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    TRANSISTOR PMOS Search Results

    TRANSISTOR PMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR PMOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M63828DP

    Abstract: 16PIN M63828WP 16P4X-A IL500
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


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    M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500 PDF

    M54577P

    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


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    M54577P M54577P PDF

    M54519P

    Abstract: M54519FP IC M54519P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current


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    M54519P/FP 400mA M54519P M54519FP 400mA) IC M54519P PDF

    npn power transistor ic 400ma

    Abstract: M54530FP M54530P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits


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    M54530P/FP 400mA M54530P M54530FP 400mA) npn power transistor ic 400ma PDF

    M54585P

    Abstract: M54585FP common collector npn array 18P4G 20P2N-A npn 8 transistor array
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits


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    M54585P/FP 500mA M54585P M54585FP 500mA) common collector npn array 18P4G 20P2N-A npn 8 transistor array PDF

    M54531FP

    Abstract: M54531P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54531P and M54531FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits


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    M54531P/FP 400mA M54531P M54531FP 400mA) PDF

    M54522P

    Abstract: M54522P equivalent M54522FP 18P4G 20P2N-A npn 8 transistor array common collector npn array
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits


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    M54522P/FP 400mA M54522P M54522FP 400mA) M54522P equivalent 18P4G 20P2N-A npn 8 transistor array common collector npn array PDF

    M63826GP

    Abstract: gP DIODE m63826p M54526FP M54526P M63826FP M63826
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


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    M63826P/FP/GP 500mA M63826P, M63826FP M63826GP 225mil M63826P M54526P M54526FP. gP DIODE M54526FP M63826 PDF

    M54523FP

    Abstract: M63823GP M54523P M63823FP M63823P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


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    M63823P/FP/GP 500mA M63823P, M63823FP M63823GP 225mil M63823P M54523P M54523FP. M54523FP PDF

    M54526P

    Abstract: M54526FP
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits


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    M54526P/FP 500mA M54526P M54526FP 500mA) PDF

    M54585KP

    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


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    M54585KP 500mA M54585KP 500mA) PDF

    M54527P

    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54527P 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54527P is six-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


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    M54527P 150mA M54527P 150mA) PDF

    zener diode 10.5k

    Abstract: DARLINGTON TRANSISTOR ARRAY M54525AGP DIODE 85c
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


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    M54525AGP 500mA M54525AGP 500mA zener diode 10.5k DARLINGTON TRANSISTOR ARRAY DIODE 85c PDF

    M54525AGP

    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


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    M54525AGP 500mA M54525AGP 500mA PDF

    M54564

    Abstract: M54564P circuit fluorescent tube 24v 18P4G 20P2N-A M54564FP TIME BASE GENERATOR 10HZ PNP DARLINGTON ARRAYS pnp 8 transistor array npn 8 transistor array
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


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    M54564P/FP 500mA M54564P M54564FP 500mA) M54564 circuit fluorescent tube 24v 18P4G 20P2N-A TIME BASE GENERATOR 10HZ PNP DARLINGTON ARRAYS pnp 8 transistor array npn 8 transistor array PDF

    M54563P

    Abstract: pnp 8 transistor array ttl pnp darlington array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 transistor array sourcing darlington array 18P4G 20P2N-A M54563FP TIME BASE GENERATOR 10HZ
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.


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    M54563P/FP 500mA M54563FP 500mA) M54563P pnp 8 transistor array ttl pnp darlington array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 transistor array sourcing darlington array 18P4G 20P2N-A TIME BASE GENERATOR 10HZ PDF

    pnp 8 transistor array

    Abstract: M54562P pnp darlington array 18P4G 20P2N-A M54562FP PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


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    M54562P/FP 500mA M54562P M54562FP 500mA) pnp 8 transistor array pnp darlington array 18P4G 20P2N-A PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array PDF

    transistor bf 425

    Abstract: Seven Transistor Array PNP BA12004B pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array BF 194 pin bf 194 pin configuration PNP DARLINGTON SINK DRIVER 500ma seven transistors PNP drivers BA12001B
    Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor


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    BA12001B BA12003B BA12003BF BA12004B BA12001B, BA12003B, transistor bf 425 Seven Transistor Array PNP BA12004B pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array BF 194 pin bf 194 pin configuration PNP DARLINGTON SINK DRIVER 500ma seven transistors PNP drivers PDF

    ULN2003

    Contextual Info: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 - DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output High-Voltage Outputs. ,50 V D OR N PACKAGE (TOP VIEW) 1B[


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    ULN2001ATHRU ULN2004A SLRS027 500-mA ULN2001A ULN2001 ULN2002A, ULN2003A, witN2001ATHRU ULN2003 PDF

    Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V


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    SN75468, SN75469 SLRS023B 500-mA ULN2003A ULN2004A, SN75468 SN75469 ilbl724 DlD10b2 PDF

    LB1213M

    Abstract: en1354
    Contextual Info: Ordering number: EN1354C Monolithic Digital IC LB1213M General-Purpose Transistor Array Package Dimensions Overview The LB1213M is a general-purpose transistor array containing 7 channels. It is especially suited for driving LEDs, lamps, small-sized relays, etc.


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    EN1354C LB1213M LB1213M 035A-MFP16 LB1213M] MFP16 en1354 PDF

    DIP18

    Abstract: LB1741 mm 105k BUT 11 Transistor
    Contextual Info: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.


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    ENN4094 LB1741 LB1741 500mA 18-pin 3007B-DIP18 LB1741] 51min DIP18 mm 105k BUT 11 Transistor PDF

    mcz33937

    Contextual Info: Freescale Semiconductor Advance Information Document Number: 33937 Rev. 6.0, 9/2009 Three Phase Field Effect Transistor Pre-driver 33937 33937A The 33937 and 33937A are Field Effect Transistor FET predrivers designed for three phase motor control and similar


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    3937A 3937A mcz33937 PDF

    d2625

    Abstract: TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 sn75466
    Contextual Info: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- P2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes


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    SN75466 SN75469 SLRS023A- P2625, 500-mA ULN2001A, ULN2002A, ULN2003A, ULN2004A, SN75468, d2625 TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 PDF