TRANSISTOR MN611S Search Results

TRANSISTOR MN611S Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR MN611S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode RU 3AM Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)	Original		PDF
Contextual Info: Power Transistor MN611S ºC ºC VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA max 115 800 0.08 1.25 10 10 125 1500 0.12 1.5 105 400 Unit µA µA V V V mJ 45 4.44±0.2 10.2±0.3 1.4 ICBO IEBO VCEO hFE VCE (sat) VFEC ES/B min +0.3	Original	MN611S O220S	PDF
MN611S Abstract: transistor MJ 122 transistor MN611s Contextual Info: Power Transistor MN611S ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC ES/B VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA min 105 400 45 max 115 800 0.08 1.25 10 10 125 1500 0.12 1.5 Unit µA µA V V V mJ 4.44±0.2 10.2±0.3 (1.4) Test Conditions	Original	MN611S O220S MN611S transistor MJ 122 transistor MN611s	PDF
MN638S Abstract: sta464c SLA8004 SPF0001 STA464 STA509A si3003s Ignition ICs SLA2402 2SD2633 Contextual Info: Contents • Application Note for Regulator ICs ■ Dropper Type Regulator ICs • With Output ON/OFF Control • 3-terminal • 2-output 5 ■ Switching Type Regulator ICs SI-3001S SI-3003S SI-3101S SI-3201S ■ High-side Power Switch ICs • With Diagnostic Function	Original	SI-3001S SI-3003S SI-3101S SI-3201S SI-5151S SI-5153S SDH04 SLA2501M SLA2502M SPF5002A MN638S sta464c SLA8004 SPF0001 STA464 STA509A si3003s Ignition ICs SLA2402 2SD2633	PDF
MN638S Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein	Original	infringement0718 H1-C01EC0-0110015TA MN638S STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M	PDF
SMA2409M Abstract: spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103 Contextual Info: SANKEN ELECTRIC CO.,LTD. CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein	Original	H1-C01ED0-0607020TA SMA2409M spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103	PDF