TRANSISTOR OC 76 Search Results

TRANSISTOR OC 76 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-2	Rochester Electronics LLC	Avionics LDMOS transistor	PDF
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor	PDF
CA3127MZ	Rochester Electronics LLC	CA3127 - Transistor Array	PDF
RX1214B130YI	Rochester Electronics LLC	NPN microwave power transistor	PDF
MX0912B251Y	Rochester Electronics LLC	NPN microwave power transistor	PDF

TRANSISTOR OC 76 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CD3922 Contextual Info: CD3922 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD3922 is a UHF Communication Power Transistor for Broadband Class A, AB or C Applications. MAXIMUM RATINGS I 15 A V 40 V PDISS 200 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC PACKAGE STYLE JO-2	Original	CD3922 CD3922	PDF
2N1925 Abstract: g500ma Contextual Info: 2N1925 GERMANIUM PNP TRANSISTOR PACKAGE STYLE TO- 5 DESCRIPTION: The 2N1925 is Designed for General Purpose Amplifier and Switching Applications. M A X IM U M R A T IN G S lc 500 mA VcER -40 V pd is s 225 mW @ Ta # 25 OC Tj -65 OC to +100 OC Ts t g -65 OC to +100 OC	OCR Scan	2N1925 g500ma	PDF
2SC2952 Abstract: high frequency transistor S21E Contextual Info: 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-33 DESCRIPTION: The 2SC2952 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC	Original	2SC2952 2SC2952 S21E2 high frequency transistor S21E	PDF
2N2920 Contextual Info: 2N2920 SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 3O mA O m Ie < MAXIMUM RATINGS 6O V Pdiss SOO mW @ Ta ' (S OC Pdiss 1SOO mW @ T c ' (S OC	OCR Scan	2N2920	PDF
2N3553 Contextual Info: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g	OCR Scan	2N3553	PDF
TPV5051-1 Contextual Info: TPV5051-1 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE BMA 2A DESCRIPTION: The TPV5051-1 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. MAXIMUM RATINGS IC 2.6 A EACH SIDE VCE 25 V PDISS 65 W @ TC = 25 OC (TOTAL) TJ -65 OC to +200 OC	Original	TPV5051-1 TPV5051-1 2X100	PDF
ASI10725 Abstract: VHB25-28S Contextual Info: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB25-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D 4.0 A VCBO 65 V F E 35 V 4.0 V PDISS 40 W @ TC = 25 OC TJ -65 OC to +200 OC	Original	VHB25-28S VHB25-28S 112x45° ASI10725 ASI10725	PDF
ASI10567 Abstract: AVD400 Contextual Info: AVD400 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A A 4x .062 x 45° DESCRIPTION: 2xB The ASI AVD400 is Designed for C F E D G FEATURES: I • • • Omnigold Metalization System N O -65 C to +250 C TSTG -65 OC to +200 OC θ JC 0.12 OC/W	Original	AVD400 AVD400 ASI10567 ASI10567	PDF
ASI10680 Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: A 45° • • • Omnigold Metalization System B J IC 2.0 A VCBO 36 V VCER 18 V G H K 37 W @ TC = 25 OC O TJ -65 C to +200 C TSTG -65 OC to +150 OC	Original	ASI10680 ASI10680	PDF
ASI10555 Abstract: AVD004P Contextual Info: AVD004P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A DESCRIPTION: A .100x45° The ASI AVD004P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D MAXIMUM RATINGS E IC 650 mA PEAK VCB 32 V PDISS 18 W PEAK -65 OC to +200 OC	Original	AVD004P 100x45° AVD004P ASI10555 ASI10555	PDF
ASI10563 Abstract: AVD090P Contextual Info: AVD090P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A A DESCRIPTION: .100x45° The ASI AVD090P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D E MAXIMUM RATINGS 6.5 A PEAK IC 55 V VCB PDISS 250 W PEAK -65 OC to +200 OC	Original	AVD090P 100x45° AVD090P ASI10563 ASI10563	PDF
ASI10557 Abstract: AVD015P Contextual Info: AVD015P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A DESCRIPTION: A .100x45° The ASI AVD015P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D MAXIMUM RATINGS E IC 1.25 A PEAK VCB 50 V PDISS 50 W PEAK -65 OC to +200 OC	Original	AVD015P 100x45° AVD015P ASI10557 1150MHz ASI10557	PDF
ASI10630 Abstract: MLN2027F Contextual Info: MLN2027F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI MLN2027F is Designed for B .060 x 45° CHAMFER C E FEATURES: G • • • Omnigold Metalization System L 300 mA VCE 20 V PDISS - W O TSTG -65 OC to +200 OC	Original	MLN2027F MLN2027F ASI10630 ASI10630	PDF
ASI10636 Contextual Info: OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: A The ASI OSC-0.3C is Designed for B FEATURES: • • • Omnigold Metalization System C F E D MAXIMUM RATINGS IC 225 mA VCB 25 V O 5.0 W @ TC = 25 C PDISS TJ -65 OC to +200 OC	Original	ASI10636 ASI10636	PDF

