TRANSISTOR P 3 Search Results

transistor 2n

Abstract: 3904
Contextual Info: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor

2N1046

Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Contextual Info: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an

L7E transistor

Contextual Info: •I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ]> y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA

thyristor firing circuits

Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A
Contextual Info: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

marking 557 SOT143

Contextual Info: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor

mcl610

Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

BFQ42

Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
Contextual Info: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is

BF926

Abstract: BF926 philips
Contextual Info: BF926_ — = _ PHILIPS INTERNATIONAL SbE D • T-3M 7 IL- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

CMBT5401

Abstract: 2L TRANSISTOR
Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PACKAGE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 ! 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 o.sr _2 .00_ 1.80 ABSOLUTE MAXIMUM RATINGS

BF926

Abstract: BF926 philips PNP UHF transistor transistor BF926
Contextual Info: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and

differential pair cascode

Abstract: piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array
Contextual Info: D Arrays Transistor-continued Super-Beta Transistor Array Incorporates a Super-Beta Differential Cascode Amplifier Plus 3 Independent n-p-n Transistors CA3095 Applications and Features D ifferen tial Cascode A m p lifie r: T w o super-beta n-p-n transistors —

Contextual Info: • bb53^31 0 02S c17b MMfl H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E » SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope primarily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA

philips bfq23

Abstract: BFQ23 transistor BFR91 AC 128 pnp transistor transistor 9634 993 395 pnp npn BFR91A 1357 PNP TRANSISTOR the pin function of ic 7423
Contextual Info: Product specification Philips Semiconductors -3/-V 7 PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE 711G65h D ^ BFQ23 DQHSHGE 475 « P H I N PINNING P N P transistor in a plastic SOT37 envelope, primarily Intended for use in UH F and microwave amplifiers,

Contextual Info: Philips Semiconductors bb53^31 0031513 TTT H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHIL IPS/DISCRETE DESCRIPTION b*lE D PINNING P N P transistor in a plastic SOT37 envelope, primarily intended for use in UH F and microwave amplifiers,

Contextual Info: Data Sheet µPA2812T1L P-channel MOS FIELD EFFECT TRANSISTOR R07DS0762EJ0100 Rev.1.00 May 31, 2012 Description The µPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

PXT2222

Abstract: PXT2222A
Contextual Info: 7110fl2b 0 0 ^ 3 3 O n H P H IN P X T2222/A 7 V SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar e p ita xia l transistor, housed in a SO T89 envelope. It is intended fo r sw itching and linear applications. The co m p le m e n tary ty p e is P X T 2 9 0 7 /A .

UPA2813T1L

Contextual Info: Data Sheet µPA2813T1L P-channel MOS FIELD EFFECT TRANSISTOR R07DS0763EJ0100 Rev.1.00 May 31, 2012 Description The µPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

BC856BW

Contextual Info: ^ 5 3 ^ 3 1 002447b T4b « A P X Philips Semiconductors PNP general purpose transistor BC856W; BC857W; BC858W N AMER PHILIPS/DISCRETE FEATURES Product specification b?E T> PIN CONFIGURATION • S- mini package. DESCRIPTION E l EL - 1 c P N P transistor in a plastic SOT323

s3331

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

BF660

Abstract: transistor 558
Contextual Info: 7110ö2L> 00bflfe,37 024 B P H IN BF660 J V_ SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with MOS-FETs in thick and thin-film circuits.

BFG96

Abstract: BFG32 MSB037 3H2 philips MBB352
Contextual Info: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in