TRANSISTOR Q3 Search Results

4 npn transistor ic 14pin

Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation

CA3146D

Contextual Info: CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. • Guaranteed Base–Emitter Voltage Matching

Contextual Info: Order this document by MC3346/D MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

4 npn transistor ic 14pin

Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package

Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)

Contextual Info: 2N5886 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N5886 is a Power Transistor for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 I.* ” .1 35 I MAX. MAXIMUM RATINGS lc 1 .1 V ,420 P diss II ,Q3»~ -^J-» .043 f? K* 200 W @ Tc = 25 °C

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

rf transistors amplifier design and matching network

Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic
Contextual Info: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design

Q545

Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

BFW17A

Abstract: bfw17a philips semiconductor
Contextual Info: Philips Semiconductors b b s a 'm Ü Q3 S 1 3 3 T21 AP X Product specification NPN 1 GHz wideband transistor BFW17A N AUER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

70V AC to 48v dc 40 amp converter circuit diagram

Contextual Info: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode

marking CODE 5M pnp

Abstract: LDTA144GWT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA144GWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

LDTA144GET1G

Abstract: SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA144GET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

INTERSIL AN5296

Abstract: C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 CA3086 "an5296 Application of the CA3018"
Contextual Info: CA3086 General Purpose NPN Transistor Array May 2001 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN

MC7812

Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218
Contextual Info: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES

LDTA144GLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA144GLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

Contextual Info: N AflER PHILIPS/DISCRETE bTE D • bbSBTai DOBDfibS 0H3 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

e60 diode

Abstract: D-50 KD324510HB
Contextual Info: ma/EREX KD324510HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 High-Beta Dual Darlington Transistor Module 100 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are

Contextual Info: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and

S100 transistor

Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

an5296

Abstract: CA3086 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3018 CA3086F
Contextual Info: CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN

DCS foxboro

Abstract: transistor 2n2222 Philips Electrolytic Capacitor 2200uf gsm signal amplifier NPN transistor 2n2222 C5 MARKING TRANSISTOR gsm circuit diagram philips Trimmers transistor 2N2222 PHILIPS TRANSISTOR 2n2222 p1
Contextual Info: Application Note Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications AN10229_1 Philips Semiconductors TPAN02_02W97 Philips Semiconductors Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications Application Note