TRANSISTOR OF VCE 5V WITH 3A Search Results

AN5296 Application of the CA3018 Integrated

Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
Contextual Info: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000

DFN3020B-8

Abstract: ZXTC4591AMC ZXTC4591AMCTA ZXTC6720MC
Contextual Info: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features and Benefits Mechanical Data NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage 500mV max @ 1A • RSAT = 195mΩ for a low equivalent On-Resistance

Contextual Info: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features and Benefits Mechanical Data NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage 500mV max @ 1A • RSAT = 195mΩ for a low equivalent On-Resistance

TSC5303DCH

Abstract: TSC5303DCP transistor C14
Contextual Info: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

91A PNP

Contextual Info: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage 500mV max @ 1A • RSAT = 195mΩ for a low equivalent On-Resistance

TSC5303D

Abstract: diode b10 250V transistor npn 2a
Contextual Info: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

3a npn to126 transistor

Abstract: 2sd1060l 2SD1060
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR „ 1 SOT-89 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A 1 TO-126 1 TO-92 1 TO-220 1 1 TO-252 TO-251 *Pb-free plating product number: 2SD1060L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR „ 1 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A 1 TO-251 1 „ SOT-89 TO-126 ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR „ FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR  1 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A 1 TO-251 1  TO-126 ORDERING INFORMATION Ordering Number Lead Free

60V transistor npn 2a

Abstract: d 772 transistor NPN 2A TO 126 60V transistor npn ic2a to-126 transistor Transistor TO-126 Transistor to 126
Contextual Info: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 60V BVCEO 30V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Complementary part with TSB772 Part No.

Contextual Info: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● 0.5V @ IC / IB = 2A / 200mA Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A

3A 100V npn LOW SATURATION VOLTAGE

Abstract: TSD2098 TSD2098A
Contextual Info: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics

80V 1A NPN Transistor TO-92

Abstract: transistor b11 TSD2150A NPN Transistor TO92 5V 200mA 0118 transistor 2A 80v complementary transistor 0118 n-p-n
Contextual Info: TSD2150A Low Vcesat NPN Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.)

TIP102

Abstract: TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864

Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

D07 15

Abstract: to-126 transistor TSB772CK TSB772 TSD882
Contextual Info: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882

transistor F13

Abstract: transistor F13 10
Contextual Info: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Ordering Information Features ● ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882

d 772 transistor

Abstract: TSB772 TSD772CK TSD882 772 pnp transistor 200ma pnp
Contextual Info: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -50V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882

Contextual Info: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features   Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5

d 772 transistor

Abstract: transistor 772 "PNP Transistor" TSB772 TSD772CK TSD882 transistor 200ma pnp
Contextual Info: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882