TRANSISTOR MARKING CS Search Results

ts 4141 TRANSISTOR smd

Abstract: CSA1162 CSA1162GR CSA1162Y equivalent transistor smd 3 em 7 MARKING SMD pnp TRANSISTOR ec
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y–3E CSA1162GR G –3F Pin configuration 1 = BASE

transistor smd marking Y 1 sot-23

Abstract: ts 4141 TRANSISTOR smd CSA1362 CSA1362GR MARKING SMD pnp TRANSISTOR ec Device marking 160
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P–N–P transistor Marking CSA1362GR = 62 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1162Y–3E

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y–3E CSA1162GR G –3F Pin configuration 1 = BASE

CSA1362

Abstract: CSA1362GR
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P–N–P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1362GR = 62 Pin configuration

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

CSA1162

Abstract: CSA1162GR CSA1162Y-3E
Contextual Info: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1162Y-3E CSA1162GR G —3F 3.0_ 2.8 0.48 038 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.8ST

smd transistor marking BL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F

Contextual Info: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y-3E CSA1162GR G -3F PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.09 0.48 0.38 3 2.6 2.4 _1.02

Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor

Contextual Info: CDU CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1 G 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.09 0.48 0.38 3 2.6 2.4 u -° d

A1362

Abstract: CSA1362 CSA1362GR transistor marking CS
Contextual Info: 23033^4 DDGOflbT CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor PA CKA G E O UTLIN E DETAILS ALL D IM EN SIO N S IN m m Marking CSA1362GR = AE _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

BC847UF

Abstract: Transistor KST-3041-001 BC857UF transistor marking CS
Contextual Info: BC847UF f Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=45V • Complementary pair with BC857UF Ordering Information Type NO. Marking BC847UF CS Package Code SOT-323F

TRANSISTOR BL 100

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y
Contextual Info: CDU CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PA CKA G E OU TLIN E DETAILS A LL DIM ENSIO NS IN m m Marking CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1 G _3.0_ 2.8 0.14 0.48 0.33 Pin configuration 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: 2 3 0 3 3 ^ 4 0 0 0 0 6 7 3 53ft CSD1306 HL SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE OUTLINE DETAILS ­ ALL DIMENSIONS IN mm CSD1306E-6E J.0 _ 2.8 0.14 0.48 "•^pnü9 CT38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70

transistor cs 13001

Abstract: CS 13001 BC847UF BC857UF 13001 TRANSISTOR cs 13001 TRANSISTOR KST-3041-001
Contextual Info: f BC847UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=45V • Complementary pair with BC857UF Ordering Information Type NO. Marking BC847UF CS Package Code SOT-323F

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

Contextual Info: 23033*34 Ü DO Ga b? 234 • CSA1162 CDÎL LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2 . 8~ 0.48 0.38 3 Pin configuration 1 = BASE

Contextual Info: CSC2712 CDÎL SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1G _3.0_ 2.8 0.14 6.09 0.48 0.38 Pin configuration 0.70 0.50 3 1 = BASE 2 = EMITTER

CSA1362GR

Abstract: transistor K 1413 CSA1362
Contextual Info: CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P-N -P transistor PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m Marking CSA1362GR : AE _3 .0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER • 3 = COLLECTOR 2.6 2.4 _K°2_ 0.89 0.60

D1638

Abstract: marking 9AW CSD1638
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD1638 9AW TO126 MARKING : CDIL D1638 Low Freq. Power Amp. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL

cd655e

Abstract: cd655 CSD655
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 9AW TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL