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    TRANSISTOR MARKING V79 GHZ Search Results

    TRANSISTOR MARKING V79 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F151/B2A
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) PDF Buy
    5962-8672601FA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) PDF Buy
    ICL7667MJA/883B
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy

    TRANSISTOR MARKING V79 GHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor marking v79 ghz

    Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


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    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transistor marking v79 ghz NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2 PDF

    transistor marking M04 GHZ

    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


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    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B PG10586EJ02V0DS transistor marking M04 GHZ PDF

    NE3508M04-T2-A

    Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original
    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508 PDF

    NEC Ga FET marking L

    Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original
    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B NE3508M04-T2B-A NEC Ga FET marking L NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2 PDF

    NE3508M04-T2-A

    Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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