TRANSISTOR MRF Search Results

Motorola 680

Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

Motorola transistor 358

Abstract: Case 449-02
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

MRF894

Contextual Info: MRF894 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application.

Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

Abstract: 2.4 ghz transmitter rf test
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR

MRF151G

Abstract: mrf151g 300 1202 transistor
Contextual Info: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

MRF141G

Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER
Contextual Info: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS

MRF262

Abstract: MRF264 MRF260 MRF261
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli­ cations in commercial and industrial equipment. NPN SILICO N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line Gallium Arsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT Designed for use in low voltage, moderate power amplifiers such as portable

MRF182

Abstract: transistor MRF182 1202 transistor 3004 fet 945 TRANSISTOR
Contextual Info: MRF182 RF POWER FET TRANSISTOR DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. PACKAGE STYLE .350 2L FLG FEATURES INCLUDE: • Bradband performance from HF to 1 GHz • Omnigold Metalization System

vk200 ferrite bead

Abstract: power transistor gaas transistor 9822 Case 449-02
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium Arsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT Designed for use in low voltage, moderate power amplifiers such as portable

MRF5811

Abstract: ADC IC 0808
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz

si diode 1N4007

Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON

BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

MRF644

Contextual Info: MRF644 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF644 is a gold metallized RF power transistor designed for 12.5 V Class-C applications in 450-513 MHz frequency range. PACKAGE STYLE .500 6L FLG A C FEATURES: E • Internal Input Matching Network

ATC100B3R3

Contextual Info: Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 LIFETIME BUY RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

MRF1001A

Abstract: high frequency transistor
Contextual Info: MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C

MRF141

Abstract: MOSFET RF POWER
Contextual Info: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS

motorola sps transistor

Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

transistor 955 MOTOROLA

Abstract: MRF16006
Contextual Info: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR

MRF942

Abstract: NF50
Contextual Info: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to