p e r module °C/W Maximum rated values 1200

Contextual Info: FZ 300 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Thermal properties 0,062 °C/W Hhüc DC, pro Baustein / per module R, RthCK 0,03 pro Baustein / per module °C/W Maximum rated values V cES le 1200

7SR10

Contextual Info: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm

2N5179

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 4.5 dB @ 200 MHz HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICO N RF HIGH FREQ UENCY TRANSISTOR . . . designed p r im a r ily fo r use in high -g a in , lo w -n o is e a m p lifie r , o s c il­ la to r, and m ix e r a p p lic a tio n s .

I1130

Contextual Info: FZ 300 R 12 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,063 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200 V 300

A7800

Abstract: a 7800
Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module

Contextual Info: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W

L81A

Abstract: 2SC2428
Contextual Info: FUJI TS U M I C R O E L E C T R O N I C S 31E D S 374*17« 001b51b T HFfll r-33'13 FUJITSU - January 1990 Edition 1.1 P R O D U C T PR O FILEZ 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 242 8 is a silicon NPN general purpose, high power switching transistor

Contextual Info: FF 200 R 12 K L Transistor Transistor Therm ische Eigenschaften R thjc Elektrische Eigenschaften Electrical properties V CES M a xim u m rated va lu e s 1200 V 20 0 A RthCK lc Thermal properties DC, pro B a u s te in / p e r m od u le D C, pro B au ste in / p e r m od u le

10J24

Contextual Info: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK V CES lc 1200 V 200

Contextual Info: FF 150 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Ic Therm ische Eigenschaften Thermal properties DC, pro B austein/ per module 0 ,0 9 R th J C DC, pro Zweig / per arm

2SC640

Abstract: transistor 2sc640 2sc640 transistor 2sc640 equivalent transistor 2sa733 TRANSISTOR R 2003 2SA733 2SA733 Y hFE is transistor
Contextual Info: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.

2SC640

Abstract: transistor 2sc640 2sc640 equivalent 2sc640 transistor 2SA733 2SA733 Y
Contextual Info: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.

2SC640

Abstract: transistor 2sc640 2sc640 transistor 2SA733 hFE is transistor
Contextual Info: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.

2SC640

Abstract: 2sc640 equivalent transistor 2sc640 transistor 2sa733 2SA733 hFE is transistor 2sc640 transistor
Contextual Info: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.

Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W

G8051S

Abstract: G8551 G8551S
Contextual Info: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8551S P N P E P I TA X I A L S I L I C O N T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR Description The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio