TRANSISTOR MU 813 Search Results

transistor CD 910

Abstract: transistor 1317 TIP110A
Contextual Info: ISemiconductor TIP110A PN P Epitaxial Silicon Transistor MEDI UM P OWE R LI NEAR S WI TCHI NG APPLI CATI ONS • Collector current 10A • Collector dissipation Pc =75W Tc = 25 “c [ ABSOLUTE MA X I MU M RATI NGS ITa = 2 5 *C> I Symbol Rating Unit VcBO

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

2SC5289

Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

ic sc 4145

Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
Contextual Info: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

nec 3012

Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

NEC 3358

Abstract: 3543 5995 MARKING T90 2SC5289 nec k 813 2SC5192 2SC5288 2SC5289-T1 U 1504
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1.4464

Abstract: Dect 827 NE68939 NE69039 NE69039-T1 POS 10818 rf power amplifier transistor with s-parameters ic sc 4145
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

82054

Abstract: nec k 4145
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: MOTOROLA Order this document by MMDJ3N03BJT/D SEMICONDUCTOR TECHNICAL DATA P lastic Power Transistors M M DJ3N03BJT SO-8 for Surface Mount Applications M otorola Preferred Device • Collector -Emitter Sustaining Voltage — V c e O s u s = 30 Vdc (Min) @ lc = 10 mAdc

2SC5289

Abstract: 2SC5192 2SC5288 62629 1.4464 transistor Mu
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Hitachi DSA002743

Abstract: Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

HD155121F

Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

oIR 503

Abstract: Tektronix schematic schottky transistor spice
Contextual Info: TEKTRONI X INC/ INTEGR AT ED TCI/ INTEGRATED EIE D fiTDtilEM Q G G O n b CIRCUITS OPERATION , I L l f \ l. BIPOLAR PRODUCTS .ri. B “- r s p e c if ic a t io n s ! ORDERING INFORMATION j T -V 2 -2 Ï QUICKCHIP 6 FAMILY OF INTEGRATED CIRCUIT ARRAYS The QuickChip 6 family of Inte­

Contextual Info: V is h ay I n tertec h n o l o g y, I n c . I INNOVAT AND TEC O L OGY Instructional Guide N HN INDUCTORS O 19 62-2012 Inductors - Primer INDUCTORS 101 TABLE OF CONTENTS Introduction Magnetic Core Types Core Materials Electrical Specifications Inductor Technologies

Contextual Info: Order this document by MC33466/D MOTOROLA Fixed Frequency PWM M icropow er D C -to-D C C onverter The MC33466 series are micropower switching voltage regulators, specifically designed for handheld and laptop applications, to provide regulated output voltages using a minimum of external parts. A wide choice

marking aa5

Abstract: NCP360SNAET1G FET marking code On semiconductor date Code tsop-5 NCP360 NCP360MUTBG NCP360MUTXG NCP360SNT1G FET MARKING
Contextual Info: NCP360 USB Positive Overvoltage Protection Controller with Internal PMOS FET and Status FLAG http://onsemi.com NCP360 is able to disconnect the systems from its output pin in case wrong VBUS operating conditions is detected. The system is positive over-voltage protected up to +20ĂV.

Contextual Info: NCP360 USB Positive Overvoltage Protection Controller with Internal PMOS FET and Status FLAG http://onsemi.com NCP360 is able to disconnect the systems from its output pin in case wrong VBUS operating conditions is detected. The system is positive over-voltage protected up to +20ĂV.

MRF9745

Abstract: MOTOROLA L 358 Case 449-02 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order th is docum ent by MRF9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9745T1 The RF Small Signal Line Silicon L ateral FET N-Channel Enhancement-Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable

MTPG

Abstract: MTPG0
Contextual Info: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET Pow er Field E ffe c t Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

Silectron core

Abstract: TWC-500 permalloy 80 2605SC ring core permalloy bh curve supermalloy bh curve MAGNESIL - N Transformer and Inductor Design Handbook, orthonol ring core permalloy 80
Contextual Info: TAPE WOUND CORES Division of Spang & Company DESIGN MANUAL TWC-500 ABOUT MAGNETICS Since 1949 Magnetics, a division of Spang & Company, has been a leading world supplier of precision, high permeability magnetic components and materials to the electronics industry. Applications for