TRANSISTOR MARKING DM W Search Results

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

transistor SMD DK

Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25

Contextual Info: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer

Contextual Info: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed

N6A07

Abstract: TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
Contextual Info: ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V BR DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .

C200H-DA004

Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
Contextual Info: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to

D3207

Contextual Info: MOTOROLA Order this document by MMDF32D7/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s

MMDF3304

Abstract: motorola linear
Contextual Info: MOTOROLA Order this document by MMDF3304/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUALTMOS POWER MOSFET 7.3 AMPERES 30 VOLTS RDS on = 25 m il WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s

melcher bM 3000

Abstract: melcher LM 1000 LM 2000 melcher lm 3000 melcher Melcher CM-1000 Melcher bM 2000 melcher bM 1000 Melcher dc-dc converter bm 1000 melcher DM 3000 melcher am 3000 converter
Contextual Info: M-Family DC-DC Converters <100 W 50 W DC-DC AC-DC Converters Rugged Environment M-Family Class I Equipment Single output: series AM.LM 1000 Dual output: series AM.LM 2000 Triple output: series AM.LM 3000 Class II Equipment (double insulation) Single output: series CMZ/DMZ/LMZ 1000

1E-006

Abstract: IRGB4062DPBF
Contextual Info: IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA

Optical encoder mouse encoder

Abstract: diagram toshiba a100 encoder wheel mouse scroll MOUSE ENCODER output ADNS-2610 3 pin mouse scroll encoder computer mouse circuit MOUSE ENCODER power 4 pin phototransistor Mouse TC9350BFN-T00
Contextual Info: TC9350BFN-T00,TC9350BFN-T01 TOSHIBA CMOS Type Integrated Circuit Silicon Monolithic TC9350BFN-T00,TC9350BFN-T01 USB Mouse Controller IC The TC9350BFN is a USB 1.1 mouse controller IC. It can communicate with Agilent's ADNS-2610 optical mouse sensor. Features

IRGB4062D

Abstract: IRGP4062D
Contextual Info: PD - 97190 IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA

2SC3773

Abstract: SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

SRT2-ID16-1

Contextual Info: CompoBus/S New Products • Programmable Slaves • SYSMAC CPM2C CPU Units with CompoBus/S Master Functions • Waterproof Terminals • Sensor Terminals • Remote I/O Modules Cat. No. Q103-E1-7 Maximum Communications Cycle Time of Only 1 ms Long-distance Communications Mode

TRANSISTOR 2067

Contextual Info: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i)

IC TA 31101

Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the

NCP2860

Abstract: NCP2860DM277R2
Contextual Info: NCP2860 300 mA Very Low Noise, Low Dropout Linear Regulator The NCP2860 is a low noise, low dropout linear regulator that is offered with an output voltage of 2.77 V. It supplies 300 mA from 3.0 V to 6.0 V input. If wished, the “SET’’ pin enables to adjust the output

C96A

Abstract: 97190D
Contextual Info: PD - 97190D IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA

P4062

Abstract: IRGB4062DPBF irgp4062dpbf P4062DPbF 1E-006 IRGP4062D TO-247AC Package igbt IRGB4062D IRGB4062
Contextual Info: PD - 97190B IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA

SANYO marking kf

Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Contextual Info: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

transistors BC 458

Abstract: equivalent transistor TL431AC bc DM 0365 R pin EQUIVALENT TL431CDR2G TL431BIDR2G TL431ACDR2G TL431ACDG TL431AILPRMG mc7805 transistor BC 635
Contextual Info: TL431, A, B Series, NCV431A, B Programmable Precision References The TL431, A, B integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These