DB30A Abstract: ASI10639 Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI OSC-2.0SM is Designed for B .060 x 45° CHAMFER C E G FEATURES: L • • • Omnigold Metalization System 700 mA VCC 30 V PDISS 17.6 W @ TC ≤ 50 C TJ -65 OC to +200 OC	Original	ASI10639 DB30A ASI10639	PDF
5B TRANSISTOR Abstract: ASI10642 Contextual Info: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC	Original	8-32UNC ASI10642 5B TRANSISTOR ASI10642	PDF
high frequency transistor Abstract: TP2314A Contextual Info: TP2314A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 CE DESCRIPTION: The TP2314A is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications,With Emitter Grounded to Case. MAXIMUM RATINGS I 400 mA V 16 V PDISS 5.0 W @ TC = 25 OC	Original	TP2314A TP2314A high frequency transistor	PDF
TP2314 Abstract: ic tp2314 high frequency transistor Contextual Info: TP2314 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 CE DESCRIPTION: The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case. MAXIMUM RATINGS I 1.0 A V 18 V PDISS 8.0 W @ TC = 25 OC	Original	TP2314 TP2314 ic tp2314 high frequency transistor	PDF
2N2920A Contextual Info: 2N2920A SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920A is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-78 3O mA 6O V O m Ie < MAXIMUM RATINGS Pd i s s SOO mW @ Ta ' (S OC Pd i s s	OCR Scan	2N2920A	PDF
transistor oc 76 Abstract: 7812R 7812 Contextual Info: ST 7812R 3-terminal 1A positive voltage regulator Features • Output Current up to 1A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	7812R O-252 transistor oc 76 7812R 7812	PDF
YTF830 Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600 Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH YTF830 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-OC CONVERTER AND HOTOR Unit in mn DRIVE APPLICATIONS. 10.3MAX. ¿ 3 .6 * 0 . 2 -ë -f FEATURES:	OCR Scan	YTF830 00A/m YTF830 Field Effect Transistor Silicon N Channel MOS vdss 600	PDF
7812 Abstract: TRANSISTOR 7812 7812 voltage regulator 7812 MAX INPUT VOLTAGE ma 7812 7812 1A ci 7812 regulator 7812 7812 regulator voltage regulator 7812 datasheet Contextual Info: ST 7812 3-terminal 1A positive voltage regulator Features • Output Current up to 1A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC	Original	O-220 7812 TRANSISTOR 7812 7812 voltage regulator 7812 MAX INPUT VOLTAGE ma 7812 7812 1A ci 7812 regulator 7812 7812 regulator voltage regulator 7812 datasheet	PDF
transistor oc 76 Abstract: 7812R Contextual Info: ST 7812R 3-terminal 1 A positive voltage regulator Features • Output Current up to 1 A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	7812R O-252 transistor oc 76 7812R	PDF
7812R Abstract: transistor oc 76 Contextual Info: ST 7812R 3-terminal 1 A positive voltage regulator Features • Output Current up to 1 A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	7812R 12emperature, O-252 7812R transistor oc 76	PDF

TRANSISTOR OC 76 Search Results

TRANSISTOR OC 76 Result Highlights (5)

TRANSISTOR OC 76 Datasheets Context Search

CD3922

2N1925

2SC2952

2N2920

2N3553

TPV5051-1

ASI10725

ASI10567

ASI10680

ASI10555

ASI10563

ASI10557

ASI10630

ASI10636

DB30A

5B TRANSISTOR

high frequency transistor

TP2314

2N2920A

transistor oc 76

YTF830

7812

transistor oc 76

7812R