TRANSISTOR P105 Search Results

3SK22

Abstract: 3SK222
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm Embossed Type Taping

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD PACKAGE DIMENSIONS FEATURES • The Characteristic of Cross-Modulation is good. CM = 101 dB n TYP. @ f = 470 MHz,

2u55

Abstract: 3SK134B
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES V Gate1 to Source Voltage VG1S ±8 Gate2 to Source Voltage VG2S ±8 ±10 *1 V Gate1 to Drain Voltage

3SK231

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)

2SC254

Abstract: 3SK254
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)

U94 marking

Abstract: 3SK224
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain: G ps • Low Noise Figure NF = 2.0 dB TYP. f = 470 MHz Automatically Mounting:

3SK254

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)

transistor NEC 882 p

Abstract: 3SK255
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Unit: mm (VDS = 3.5 V) V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage VG2S ±8*1 V

U94 marking

Abstract: 3SK22 TD226 3SK224 U94
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise Figure: NF = 1.8 dB TYP. f = 900 MHz • High Power Gain: G ps •

3SK230

Abstract: U1A marking
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB

3SK223

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB

NEC k 1760

Abstract: UAA 146 3SK230 UAA 2001
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB

diode u1G

Abstract: 3SK253
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz

3SK223

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz High Power Gain Gps PACKAGE DIMENSIONS (Unit: mm) = 17.5 dB TYP. (@ = 900 MHz)

3SK252

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) NF1 = 2.0 dB TYP. (f = 470 MHz) 2 GPS = 19.0 dB TYP. (f = 470 MHz)

3SK231

Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz • High Power Gain

3SK242

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : G Ps = 24 dB TYP. f = 200 MHz

P10-58

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 dB // (TYP.) @ f = 470 MHz, G r = -3 0 dB

TRANSISTOR D 2398

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS = 23.0 dB TYP. @ = 900 MHz • High Power Gain G Ps • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)