TRANSISTOR MARKING L2 Search Results

CQ 523

Abstract: MARKING CODE cq sot-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping

L2SC2411KRLT1G

Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping

BULB128D-BT4

Contextual Info: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z We declare that the material of product compliance with RoHS requirements. L2SC4083NT1G Series Ordering Information Device Marking Shipping L2SC4083NT1G N01 3000/Tape&Reel L2SC4083NT3G N01 10000/Tape&Reel

D1758

Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083NWT1G z 3 Ordering Information Device 1 Marking 2 Shipping L2SC4083NWT1G 4N 3000/Tape&Reel L2SC4083NWT1G 4N 10000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083QWT1G z 3 Ordering Information 1 2 Device Marking Shipping L2SC4083QWT1G 4Q 3000/Tape&Reel L2SC4083QWT1G 4Q 10000/Tape&Reel

REF 0425

Abstract: L2SC4083QWT1G marking 4Q
Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083QWT1G z 3 Ordering Information 1 2 Device Marking Shipping L2SC4083QWT1G 4Q 3000/Tape&Reel L2SC4083QWT1G 4Q 10000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083PWT1G z 3 Ordering Information Device 1 Marking 2 Shipping L2SC4083PWT1G 1D 3000/Tape&Reel L2SC4083PWT1G 1D 10000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series FEATURE ƽEpitaxial planar type 3 ƽComplementary to L2SA1036K ƽ We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781K*LT1 3 COLLECTOR 1 3 BASE 2 EMITTER 1 2 SOT– 23 FAbsolute maximum ratings Ta = 25_C FDEVICE MARKING L2SD1781KRLT1=AFR L2SD1781KQLT1=AFQ FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE

318M

Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ

L2SC2411KQLT1G

Abstract: L2SC2411KRLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽ We declare that the material of product are Halogen Free and 2 compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: UTC MMBTH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 MARKING 2 3E SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C

marking 82 sot343

Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Contextual Info: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

OF IC 7909

Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
Contextual Info: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE

marking R1P

Abstract: SST2222A RXT2222A FDCT2222A MMST2222A PN2222A T100 T106 T116 T146
Contextual Info: Transistors NPN Medium Power Transistor Switching I UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •Package, marking and packaging specifications

BFG505W

Abstract: MLC040
Contextual Info: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

d1805

Abstract: STD1805-1 STD1805 STD1805T4
Contextual Info: STD1805 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ Ordering Code Marking Shipment STD1805T4 D1805 Tape & Reel STD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC

d1802

Abstract: transistor d1802 d1802 transistor transistor d1802 dpak STD1802-1 SSD1802 STD1802 STD1802T4 sd1802
Contextual Info: STD1802 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ Ordering Code Marking Shipment STD1802T4 D1802 Tape & Reel STD1802-1 D1802 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC

STMicroelectronics DPAK Marking CODE

Abstract: BULD1101E BULD1101ET4
Contextual Info: BULD1101ET4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULD1101ET4 BULD1101E Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

d1802 transistor

Abstract: d1802 transistor d1802 transistor d1802 dpak STD1802-1 ic d1802 STD1802 STD1802T4
Contextual Info: STD1802 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ Ordering Code Marking Shipment STD1802T4 D1802 Tape & Reel STD1802-1 D1802 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC