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    TRANSISTOR MARKING SA 8 Search Results

    TRANSISTOR MARKING SA 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F350/BEA
    Rochester Electronics LLC 54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA) PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    5962-8672601FA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) PDF Buy
    54F151/B2A
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) PDF Buy

    TRANSISTOR MARKING SA 8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC848F

    Abstract: BC858F
    Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F


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    BC848F BC858F OT-23F KST-2091-000 100mA, BC848F BC858F PDF

    BC848

    Abstract: Transistor SA sot-23 BC858
    Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank


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    BC848 BC858 OT-23 KST-2008-000 100mA, BC848 Transistor SA sot-23 BC858 PDF

    CSD1306

    Contextual Info: CDU CSD1306 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA C K A G E O U TLIN E D E T A IL SA L L D IM EN SIO N S IN m m CSD1306E-6E _3.0_ 2.8 0.48 0.14 0.09 "031 Pin configuration JL 0.70 0.50 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4


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    CSD1306 CSD1306E-6E CSD1306 PDF

    41 BF transistor

    Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
    Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage


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    r-33-Ã BF869SABF871 T0126 15A3DIN 41 BF transistor transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44 PDF

    ic LA 7841

    Abstract: LA 7841 LG 7CA 2005A transistor sc 308 2SD1145 784E S/LG 7CA
    Contextual Info: Ordering number: EN 7 8 4 E 2SD1145 i SA t YO NPN Epitaxial P lanar Silicon Transistor High-Current Driver Applications A p p licatio n s . Relay drivers, ham m er drivers, lamp drivers, strobe DC-DC convertrers, motor drivers. F e a tu re s • Low saturation voltage


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    2SD1145 100ms, 2034/2034A SC-43 7tlt17D7b ic LA 7841 LA 7841 LG 7CA 2005A transistor sc 308 2SD1145 784E S/LG 7CA PDF

    2005A

    Abstract: 2SC3000 J160 transistor marking JB
    Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


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    2SC3000 2034/2034A SC-43 7tlt17D7b 2005A 2SC3000 J160 transistor marking JB PDF

    2SK222

    Abstract: LM 2003A LM 8361
    Contextual Info: Ordering number:EN 836F _ 2 S K 2 2 2 N-Channel Junction Silicon FET SAiYO i Low-Noise AF Amp Applications FEATURES * Ultra low noise figure * Large lyfsl. • Low gate leakage current. ABSOLUTE MAXIMUM RATINGS/Ta = 25° C unit V Drain-source voltage


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    2SK222 rO-92 3C-43 2SK222 LM 2003A LM 8361 PDF

    b0349

    Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
    Contextual Info: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage


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    00QTM31 BF870SBF872S T0126 15A3DIN b0349 BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570 PDF

    Contextual Info: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)


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    2SA1656/2SC4363 2SA1656 rO-92 3C-43 PDF

    equivalent 2SC2655

    Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA
    Contextual Info: TOSHIBA {DI SC RE TE /O PT O} Sb D eT | TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)


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    0Q07104 OT-89) T092MOD 2SC2880 2SA949 2SA1200 2SA1201 2SA1202 2SC2882 equivalent 2SC2655 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA PDF

    2SK304

    Contextual Info: Ordering number: EN 8 5 0 D A P P L IC A T IO N S • Ideal fo r potentiometers, analog switches, low frequency am plifiers, and constant current supplies. A B S O L U T E M A X IM U M R A T IN G S /T a = 25°C Drain-source voltage V d SS Gate-drain voltage


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    2SK304 -10/iA 2034/2034A SC-43 7tlt17D7b PDF

    TA-1001

    Abstract: ta1001 TA 1001 1601TI 2SD2098 T100 TA-10-01 transistor DJ marking
    Contextual Info: 2SD2098 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2098; D J ^ , where ★ is hFE code • • 2SD2098 (MPT3) ^4.5c_+o0'2 .i 1.6±0.1 Ti sì low collector saturation voltage,


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    2SD2098 OT-89, SC-62) 2SD2098; 2SD2098 TA-1001 ta1001 TA 1001 1601TI T100 TA-10-01 transistor DJ marking PDF

    Contextual Info: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS


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    2SA1362 23fl33T4 PDF

    Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    847PN Q62702-C2374 OT-363 Mav-12-1998 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC143ZUA/DTC143ZKA/DTC143ZSA R0. 25 05 3. 16+0. 2. 80¡ À 0. 05 1. 60¡ À 0 . 05 ( 1) 1. 9 À. 05 2. 00¡ 0 ( 3) 0. 35 ( 3) 0. 30 1. 30¡ À 0. 03 ( 1) 15. 30max


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    DTC143ZUA/DTC143ZKA/DTC143ZSA 100MHz PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 2 A ICM: Collector-base voltage


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    OT-89 KTC4377 OT-89 PDF

    Contextual Info: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü


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    Q62702-C2529 OT-363 PDF

    KTC4377

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    OT-89 KTC4377 OT-89 KTC4377 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4377 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


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    OT-89-3L KTC4377 OT-89-3L PDF

    max7575

    Abstract: BCW66F BCW66G BCW66H
    Contextual Info: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER


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    BCW66F, BCW66G BCW66H BCW66F max7575 BCW66F BCW66H PDF

    Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1


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    KTC4377 OT-89 500mW 500mA PDF

    Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR


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    BCW65A, BCW65B BCW65C BCW65A PDF

    Contextual Info: Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1


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    KTC4377 OT-89 500mW 500mA PDF

    2SA1572

    Contextual Info: Ordering number: EN 2 4 5 8 2SA1572/2SC4067 PNP/ NPN Epitaxial Planar Silicon Transistors I SAKYOi Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance: R1=0, R2=47kii


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    2SA1572/2SC4067 47kii SC-43 rO-92 3C-43 2SA1572 PDF