TRANSISTOR MOUNTING PADS Search Results

TO126 package

Abstract: PF730 Heatsinks TO247 package 220SA TO202 package Heatsinks TO247 SOT93 package TO126 TO218 package
Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS SOT32/TO126 package MAX247 package A range of innovative heatsinks for the STMicroelectronics MAX247 power transistor package. Utilise novel clip solutions to obtain optimum performance. PF730, PF732 MAX6263 Clip-on heatsinks, with a mounting hole, to fit a

C5098

Contextual Info: TO-5 CASE RELAY DPDT, HIGH CURRENT Series MCA Product Description A series of ultra miniature hermetically sealed relays constructed in a transistor style case, providing superior performance and established reliability characteristics. Designed for high density PCB mounting is available in a variety of sensitivities. Contact configurations and material improvements to

K177-353BQ2840

Abstract: K177-NA-353 K1778 TSC209-ZP k177 TSC506-NY K200-AC-403 TSC405-ZP K177-AC-353 K200-AC-353
Contextual Info: HEATSINKS & MOUNTINGS MOUNTING HARDWARE THERMAL INTERFACE MATERIALS KOOL-PADS KA150-2AC. Provides an efficient method of mounting heatsinks on to devices such as CPUs, DIL/SMT packages and other similar devices requiring effective transfer of generated heat. Highly conductive aluminium foil with adhesive applied to both sides negates the

V5592

Abstract: TOP-66 5598 transistor 8617 diode DIN 53505 marking code to3 diode marking J5P SOT TO-126 mounting V7387 8630F
Contextual Info: ASSMANN Die-cast-Heatsinks Electronic C om ponen ts Thermal Conductive Ceramic Pads Technical data Applications: Electro- and electronic-industry i. e. computers, TV sets, VTR, medical equipment, measuring instruments, motor car- and machineindustry, photovoltanie, aviation.

IPC-600E

Abstract: TRANSISTOR SUBSTITUTION
Contextual Info: P/N 1110748 Surface Mount-to-DIP JEDEC SOT-25, SOT-23A-6 Adapter FEATURES • Allows for breadboarding or substitution of Microgate SOT-23A-6 and SOT-25 IC and transistor packages into 0.100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder devices directly to topside of

Contextual Info: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight filter on request.

Contextual Info: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight filter on request.

DTS1005

Contextual Info: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight

CR50TE-DLF

Abstract: DTS1005 transistor smd cr CR50TE
Contextual Info: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight

TSC209-ZP

Abstract: transistor TSC506-NY WARTH TSC405 TSC607-ZP TSC607-NY TSC506-ZP WARTH thermal kool pads transistor TO220
Contextual Info: THERMAL Warth Thermal Transistor Gull Wing Clips TSC Material Voltage Isolation Plating / finish Thread size on Gull wings Property Steel / delta tone coat From 750V Nylon / Zinc delta tone M4 Test Method ASTM D149 mod Description Transistor gull wing clips:

Contextual Info: How To Handle Transistors Although SANYO makes ail possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the conditions under which the transistors are used. These

marking code cfc

Abstract: CTLM1034-832D CTLM1034-M832D CTLM1074-M832D TLM832D CTLM1034 marking cfc
Contextual Info: CTLM1034-M832D MULTI DISCRETE MODULE w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW VCE SAT NPN TRANSISTOR AND LOW VF SCHOTTKY RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM1034-832D consists of a Low VCE(SAT) NPN Transistor and Low

CTLM1034-M832D

Abstract: CTLM1074-M832D TLM832D CTLM1074
Contextual Info: CTLM1074-M832D MULTI DISCRETE MODULE w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW VCE SAT PNP TRANSISTOR AND LOW VF SCHOTTKY RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM1074-M832D consists of a Low VCE(SAT) PNP Transistor and a Low

Contextual Info: CTLM1034-M832D MULTI DISCRETE MODULE w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW VCE SAT NPN TRANSISTOR AND LOW VF SCHOTTKY RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM1034-832D consists of a Low VCE(SAT) NPN Transistor and Low

Contextual Info: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the

PCO-7120

Abstract: PCA-9145
Contextual Info: PCO-7120 PULSED LASER DIODE • • • • • • • Compact Economical OEM Module 500mA to 50A Output <9nS Rise Time Variable Pulse Width From 12nS to >1uS Repetition Frequency To 1MHz Diode May Be Mounted Directly On The PCO-7120 Pulsed Current Monitor Output

Contextual Info: CTLT953-M833 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR TLM833 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT953-M833 is a high performance 5.0A High Current PNP Transistor designed for applications where small size and

712d-26

Abstract: 712D-12 712D-5 teledyne discrete component Teledyne Relays 28vdc 7623k Teledyne TO5 relays 712tn-12 30 ampere relay DPDT transistor
Contextual Info: TELEDYNE RELAYS SERIES 712 COMMERCIAL/INDUSTRIAL TO-5 RELAYS DPDT SERIES DESIGNATION RELAY TYPE 712 DPDT basic relay 712D DPDT relay with internal diode for coil transient suppression 712TN DPDT relay with internal transistor driver and coil transient suppression diode

CTLT853-M833

Abstract: CTLT953-M833 TLM833
Contextual Info: CTLT853-M833 SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR TLM833 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and

Contextual Info: CTLT853-M833 SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR TLM833 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and

CTLT853-M833

Abstract: CTLT953-M833 TLM833 NC56
Contextual Info: CTLT953-M833 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR TLM833 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT953-M833 is a high performance 5.0A High Current PNP Transistor designed for applications where small size and

SS14 SOD123

Abstract: SS14 DIODE schottky SS14 DIODE dc-dc DC SS14 diode Silicon Schottky Diode sod123 SMA-DIODE SOD523 footprint SS14 DIODE AN1039 high power bipolar transistor selection
Contextual Info: AN10393 BISS transistors and MEGA Schottky rectifiers - improved technologies for discrete semiconductors Rev. 01.00 — 01 September 2005 Application note Document information Info Content Keywords BISS transistor, MEGA Schottky rectifier, DC/DC converter, Loadswitch,

Contextual Info: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible