TRANSISTOR MTBF Search Results

Contextual Info: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°

FMB150

Abstract: an power 88-108 mhz ASI10588
Contextual Info: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and high VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current max. 100 mA handbook, halfpage

3F2 SMD Transistor

Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor

BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

MRF942

Abstract: NF50
Contextual Info: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features

MJE 340 transistor

Abstract: 3140e
Contextual Info: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and

Contextual Info: Part Number: Integra IB2731M110 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731M110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C

TRANSISTOR SMD MARKING CODE LF

Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
Contextual Info: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR • fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA

transistor motorola 114-8

Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
Contextual Info: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

MRF1057T1

Abstract: RN2322
Contextual Info: Order this document by MRF1057T1/D Advance Information NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 70 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @ 1.0 GHz, 3.0 V and 5.0 mA

GaAs FET operating junction temperature

Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .

NPN transistor 2n2222 Zin

Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
Contextual Info: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

200B

Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET

transistor rf m 1104

Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET

VK200-20/4B

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio, • Specified 28 Volt, 400 MHz Characteristics —

vk200-20

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF313 . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.

mallory 150 series

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

BD136

Abstract: MMBT2222ALT1 MRF858S
Contextual Info: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the