TRANSISTOR MRF151 Search Results
TRANSISTOR MRF151 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR MRF151 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MRF151G
Abstract: mrf151g 300 1202 transistor
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MRF151G MRF151G mrf151g 300 1202 transistor | |
zener z1
Abstract: 12 volt zener diode 10 watts j718
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MRF1513T1 AN215A, zener z1 12 volt zener diode 10 watts j718 | |
j494 transistor
Abstract: MOSFET j538 j718 J494
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MRF1513T1 AN215A, j494 transistor MOSFET j538 j718 J494 | |
1147 x motorolaContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband |
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MRF1511T1 AN215A, 1147 x motorola | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband |
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MRF1511T1 AN215A, | |
Transistor J182
Abstract: j182 transistor motorola an721 application
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MRF1517T1 AN215A, Transistor J182 j182 transistor motorola an721 application | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband |
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MRF1517T1 AN215A, | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband |
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MRF1518T1 AN215A, | |
on 5295 mosfet transistor
Abstract: MOSFET j392 j392 MOSFET RF POWER TRANSISTOR VHF d 5287 transistor
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MRF1518T1 AN215A, on 5295 mosfet transistor MOSFET j392 j392 MOSFET RF POWER TRANSISTOR VHF d 5287 transistor | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband |
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MRF1517T1 AN215A, | |
5252 F mosfetContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband |
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MRF1511T1 AN215A, 5252 F mosfet | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband |
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MRF1518T1 AN215A, | |
MOSFET j538
Abstract: j718
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MRF1513T1 AN215A, MOSFET j538 j718 | |
5252 F 0911
Abstract: 5252 F mosfet 5252 F 0918 1030F
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Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513T1 The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband |
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MRF1513T1 AN215A, | |
AN211A
Abstract: AN215A AN721 MRF1517T1 MRF1517
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MRF1517/D MRF1517T1 MRF1517T1 AN211A AN215A AN721 MRF1517 | |
mrf151g 300
Abstract: MRF151G
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MRF151G mrf151g 300 MRF151G | |
MRF1513
Abstract: AN4005 AN211A AN215A AN721 MRF1513T1 MRF1513 equivalent
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MRF1513/D MRF1513T1 MRF1513T1 MRF1513 AN4005 AN211A AN215A AN721 MRF1513 equivalent | |
1147 x motorola
Abstract: AN215A AN721 MRF1511T1 AN211A
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MRF1511/D MRF1511T1 MRF1511T1 1147 x motorola AN215A AN721 AN211A | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518T1 The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband |
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MRF1518T1 AN215A, | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband |
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MRF1517 AN215A, MRF1517NT1 MRF1517T1 | |
MRF151G
Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
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MRF151G MRF151G MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations | |
AN721
Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
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MRF1518/D MRF1518T1 MRF1518T1 AN721 J361 AN211A AN215A transistor j334 j327 transistor | |
MHZ50Contextual Info: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device |
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MRF1513 MRF1513NT1 MRF1513T1 MHZ50 |