TRANSISTOR N1 SMD CODE Search Results
TRANSISTOR N1 SMD CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 5446/BEA |
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5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA |
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54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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TRANSISTOR N1 SMD CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS. |
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bc847qasdfn1010b-6ot1216bc857qas+2 | |
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Contextual Info: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS. |
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bc857qasdfn1010b-6ot1216bc847qas+2 | |
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Contextual Info: DF N1 10B -6 BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 19 July 2013 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits |
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bc847qapndfn1010b-6ot1216aec-q101 | |
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Contextual Info: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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pbss5260qadfn1010d-3ot1215pbss4260qa+1 | |
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Contextual Info: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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pbss5230qadfn1010d-3ot1215pbss4230qa+1 | |
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Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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pbss4260qadfn1010d-3ot1215pbss5260qa+1 | |
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Contextual Info: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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pbss4230qadfn1010d-3ot1215pbss5230qa+1 | |
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Contextual Info: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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pbss5130qadfn1010d-3ot1215pbss4130qa+1 | |
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Contextual Info: DF N1 01 0D -3 PBSS4160QA 60 V, 1 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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pbss4160qadfn1010d-3ot1215pbss5160qa+1 | |
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Contextual Info: DF N1 01 0D -3 PBSS5160QA 60 V, 1 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
Original |
pbss5160qadfn1010d-3ot1215pbss4160qa+1 | |
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Contextual Info: DF N1 01 0D -3 PBSS4130QA 30 V, 1 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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pbss4130qadfn1010d-3ot1215pbss5130qa+1 | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb65upedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb56endfn1010d-3ot1215 | |
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Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic |
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pmcxb900uedfn1010b-6ot1216 | |
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Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb120epedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb40unedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb40unedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb75upedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb75upedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb65enedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
pmxb75upedfn1010d-3ot1215 | |
NXP date code marking
Abstract: a/NXP date code marking
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pmxb65upedfn1010d-3ot1215nxp date code marking+1 | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
pmxb65upedfn1010d-3ot1215 | |
NXP date code markingContextual Info: DF N1 01 0D -3 PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb43unedfn1010d-3ot1215nxp date code marking | |