TRANSISTOR MS1281A Search Results

TRANSISTOR MS1281A Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR MS1281A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MS1281A Abstract: transistor MS1281A W108 MS1281 Contextual Info: MS1281A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1281A is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: PACKAGE STYLE .500 4L FLG • Class C Operation  PG = 9.0 dB at 150 W/108 MHz  Omnigold Metalization System	Original	MS1281A MS1281A 112x45° transistor MS1281A W108 MS1281	PDF

Catalog Datasheet

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MS1281A

Abstract: transistor MS1281A W108 MS1281
Contextual Info: MS1281A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1281A is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: PACKAGE STYLE .500 4L FLG • Class C Operation  PG = 9.0 dB at 150 W/108 MHz  Omnigold Metalization System

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MS1281A MS1281A 112x45° transistor MS1281A W108 MS1281

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