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    TRANSISTOR MRF151 Search Results

    TRANSISTOR MRF151 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR MRF151 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF151G

    Abstract: mrf151g 300 1202 transistor
    Contextual Info: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS


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    MRF151G MRF151G mrf151g 300 1202 transistor PDF

    zener z1

    Abstract: 12 volt zener diode 10 watts j718
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF1513T1 AN215A, zener z1 12 volt zener diode 10 watts j718 PDF

    j494 transistor

    Abstract: MOSFET j538 j718 J494
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1513T1 AN215A, j494 transistor MOSFET j538 j718 J494 PDF

    1147 x motorola

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


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    MRF1511T1 AN215A, 1147 x motorola PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


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    MRF1511T1 AN215A, PDF

    Transistor J182

    Abstract: j182 transistor motorola an721 application
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF1517T1 AN215A, Transistor J182 j182 transistor motorola an721 application PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF1517T1 AN215A, PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1518T1 AN215A, PDF

    on 5295 mosfet transistor

    Abstract: MOSFET j392 j392 MOSFET RF POWER TRANSISTOR VHF d 5287 transistor
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1518T1 AN215A, on 5295 mosfet transistor MOSFET j392 j392 MOSFET RF POWER TRANSISTOR VHF d 5287 transistor PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF1517T1 AN215A, PDF

    5252 F mosfet

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


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    MRF1511T1 AN215A, 5252 F mosfet PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF1518T1 AN215A, PDF

    MOSFET j538

    Abstract: j718
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1513T1 AN215A, MOSFET j538 j718 PDF

    5252 F 0911

    Abstract: 5252 F mosfet 5252 F 0918 1030F
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF

    Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513T1 The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1513T1 AN215A, PDF

    AN211A

    Abstract: AN215A AN721 MRF1517T1 MRF1517
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1517/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial


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    MRF1517/D MRF1517T1 MRF1517T1 AN211A AN215A AN721 MRF1517 PDF

    mrf151g 300

    Abstract: MRF151G
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF151G mrf151g 300 MRF151G PDF

    MRF1513

    Abstract: AN4005 AN211A AN215A AN721 MRF1513T1 MRF1513 equivalent
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial


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    MRF1513/D MRF1513T1 MRF1513T1 MRF1513 AN4005 AN211A AN215A AN721 MRF1513 equivalent PDF

    1147 x motorola

    Abstract: AN215A AN721 MRF1511T1 AN211A
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial


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    MRF1511/D MRF1511T1 MRF1511T1 1147 x motorola AN215A AN721 AN211A PDF

    Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518T1 The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1518T1 AN215A, PDF

    Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF1517 AN215A, MRF1517NT1 MRF1517T1 PDF

    MRF151G

    Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan
    MRF151G MRF151G MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations PDF

    AN721

    Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial


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    MRF1518/D MRF1518T1 MRF1518T1 AN721 J361 AN211A AN215A transistor j334 j327 transistor PDF

    MHZ50

    Contextual Info: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


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    MRF1513 MRF1513NT1 MRF1513T1 MHZ50 PDF