TRANSISTOR MARKING DM W Search Results

TRANSISTOR L 287 A

Abstract: 2SD2170 CE marking code diode sc-62
Contextual Info: 2SD2170 Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2170; DM-*, where ★ is hFE code • built-in 90 J ” V Zener diode between collector and base • low fluctuation of Zener voltage

SL 100 NPN Transistor

Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
Contextual Info: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures

TRANSISTOR SMD MARKING CODE JSs

Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

FP6142

Abstract: FP6142-33C5G FP6142-28S5G FP6142-28C5G FP6142-33 FP6142-25S5G 705 transistor FP6142-33S5P 150 mA CMOS Low-Dropout Regulator sot 23-5 FP6142-15S5P
Contextual Info: FP6142 fitipower integrated technology lnc. 500mA Low Noise LDO with Soft Start and Output Discharge Function Description Features The FP6142 is a family of CMOS low dropout LDO regulators with a low dropout voltage of 250mV at 500mA designed for noise-sensitive portable device,

Tantalum phase diagram band gap

Abstract: supply with dm 100 marking code Z0 5pin FP6142-25S5G
Contextual Info: FP6142 fitipower integrated technology lnc. 500mA Low Noise LDO with Soft Start and Output Discharge Function Description Features The FP6142 is a family of CMOS low dropout LDO regulators with a low dropout voltage of 250mV at 500mA designed for noise-sensitive portable device,

35vt

Abstract: 2SC4639
Contextual Info: Ordering number: EN3482. _ F C 1 2 T R : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the

F3200Z

Abstract: 050gj TBD 135 Transistor
Contextual Info: MOTOROLA Order this document by MMDF3200Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F 3200Z WaveFET Motorola Preferred Device Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 11.5 AMPERES

TRANSISTOR SMD MARKING CODE pKX

Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
Contextual Info: • bLiSB'm DÜBSÖIO b 7 4 ■ N AMER P H I L I P S / D I S C R E T E APX b7E PMBF170 D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a Surface Mounted Device SMD in thin and thick-film circuits w ith applications in relay, high-speed

transistor SMD DK

Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25

Contextual Info: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer

Contextual Info: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed

transistor marking code 325

Abstract: BSP110 marking r8v
Contextual Info: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer

BFS80

Abstract: BSS123L MWRC BSS123I bfs 417
Contextual Info: MO T O ROLA s c x s t r s /r 15E D I t,3b7ESM QGflbb'il b | f T>D.?-p.5" M A X IM U M RATINGS Unit Symbol Value Drain-Source Voltage V o ss 100 VdC Gate-Source Voltage Vg S ±35 Vdc id <DM 0.17 0.68 Symbol Max Unit PD 225 mW 1.8 mW/°C RftiA 556 °C/W PD 300

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

tl431 TRANSISTOR equivalent

Abstract: TL431 transistor transistor TL431 to92 transistor TL431 TL431 TL431ACT TL431 5.0v TO-92 TRIAC 226 b transistor TL431 to-92 tl431aidr2g
Contextual Info: TL431, A, B Series, NCV431A, B Programmable Precision References The TL431, A, B integrated circuits are three-terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These

Contextual Info: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .

Contextual Info: DATA SHEET NEC / M OS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit ; mm The 2S J462 is a switching device which can be driven directly 5.7 ± 0 J by an 1C operating at 3 V,

d3n03

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High C ell D ensity H D TM O S process.

d33-02

Abstract: transistor motorola 351 D3302 motorola linear
Contextual Info: MOTOROLA Order this document by MTD3302/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTD3302 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 1° mO WaveFET™ devices are an advanced series of power MOSFETs which utilize M otorola’s

C200H-DA004

Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
Contextual Info: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

Contextual Info: Tem ic S 392 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency Dimensions in mm technical drawings according to DIN

h11cx

Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled