TRANSISTOR P75N02LDG Search Results

TRANSISTOR P75N02LDG Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR P75N02LDG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
P75N02LDG Abstract: transistor P75N02LDG Niko Semiconductor p75n02ldg P75N02LD dpak code field effect transistor TO252-DPAK Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P75N02LDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P75N02LDG O-252 P75N02LDG" SEP-02-2004 P75N02LDG transistor P75N02LDG Niko Semiconductor p75n02ldg P75N02LD dpak code field effect transistor TO252-DPAK	PDF
P75N02LDG Abstract: P75N02 Contextual Info: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)	Original	ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG P75N02	PDF
P75N02LDG Contextual Info: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)	Original	ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG	PDF
P75N02LDG Contextual Info: シングル N チャンネル MOSFET ELM32428LA-S •概要 ■特長 ELM32428LA-S は低入力容量低電圧駆動、低・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=75A ・ Rds on < 7mΩ (Vgs=10V) ・ Rds(on) < 10mΩ (Vgs=4.5V)	Original	ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG	PDF
ELM32428LA Contextual Info: 单 N 沟道 MOSFET ELM32428LA-S •概要 ■特点 ELM32428LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=75A ·Rds on < 7mΩ (Vgs=10V) ·Rds(on) < 10mΩ (Vgs=4.5V) ■绝对最大额定值项目	Original	ELM32428LA-S P75N02LDG O-252 Jun-11-2005 ELM32428LA	PDF