TRANSISTOR P1 P Search Results

TRANSISTOR P1 P Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF
54F573FM/B	Rochester Electronics LLC	54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL,	PDF

TRANSISTOR P1 P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AT-64023 Abstract: S21E Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 5965-8916E S21E	PDF
136.21 Abstract: AT42010 AT-42010 S21E Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz	Original	AT-42010 AT-42010 AT42010 RN/50 5965-8910E 136.21 S21E	PDF
micro-x 420 Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E Contextual Info: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz	Original	AT-42036 AT-42036 me10/-0 5980-1854E 5988-4735EN micro-x 420 AT-42036-BLK AT-42036-TR1 S21E	PDF
K1132 Abstract: 2SJ166 2SJ186 2SK1132 T100 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING	OCR Scan	2SJ166 2SJ166, K1132 2SJ166 2SJ186 2SK1132 T100	PDF
iso 1207 Abstract: TEA-1035 2SK1596 MEI-1202 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC 1 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1596 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1596 2SK1596 IEI-1209) iso 1207 TEA-1035 MEI-1202	PDF
Contextual Info: Notice; You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION	OCR Scan	uPA1524 1524isN	PDF
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANIMEL POWER MOS FET	OCR Scan	2SK1992/2SK1993 2SK1992/2SK1993	PDF
CD3002 Abstract: 2SK1664 MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	OCR Scan	2SK1664 2SK1664 IEI-1209) CD3002 MEI-1202 TEA-1035	PDF
2SK1990 Abstract: 2SK1991 MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1990/2SK1991 2SK1990/2SK1991 IEI-1209) 2SK1990 2SK1991 MEI-1202 TEA-1035	PDF
2sk1760 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT POWER TRANSISTOR 2SK1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION	OCR Scan	2SK1760 2SK1760 IEI-1209) MEI-1202 TEA-1035	PDF
nec 7912 Abstract: TC-7912 2SK1988 2SK1989 MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1988, 2SK1988 2SK1989 nec 7912 TC-7912 MEI-1202 TEA-1035	PDF
ITT DIODE tv Abstract: 2SK1491 MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1491 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1491 2SK1491 ITT DIODE tv MEI-1202 TEA-1035	PDF
2SK1122 Abstract: TEA-1035 MEI-1202 tf155 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET	OCR Scan	2SK1122 2SK1122 IEI-1209) TEA-1035 MEI-1202 tf155	PDF
2SK1497 Abstract: 2SK1498 MEI-1202 TEA-1035 pw-2n n90 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET N E C .r •a- A- aft* - MOS FIELD EFFECT POWER TRANSISTOR 2SK1497/2SK1498	OCR Scan	2SK1497/2SK1498 2SK1497/2SK1498 IEI-1209) 2SK1497 2SK1498 MEI-1202 TEA-1035 pw-2n n90	PDF

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	OCR Scan	2SK1293 2SK1293	PDF
2SK2234 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS	OCR Scan	2SK2234 2SK2234 MEI-1202 TEA-1035	PDF
2SK1271 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iff— 2SK1271 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1271 2SK1271 MEI-1202 TEA-1035	PDF
2SK1273 Abstract: IEI-1213 MEI-1202 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1273 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm	OCR Scan	2SK1273 2SK1273, 2SK1273 IEI-1213 MEI-1202	PDF
2SK1657 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS U n it: mm	OCR Scan	2SK1657 2SK1657	PDF
T0600TB Abstract: transistor P1 Contextual Info: WESTCODE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0600TB45A T0600TB45A T0600TB transistor P1	PDF
T0500NB25E Contextual Info: WESTCODE An Date:- 5 Sep, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0500NB25E rang562) T0500NB25E	PDF
T0570VB Contextual Info: WESTCODE An Date:- 18 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0570VB25G T0570VB25G T0570VB	PDF
Contextual Info: WESTCODE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0600TB45A T0600TB45A	PDF
c 2328a Abstract: 2SJ206 T500 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device	OCR Scan	2SJ206 2SJ206, c 2328a 2SJ206 T500	PDF

TRANSISTOR P1 P Search Results

TRANSISTOR P1 P Result Highlights (5)

TRANSISTOR P1 P Datasheets Context Search

AT-64023

136.21

micro-x 420

K1132

iso 1207

CD3002

2SK1990

2sk1760

nec 7912

ITT DIODE tv

2SK1122

2SK1497

2SK2234

2SK1271

2SK1273

2SK1657

T0600TB

T0500NB25E

T0570VB

c 2328a