TRANSISTOR P 3 Search Results

BLW90

Abstract: fi37
Contextual Info: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

04n60c3

Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
Contextual Info: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

Contextual Info: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)

Contextual Info: ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting.

NPN planar RF transistor

Abstract: NPN RF Amplifier BFG621 transistor 513 PH* SOT223 transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: O b je c tiv e s p e c ific a tio n P h ilip s S e m ic o n d u c to rs NPN 8 GHz wideband transistor PHILIPS i n t e r n a t i o n a l FEATURES BFG621 SbE ]> 711002b 004S35b 7b5 P IN N IN G PIN D E S C R IP T IO N • Low distortion • Gold m etallization ensures

HJM723M

Abstract: NJM723 NJM723V 723D CRF5 NJM723D
Contextual Info: PRECISION VOLTAGE REGULATOR NJM723 T he NJM723 is a Precision M onolithic Voltage R egulator. T he device consists of a tem perature-com pensated reference am plifier, erro r am plifier, pow er-series pass transistor and current-lim it circuitry. A dditional NPN or PN P pass elem ents

Contextual Info: FS8853-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8853 Fo 300 mA LDO Linear Regulator FS8853 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP

transistor c 933

Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Contextual Info: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System

Contextual Info: FS8853-DS-26_EN OCT 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8853 300 mA LDO Linear Regulator FS8853 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

transistor c2383

Abstract: c2383 transistor C2383 C2383 NPN Transistor PH1214-30EL
Contextual Info: an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features _-.- - - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors

PH1819-10

Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819
Contextual Info: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP

FS8853

Abstract: XXXW
Contextual Info: FS8853 300mA LDO Linear Regulator General Description Ordering Information FS8853-xx x x The FS8853 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Package The high-accuracy output voltage is preset at an

Contextual Info: FS8854 350mA LDO Linear Regulator General Description Ordering Information The FS8854 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +6.5V and delivers 350mA output current. FS8854-xx x x Package A : SOT-23 B : SOT-23

LM33G

Abstract: pin configuration of ic LM339 LM339N comparator pin configuration v1ni lm339 pin diagram lm339n pin diagram lm33G pin diagram ttl AND gate LM139 APPLICATIONS LM339F
Contextual Info: LM139/339 OIMînEÜ^OlL V o lta g e C o m p a ra to rs FEATURES GENERAL DESCRIPTION • Wide single supply voltage range or dual supplies The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as low as 2 mV max for all four comparators. These were

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

Mallory Capacitor

Contextual Info: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

dual transistor marking code 012

Abstract: DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU J-STD-020A marking code vl
Contextual Info: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device SOT-363 A CXX YM Dim Min Max A 0.10 0.30 B 1.15 1.35

ARC-182

Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios

CA3054

Abstract: differential pair cascode CA3054M96 11AGC
Contextual Info: CA3054 Data Sheet September 1998 Dual Independent Differential Amp for Low Power Applications from DC to 120MHz File Number 388.4 Features • Two Differential Amplifiers on a Common Substrate • Independently Accessible Inputs and Outputs The CA3054 consists of two independent differential

CPM1A-MAD01 manual

Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
Contextual Info: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with

UC37131

Abstract: UC37132 UC37133 UC17131
Contextual Info: UC17131/2/3 UC27131/2/3 UC37131/2/3 Smart Power Switch FEATURES DESCRIPTION • 300mA Continuous Output Current The UC37131, UC37132 and UC37133 are a family of smart power switches which can drive resistive or inductive loads from the high side or low side.