TRANSISTOR MARKING N 1 Search Results

Contextual Info: SILICON N -P -N HIGH-VOLTAGE TRANSISTOR N-P-N transistor Marking CMBT5550 = IF PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N -P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage Collector current DC

Contextual Info: CMBT5550 SILICON N -P-N HIGH-VOLTAGE TRANSISTOR N -P-N transistor Marking CMBT5550 = IF PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .1 4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base v o lta g e open emitter

CMBT5551

Contextual Info: CMBT5551 SILICON N -P -N HIGH-VOLTAGE TRANSISTOR N-P-N transistor Marking CMBT5551 = Gl PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

np TRANSISTOR smd SOT23

Abstract: smd transistor marking np CMBT2369
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: CDU CMBT5551 SILICON N -P -N HIGH-VOLTAGE TRANSISTOR N-P-N transistor Marking CMBT5551 = GI PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun 3.0 2 . 8" 0.-14 0.48 0.38 -| ÍT 0 § 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 2.4 1.2

TRANSISTOR SMD MARKING g1

Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

marking 65B

Abstract: BCW65B BCW65A BCW65C
Contextual Info: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _

transistor marking 1f

Abstract: CMBT5550
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

equivalent transistor smd 3 em 7

Abstract: CMBT5550 ts 4141 TRANSISTOR
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

max6032

Abstract: BCW65B BCW65C BCW65A
Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 . 02 _ 0.89

Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 2.6 Pin configuration 1.4 1.2 2.4 R0.1 ÔômT 1 = BASE 2 = EMITTER

1B marking transistor

Abstract: 33T4 CMBT2369
Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

cmbt918

Contextual Info: eon CMBT918 VHF/UHF TRANSISTOR N-P-N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 o.er 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS

CMBT6517

Contextual Info: CMBT6517 HIGH-VOLTAGE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT6517 = 1Z _3.0_ 2.6 0.48 0.38 Pin configuration 0.14 0.09 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR ^.02 0.89" 0.60 2.00 " 4-0 1.80 ABSOLUTE MAXIMUM RATINGS

Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1- ° 2_ "

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

Contextual Info: HIGH VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT5400 = K? PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)