TRANSISTOR OF VALUE VCE 3V Search Results

Contextual Info: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

Transistor hFE CLASSIFICATION Marking CE

Abstract: R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 MMBTSC4226 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF
Contextual Info: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA

n7 transistor

Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

transistor code R24

Abstract: R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24 MMBTSC4226
Contextual Info: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: z Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA z High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

germanium transistors NPN

Abstract: 2sd879 transistor germanium MS 3A
Contextual Info: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

2sd879

Abstract: germanium transistors NPN
Contextual Info: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

Zener diode 10b3

Abstract: 9V 1A Transformer specification DIODE 10B3 D44C3A sr104 diode 10v ZENER DIODE Transformer 9v 1A 470 mf 16v LM3578 9V 2A Transformer specification
Contextual Info: INTRODUCTION Isolated power supplies for I O cards are required to provide multiple outputs typically 9V at 0 mA–120 mA and 5V at 0 mA – 200 mA from a 3 3V input The transformer peak primary currents are generally very high there by eliminating the choice of many popular low-cost integrated circuits The

1nS pulse width circuit

Abstract: MPS2369A High speed switching Transistor
Contextual Info: MPS2369A t1 270Ω 3V MPS2369A ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * Very fast switching tON CIRCUIT +10.6V NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR C B 3K3Ω CS < 4pF * -1.5V < 1ns Pulse width t1 =300ns Duty cycle = 2% tOFF CIRCUIT t1

transistor substitution chart

Abstract: S M R2632 saw resonator r2632 95hs01 saw Colpitts circuit design I-ETS-300-220 siemens R2632 R2632 433.92 Mhz two-port saw resonator RP1303
Contextual Info: AN-1021 Fairchild Application Note 1021 3V RF-Transmitter Utilizing Fairchild’s HiSeC Encoder INTRODUCTION In the recent years short range unlicensed RF links have become very popular for a wide variety of applications in the field of remote control, data exchange, keyless entry systems, and others. The

2SB1227

Abstract: 2SD1829 motor and printer
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1500 Min @ (VCE= -3V, IC= -2.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1829 APPLICATIONS ·Designed for use in control of motor drivers, printer

transistor 2SD1830

Abstract: 2Sd1830 2sd1830 equivalent 2SB1228
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1500 Min @ (VCE= -3V, IC= -4A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1830 APPLICATIONS ·Designed for use in control of motor drivers, printer

2SB1226

Abstract: 2SD1828
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1500 Min @ (VCE= -3V, IC= -1.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1828 APPLICATIONS ·Designed for use in control of motor drivers, printer

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

2SB1568

Contextual Info: , Una. L/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1568 Silicon PNP Darlington Power Transistor 1 DESCRIPTION • Collector-Emitter Breakdown Vbltage: V(BR)CEo= -80V(Min) • High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, lc= -2A)

BDW73C

Abstract: bdw73d BDW73 BDW73A BDW73B BDW74 BDW74A BDW74B BDW74C BDW74D
Contextual Info: BDW73, BDW73A, BDW73B, BDW73C, BDW73D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW74, BDW74A, BDW74B, BDW74C and BDW74D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE

BDW63D

Abstract: BDW63 BDW63A BDW63B BDW63C BDW64 BDW64A BDW64B BDW64C BDW64D
Contextual Info: BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D ● 60 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 2 A TO-220 PACKAGE

BDW83

Abstract: BDW83C BDW83D BDW83A BDW83B BDW84 BDW84A BDW84B BDW84C BDW84D
Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A

bdw73d

Abstract: BDW73 BDW73A BDW73B BDW73C BDW74 BDW74A BDW74B BDW74C BDW74D
Contextual Info: BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE

Contextual Info: BDW73, BDW73A, BDW73B, BDW73C, BDW73D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW74, BDW74A, BDW74B, BDW74C and BDW74D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but

Contextual Info: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A

BDW63

Abstract: BDW63A BDW63B BDW63C BDW63D BDW64 BDW64A BDW64B BDW64C BDW64D
Contextual Info: BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D ● 60 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 2 A TO-220 PACKAGE

BDW54

Abstract: BDW53 BDW53A BDW53B BDW53C BDW53D BDW54A BDW54B BDW54C BDW54D
Contextual Info: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A