AT-42000
Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz
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AT-42000
AT-42000
RN/50
low noise amplifier ghz
AT-42000-GP4
S21E
42000GP4
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136.21
Abstract: AT42010 AT-42010 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42010
AT-42010
AT42010
RN/50
5965-8910E
136.21
S21E
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PDF
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micro-x 420
Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E
Contextual Info: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz
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AT-42036
AT-42036
me10/-0
5980-1854E
5988-4735EN
micro-x 420
AT-42036-BLK
AT-42036-TR1
S21E
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PDF
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8909E
Abstract: AT-42000 AT-42000-GP4 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz
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AT-42000
AT-42000
RN/50
5965-8909E
8909E
AT-42000-GP4
S21E
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PDF
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AT42070
Abstract: AT-42070 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz
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AT-42070
AT-42070
AT42070
RN/50
5965-8912E
5966-4945E
S21E
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PDF
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2SJ460
Abstract: MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
MEI-1202
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Contextual Info: Date:- 6 May, 2014 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C
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T0900DF65A
T0900DF65A
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PDF
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K1132
Abstract: 2SJ166 2SJ186 2SK1132 T100
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
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2SJ166
2SJ166,
K1132
2SJ166
2SJ186
2SK1132
T100
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PDF
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iso 1207
Abstract: TEA-1035 2SK1596 MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC 1 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1596 SWITCHING N-CHANNEL POWER MOS FET
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2SK1596
2SK1596
IEI-1209)
iso 1207
TEA-1035
MEI-1202
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PDF
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Contextual Info: Notice; You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION
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uPA1524
1524isN
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PDF
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Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANIMEL POWER MOS FET
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2SK1992/2SK1993
2SK1992/2SK1993
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PDF
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CD3002
Abstract: 2SK1664 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK1664
2SK1664
IEI-1209)
CD3002
MEI-1202
TEA-1035
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PDF
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2SK1990
Abstract: 2SK1991 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET
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2SK1990/2SK1991
2SK1990/2SK1991
IEI-1209)
2SK1990
2SK1991
MEI-1202
TEA-1035
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PDF
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2sk1760
Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT POWER TRANSISTOR 2SK1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION
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2SK1760
2SK1760
IEI-1209)
MEI-1202
TEA-1035
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PDF
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75178
Abstract: 2SJ165 2SK1132
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SJ165 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm
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2SJ165
2SJ165,
75178
2SJ165
2SK1132
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PDF
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ITT DIODE tv
Abstract: 2SK1491 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1491 SWITCHING N-CHANNEL POWER MOS FET
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2SK1491
2SK1491
ITT DIODE tv
MEI-1202
TEA-1035
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PDF
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2SK1122
Abstract: TEA-1035 MEI-1202 tf155
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET
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2SK1122
2SK1122
IEI-1209)
TEA-1035
MEI-1202
tf155
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2SK1497
Abstract: 2SK1498 MEI-1202 TEA-1035 pw-2n n90
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET N E C .r •a- A- aft* - MOS FIELD EFFECT POWER TRANSISTOR 2SK1497/2SK1498
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2SK1497/2SK1498
2SK1497/2SK1498
IEI-1209)
2SK1497
2SK1498
MEI-1202
TEA-1035
pw-2n n90
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PDF
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2SJ166
Abstract: 2SK1133 diode ir30
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm
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2SK1133
2SK1133,
2SJ166
2SK1133
diode ir30
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Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK1293
2SK1293
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2SK2234
Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS
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2SK2234
2SK2234
MEI-1202
TEA-1035
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PDF
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2sj196
Abstract: 2SK1482
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm
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2SK1482
2SK1482
2sj196
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PDF
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2SK1271
Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iff— 2SK1271 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r SWITCHING N-CHANNEL POWER MOS FET
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2SK1271
2SK1271
MEI-1202
TEA-1035
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PDF
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2SK1273
Abstract: IEI-1213 MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1273 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm
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2SK1273
2SK1273,
2SK1273
IEI-1213
MEI-1202
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PDF
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