TRANSISTOR MARKING LF Search Results

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics

727 Transistor power values

Contextual Info: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BF 777 NPN Silicon RF Transistor Preliminary Data • For UHF/VHF frequency converters and local oscillators. • /T = 2.2 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BF 777

NPN transistor x11

Abstract: marking code 2AW SL 100 NPN Transistor base emitter collector 6-pin "454" UMX11N 2SC2059K 6pin MARKING code T surface mount transistor 8 TRANSISTOR x11 HZ U35
Contextual Info: UMX11N Transistor, dual, NPN Features Dimensions Units: mm • available in UMT6 (UMT6) package • package marking: X11 • package contains two independent NPN transistors (2SC2059K) • • same size as UMT3 (UMT, C-70) so same placement machine can be

Contextual Info: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA

BT 815 transistor

Abstract: BT 816 transistor
Contextual Info: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code

62702-F

Contextual Info: 3EE D • Ô23b 320 GGlfc^B? S « S I P 3 1 - 2,3 NPN Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS _ ^7P ' • For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering c o d e ^ tape and reel ^

bss84

Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking

Contextual Info: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking

Contextual Info: SIEMENS B S S 192 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type VDS b BSS 192 -240 V -0.15 A Type BSS 192 Ordering Code Q62702-S634 %S(on) 20 Q. Package Marking SOT-89 KB Tape and Reel Information

transistor l1w

Abstract: s217 diode
Contextual Info: BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 296 100 V 0.8 A 0.8 Ω TO-92 SS 296 Type BSS 296 Ordering Code Q62702-S217

Q62702-S217

Abstract: bss296
Contextual Info: SIEMENS BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Pin 1 Pin 2 D G Type BSS 296 Vds 100 V Type BSS 296 Ordering Code Q62702-S217 0.8 A ffDS(on) 0.8 Û Pin 3 Package Marking TO-92 SS 296

SS89 transistor

Abstract: BSS89 s 89
Contextual Info: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.3 A B S S 89 240 V Type B S S 89 B S S 89 B SS 89 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 ffDS(on) 6Q Package Marking

FCK 111

Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP
Contextual Info: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê

xeh 250 120

Abstract: T108 TC-6056 UUJK
Contextual Info: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E

SOT89 marking cec

Abstract: PNP TRANSISTOR SOT89 MARKING 93 SOT89 sot89 marking 93 marking chc SOT89 BC868 BC869 BC869-16 BC869-25
Contextual Info: Philips Sem iconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 em itter 2 collector 3 base • Low voltage, high current LF applications.

Contextual Info: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK.

Contextual Info: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK.

Contextual Info: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.

2SC3650

Abstract: 2Sc3650 equivalent MARKING CF
Contextual Info: 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low collector-emitter saturation voltage VCE sat High DC current gain Large current capacity LF amp, various drivers, muting circuit MAXIMUM RATINGS (TA=25 oC unless otherwise noted)

transistor c 2053

Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A
Contextual Info: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2

Contextual Info: LFC789D25 DUAL LINEAR FET CONTROLLER SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004 D Two Independent Controllers for D OR PW PACKAGE TOP VIEW Regulation of: − Fixed 2.5-V and an Adjustable Output − ±2% (Max) Regulation Across Temperature and Load (1 mA to 3 A)