TRANSISTOR MARKING SA 8 Search Results

BC848F

Abstract: BC858F
Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F

BC848

Abstract: Transistor SA sot-23 BC858
Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank

CSD1306

Contextual Info: CDU CSD1306 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA C K A G E O U TLIN E D E T A IL SA L L D IM EN SIO N S IN m m CSD1306E-6E _3.0_ 2.8 0.48 0.14 0.09 "031 Pin configuration JL 0.70 0.50 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

ic LA 7841

Abstract: LA 7841 LG 7CA 2005A transistor sc 308 2SD1145 784E S/LG 7CA
Contextual Info: Ordering number: EN 7 8 4 E 2SD1145 i SA t YO NPN Epitaxial P lanar Silicon Transistor High-Current Driver Applications A p p licatio n s . Relay drivers, ham m er drivers, lamp drivers, strobe DC-DC convertrers, motor drivers. F e a tu re s • Low saturation voltage

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SK222

Abstract: LM 2003A LM 8361
Contextual Info: Ordering number:EN 836F _ 2 S K 2 2 2 N-Channel Junction Silicon FET SAiYO i Low-Noise AF Amp Applications FEATURES * Ultra low noise figure * Large lyfsl. • Low gate leakage current. ABSOLUTE MAXIMUM RATINGS/Ta = 25° C unit V Drain-source voltage

b0349

Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
Contextual Info: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

Contextual Info: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)

equivalent 2SC2655

Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA
Contextual Info: TOSHIBA {DI SC RE TE /O PT O} Sb D eT | TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)

2SK304

Contextual Info: Ordering number: EN 8 5 0 D A P P L IC A T IO N S • Ideal fo r potentiometers, analog switches, low frequency am plifiers, and constant current supplies. A B S O L U T E M A X IM U M R A T IN G S /T a = 25°C Drain-source voltage V d SS Gate-drain voltage

TA-1001

Abstract: ta1001 TA 1001 1601TI 2SD2098 T100 TA-10-01 transistor DJ marking
Contextual Info: 2SD2098 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2098; D J ^ , where ★ is hFE code • • 2SD2098 (MPT3) ^4.5c_+o0'2 .i 1.6±0.1 Ti sì low collector saturation voltage,

Contextual Info: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC143ZUA/DTC143ZKA/DTC143ZSA R0. 25 05 3. 16+0. 2. 80¡ À 0. 05 1. 60¡ À 0 . 05 ( 1) 1. 9 À. 05 2. 00¡ 0 ( 3) 0. 35 ( 3) 0. 30 1. 30¡ À 0. 03 ( 1) 15. 30max

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 2 A ICM: Collector-base voltage

Contextual Info: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü

KTC4377

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4377 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

max7575

Abstract: BCW66F BCW66G BCW66H
Contextual Info: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1

Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1

2SA1572

Contextual Info: Ordering number: EN 2 4 5 8 2SA1572/2SC4067 PNP/ NPN Epitaxial Planar Silicon Transistors I SAKYOi Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance: R1=0, R2=47kii