TRANSISTOR MARKING YK Search Results

WK2 94V0

Abstract: wk2 94v-0 transistor wu1 wk1 sot-23 wk2 sot 23 94v0 wk2 marking wk1 wu1 sot-23 marking wk2 marking wu1
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VCE / IC VCEO IC V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Power Gain Resistor Dissipation Outline

WK2 94V0

Abstract: transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector Collector to DC Current Gain Emitter Current Marking Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Equivalent Gain Outline

marking WJ sot-23

Abstract: chdtc143eept SOT-723 NPN SOT-23 WF CHDTC114EEPT NPN SOT-23 MARKING Wj ZUA SOT23 CHDTC143XUPT transistor marking 44 sot23 CHDTC143XMPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector Collector to DC Current Gain Emitter Current Marking Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Bias Equivalent Gain Outline

NPN SOT-23 MARKING Wj

Abstract: NPN SOT-23 WF NPN SOT-23 MARKING WF marking WJ sot-23 marking T02 sot-23 CHDTC114YU marking eua Marking 723 SOT-23 723 SOT-723 SOT-723
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VCE / IC VCEO IC V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Power Gain Resistor Dissipation Outline

Contextual Info: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

RN1910FE

Abstract: RN1911FE RN2910FE RN2911FE transistor marking YK ic marking YK
Contextual Info: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE, RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN1110FT

Abstract: RN1111FT RN2110FT RN2111FT
Contextual Info: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT, RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin

Contextual Info: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

RN1710JE

Abstract: RN2710JE RN2711JE transistor marking YK 6 pin 1711JE
Contextual Info: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

RN1910FE

Abstract: RN1911FE RN2910FE RN2911FE marking YK 6-pin transistor marking YK 6 pin
Contextual Info: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

RN1710JE

Abstract: RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin
Contextual Info: RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)

Contextual Info: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

marking 2u

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA123YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB123YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTD123YKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC123YKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346

transistor marking YK 6 pin

Contextual Info: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)