TRANSISTOR P 3 Search Results

BLW90

Abstract: fi37
Contextual Info: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

04n60c3

Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
Contextual Info: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

Contextual Info: TLP572 GaAs IRED S PHOTO-TRANSISTOR TLP572 P R O G R A M M A B L E C ONTRO LLERS A C /DC - IN P U T M O D U L E SO LID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared em itting

2SD1885

Abstract: TV horizontal Deflection Systems SE 32
Contextual Info: Ordering number: EN2432A 2SD1885 N P N Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection O utput Applications A p p lica tio n s •Color T V horizontal deflection output. •Color display horizontal deflection output. Featu res •High speed tf= 100ns .

s00b

Abstract: PQZ1
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

Contextual Info: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

2n6851

Contextual Info: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET

NC3010

Contextual Info: SMP11P20 CTSiiconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-220AB TOP VIEW PRODUCT SUMMARY V BR DSS (V) r DS(ON) (ÎÎ) (A) •d -200 0.50 -1 1 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

TIS129

Contextual Info: TYPE TIS129 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 2 0 0 7 , J U N E 1 9 7 3 S IL E C T t V HF/U H F TRANSISTOR* DESIGNED FOR COMMON-BASE OSCILLATOR AND AMPLIFIER APPLICATIONS • Low Cce . . . 0.3 pF Max • Specified Ratio if • High fx . . . 800 MHz Min

Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)

2146B

Abstract: PW500 2SC3705 ZENER DIODE 5v CAPACITY
Contextual Info: O rdering num ber: EN 2146B _ 2SC3705 N0.2146B NPN Epitaxial Planar Silicon Darlington Transistor SAXYO i Printer Driver Applications A p p licatio n s • Switching of L load motor drivers, printer drivers, relay drivers . F e a tu re s • High DC current gain.

ALD1105PBL

Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are

2sk851

Abstract: 0070-II
Contextual Info: 2SK851 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E Cr-MOSli INDUSTRIAL A P P L I CATIONS HIGH SPEED, HIGH CURRENT S WITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONV E R T E R A N D MOTOR DRIVE APPLICATIONS. • L o w Dra i n - S o u r c e ON Resistance

2SK1865

Abstract: ld12a diode 9D Bp co2cc 2sk18
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1865 Field Effect Transistor Industrial A p p lica tio n s Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F ea tu res • Low Drain-Source ON Resistance - Rds (ON) = 0-55Q (Typ.)

2SK1719

Abstract: mos relay 719 irl 5a
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Industrial A p p lic a tio n s Unit in m m Silicon N Channel MOS Type l?-;t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive

Contextual Info: TOSHIBA GT80J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N - CHANNEL M O S TYPE G T 8 0 J 1 01 U n it in m m HIGH P O W ER SWITCHING APPLICATIONS. 2 0.5M AX. • H ig h In p u t Im pedance • H ig h Speed ^3-3 ±0.2 t f = 0 .4 0 / / s M ax.

Contextual Info: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)

1SS TRANSISTOR

Contextual Info: TOSHIBA 9 Ó 9 7 2 5 0 TO SHIBA ~hìhi -CDISCRET E / O P T O } =H D IS C R E T E /O P T O 99D D E I lU'lveSQ □□ I b ' m 16991 DT^3-£>5~ TOSHIBA FIELD EFFECT TRANSISTOR ARRAY SEMICONDUCTOR S 3 5 1 3 TECHNICAL DATA S I L I C O N N C H A N N E L M O S T Y P E (4 in 1)

2SK161

Abstract: 2SK161GR vI652
Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

2SK1380

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1380 H I GH S P E E D , H I G H CURRENT SWI TCHING A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS R E L A Y D R I V E , M O T O R D RI VE AND DC-DC C ONV ER T ER A P P L I C A T I O N S .

Contextual Info: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.

ic 4PC

Abstract: 115b1
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.

2SD1395

Contextual Info: Ordering number:EN1221C _2SD1395 N0.I22IC NPN Triple Diffused P lanar Silicon Darlington Transistor. SAMYO. i Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers .