TRANSISTOR PO3 Search Results
TRANSISTOR PO3 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR PO3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor A 564
Abstract: S-AV8 2-13B1A 564 transistor S-AU4
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TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4 | |
Contextual Info: Part Number: Integra IB3134M15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The medium power pulsed radar transistor device part number IB3134M15 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. |
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IB3134M15 IB3134M15 IB3134M15-REV-NC-DS-REV-D | |
Contextual Info: Part Number: Integra IB3135MH45 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor device part number IB3135MH45 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C |
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IB3135MH45 IB3135MH45 IB3135MH45-REV-NC-DS-REV-NC | |
IB3134M25Contextual Info: Part Number: Integra IB3134M25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB3134M25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C |
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IB3134M25 IB3134M25 IB3134M25-REV-NC-DS-REV-NC | |
Contextual Info: Part Number: Integra IB2731MH25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731MH25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C |
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IB2731MH25 IB2731MH25 IB2731MH25-REV-NC-DS-REV-D | |
TB9101FNG
Abstract: h-bridge circuit diagram dumper
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TB9101FNG TB9101FNG h-bridge circuit diagram dumper | |
JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
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Contextual Info: MITSUBISHI RF POWER MODULE M57793 903~905MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm PIN ; P in : RF INPUT VCC1 : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY @VCC3 : 3rd. DC SUPPLY ®P0 : RF O UTPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted |
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M57793 905MHz, | |
Contextual Info: MITSUBISHI RF POWER MODULE M67717 8 7 2 9 0 5 M H z , 3 W , FM FOR M O B ILE RADIO A P P LIC A TIO N DESCRIPTION M 67717 is a th ick film RF po w er m odule sp ecifically OUTLINE DRAWING Dimensions in mm designed fo r 8 7 2 ~ 9 0 5 M H z , 3W F M m obile radios. |
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M67717 | |
Contextual Info: MITSUBISHI RF POWER MODULE M57774 220 DESCRIPTION 2 2 5 M H z , 2 5 W , FM M O B ILE RADIO OUTLINE DRAWING The M57774 is a th ic k film RF power module o f 220 ~ 225MHz, 30W o u tp u t, specifically designed fo r 220 ~ 225MHz, 25W FM m obile radios. FEATURES |
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M57774 M57774 225MHz, | |
TRANSISTOR JC
Abstract: STK400-490 FL 210 transistor
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ENN5247 STK400-490 STK400-490 STK400- STK401- STK400-490] TRANSISTOR JC FL 210 transistor | |
TRANSISTOR JCContextual Info: Ordering number:ENN5247 Thick Film Hybrid IC STK400-490 3ch AF Power Amplifier Split Power Supply (25W + 50W + 25W, THD = 0.4%) Overview Package Dimensions The STK400-490 is an audio power amplifier IC for multichannel speaker applications. It comprises two 25W channels (left and right) and a 50W channel (center) in a single |
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ENN5247 STK400-490 STK400-490 STK400- STK401- TRANSISTOR JC | |
TR4943
Abstract: DIP42S LC66P408 QIP48E R4944A
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ENN3492 LC66P408 LC66P408 LC6640X 42-pin 48-pin TR4943 DIP42S QIP48E R4944A | |
M37470E4-XXXSPContextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 37470E4-XXXSP M 37470E8-XXXSP PROM VER SIO N of M 3 7 4 7 0 M 4 -X X X S P .M 3 7 4 7 0 M 8 -X X X S P DESCRIPTION The M37470E4-XXXSP is a single-chip microcomputer de signed with CMOS silicon gate technology. It is housed in a |
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37470E4-XXXSP 37470E8-XXXSP M37470E4-XXXSP 32-pin M37470M4-XXXSP 12VJoL | |
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358S
Abstract: ic 358s 356a transistor TR4943 transistor p02 Murata CST 11,0
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ENN3122A LC66P308 LC66P308 LC663XX 42-pin 48-pin 358S ic 358s 356a transistor TR4943 transistor p02 Murata CST 11,0 | |
358S
Abstract: ic rom 27128 ic 358s RESONATOR 4MHZ R4944A TR4943 DIP42S LC66P308 QIP48E E408
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ENN3122A LC66P308 LC66P308 LC663XX 42-pin 48-pin 358S ic rom 27128 ic 358s RESONATOR 4MHZ R4944A TR4943 DIP42S QIP48E E408 | |
Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS 7470/7471 Group S IN G LE -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION The 7470/7471 group is a single-chip microcomputer de signed with CMOS silicon gate technology. It is housed in a 32-pin shrink plastic molded DIP. The M37471M2XXXSP/FP is a single-chip microcomputer designed with |
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32-pin M37471M2XXXSP/FP 42-pin 56-pin M37471M2-XXXtial 0024flb2 | |
RA30H3340MContextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H3340M Silicon MOS FET Power Amplifier, 330-400MHz 30W MOBILE RADIO PIN: 1 Pin :RF INPUT 2 V gg :GATE BIAS SUPPLY 3 V dd :DRAIN BIAS SUPPLY 4 Po :RF O U TPUT |
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RA30H3340M 330-400MHz 25deg 50ohm RA30H3340M | |
transistor w2a 40
Abstract: xw4f 4500 microcomputer
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14-bit M34551E8-XXXFP, M34551E8FP PCA7414 transistor w2a 40 xw4f 4500 microcomputer | |
d667 transistor
Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
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CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot | |
tb6630
Abstract: LC66356B DIP42S LC66354B LC66358A LC66358B QIP48E LC6650 3025B kbr-2.0ms
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EN4677 LC66354B, 66356B, 66358B LC66356B LC66358B 42-pin LC66358A LC66000 tb6630 DIP42S LC66354B QIP48E LC6650 3025B kbr-2.0ms | |
M37475M4-XXXSP
Abstract: M37476M4-XXXFP MELPS-740 MELPS 740
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001715b M37475IVS2-XXXSP, i37475IVI4-XXXSP M37475M2-XXXSP 32-pin M37476M2XXXSP/FP 42-pin. 56-pin iW37475IVJ2- IVG37475M M37475M4-XXXSP M37476M4-XXXFP MELPS-740 MELPS 740 | |
transistor po3
Abstract: stereo amplifier
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NJM2076 NJH207GD NJM207BM transistor po3 stereo amplifier | |
t4 358b
Abstract: transistor bl p81 55bB LC66512B LC66562A LC66566A LC66E516 LC66P516 pc710 "Ceramic Filter"
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EN3934B 3934B LC66562A, LC66566A LC66562A LC66566A LC66000 LC66512B, t4 358b transistor bl p81 55bB LC66512B LC66E516 LC66P516 pc710 "Ceramic Filter" |