TRANSISTOR MOUNTING PADS Search Results

K177-353BQ2840

Abstract: K177-NA-353 K1778 TSC209-ZP k177 TSC506-NY K200-AC-403 TSC405-ZP K177-AC-353 K200-AC-353
Contextual Info: HEATSINKS & MOUNTINGS MOUNTING HARDWARE THERMAL INTERFACE MATERIALS KOOL-PADS KA150-2AC. Provides an efficient method of mounting heatsinks on to devices such as CPUs, DIL/SMT packages and other similar devices requiring effective transfer of generated heat. Highly conductive aluminium foil with adhesive applied to both sides negates the

V5592

Abstract: TOP-66 5598 transistor 8617 diode DIN 53505 marking code to3 diode marking J5P SOT TO-126 mounting V7387 8630F
Contextual Info: ASSMANN Die-cast-Heatsinks Electronic C om ponen ts Thermal Conductive Ceramic Pads Technical data Applications: Electro- and electronic-industry i. e. computers, TV sets, VTR, medical equipment, measuring instruments, motor car- and machineindustry, photovoltanie, aviation.

Contextual Info: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight filter on request.

DTS1005

Contextual Info: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight

CR50TE-DLF

Abstract: DTS1005 transistor smd cr CR50TE
Contextual Info: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight

Contextual Info: How To Handle Transistors Although SANYO makes ail possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the conditions under which the transistors are used. These

PCO-7120

Abstract: PCA-9145
Contextual Info: PCO-7120 PULSED LASER DIODE • • • • • • • Compact Economical OEM Module 500mA to 50A Output <9nS Rise Time Variable Pulse Width From 12nS to >1uS Repetition Frequency To 1MHz Diode May Be Mounted Directly On The PCO-7120 Pulsed Current Monitor Output

Contextual Info: CTLT853-M833 SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR TLM833 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and

SS14 SOD123

Abstract: SS14 DIODE schottky SS14 DIODE dc-dc DC SS14 diode Silicon Schottky Diode sod123 SMA-DIODE SOD523 footprint SS14 DIODE AN1039 high power bipolar transistor selection
Contextual Info: AN10393 BISS transistors and MEGA Schottky rectifiers - improved technologies for discrete semiconductors Rev. 01.00 — 01 September 2005 Application note Document information Info Content Keywords BISS transistor, MEGA Schottky rectifier, DC/DC converter, Loadswitch,

switching transistor msd

Abstract: Mil-R-39016/11 tyco mil relay
Contextual Info: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

half bridge TL494

Abstract: sine wave inverter tl494 circuit diagram UC3842 smps design with TL431 EI - 33c TRANSFORMER iw 1688 philips surface mount zener diode v6 smps lead acid battery charger schematic tl494 lm324 dc to ac inverters 2N3055 TRANSISTOR smps with uc3842 and tl431
Contextual Info: HB206/D Rev. 4, Feb-2002 Linear & Switching Voltage Regulator Handbook ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

BENT LEAD transistor TO-92 Outline Dimensions

Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Contextual Info: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI­ CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N

induction cooker fault finding diagrams

Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
Contextual Info: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when

wiring diagram brushless AC motor

Abstract: helicopter construction ACT5101-1 fast recovery 50amp flyback xfmr solar converter dc to dc diagram 25KW igbt 500V 2A
Contextual Info: Standard Products ACT5101-1 Brushless DC Motor Drive High Voltage 3-Phase www.aeroflex.com/Power March 29, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ 500VDC Rating 50Amp DC Rating Package Size 3.0" x 2.1" x 0.39" 4 Quadrant Control 6 Step Trapezoidal Drive Capability

Contextual Info: MICROCOUPLERS FOR HYBRID CIRCUITS m M C 0 2 2, M C 0 3 5, M C 074 n OPTOELECTRONIC PRODUCTS DIVISION FEATURES gk . • Variety of output circuits • Small size saves real estate • Guaranteed performance over full military tem­ perature range • Large thick film gold bonding pads

800w audio Amplifier diagram

Abstract: BRIDGE-RECTIFIER 10v ,1A LM318 8112-AG7 BRIDGE-RECTIFIER 800w audio amplifier circuit diagram AUGAT 8112-AG7 four-lead LM12CLK BRIDGE-RECTIFIER operation
Contextual Info: LM12CL 80W Operational Amplifier General Description The LM12 is a power op amp capable of driving ± 25V at ± 10A while operating from ± 30V supplies. The monolithic IC can deliver 80W of sine wave power into a 4Ω load with 0.01% distortion. Power bandwidth is 60 kHz. Further, a

Contextual Info: NJL7302L-F3/F5 Ambient Light Sensor GENERAL DESCRIPTION The NJL7302L-F3/F5 is the phototransistor with spectral response similar to human eyes and wide directivity. FEATURES 1. High IR reduction IR reduction ratio 0.007 @850nm,λp=100% 2. Lead pin package

MTP50N05E

Abstract: transistor MTP50N05E MTP50N05 MTP75N05HD equivalent MTP50N06E low voltage power transistor HDTMOS MTP50N05E equivalent MTP75N05HD RFG70N06
Contextual Info: EB201/D High Cell Density MOSFETs Low On–Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of

TO-126LP

Contextual Info: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle

800w audio Amplifier diagram

Abstract: 800w audio amplifier circuit diagram BRIDGE-RECTIFIER 1A BRIDGE-RECTIFIER 5v 1A 8112-AG7 800w power amplifier circuit diagram 800w audio power amplifier circuit diagram Inductive Load Driver APPLICATION OF BRIDGE-RECTIFIER IC 800w audio amplifier 12 v circuit diagram
Contextual Info: LM12,LM12CL LM12CL 80W Operational Amplifier Literature Number: SNOSBY8C LM12CL 80W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±25V at ±10A while operating from ±30V supplies. The monolithic IC can deliver 80W of sine wave power into a 4Ω load with 0.01%

transistor smd marking cfr

Contextual Info: The Leader in High Temperature Semiconductor Solutions Version: 2.2 CHT-VEGA-DATASHEET High-Temperature, Low Dropout, Adjustable Voltage Regulator +1.2V to +3.3V / 500mA General description Features The CHT-VEGA is a high-temperature, high-reliability, 500mA adjustable linear

MLP832

Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10
Contextual Info: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual