TRANSISTOR MARKING CODES 2P Search Results

marking A1 TRANSISTOR

Abstract: 2PA1774 2PC4617 2PC4617Q 2PC4617R 2PC4617S SC-75
Contextual Info: 2PC4617 NPN general-purpose transistor Rev. 04 — 25 November 2004 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT416 SC-75 plastic package. The PNP complement is 2PA1774. 1.2 Features • Low current (max. 150 mA)

marking A1 TRANSISTOR

Abstract: 2PA1576 2PC4081 2PC4081Q 2PC4081R 2PC4081S transistor sc-70 marking codes
Contextual Info: 2PC4081 NPN general-purpose transistor Rev. 05 — 25 November 2004 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT323 SC-70 plastic package. The PNP complement is 2PA1576. 1.2 Features • Low current (max. 150 mA)

transistor c 2053

Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A
Contextual Info: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2

Contextual Info: bbS3T31 OQEbOSfi 161 H A P X Philips Semiconductors NPN general purpose transistor 2PD602; 2PD602A N AUER PHILIPS/DISCRETE FEATURES Objective specification b?E J> PIN CONFIGURATION • Large collector current • Low collector-emitter saturation voltage. DESCRIPTION

2PD601A

Contextual Info: bbsa^ai oosbGMT Philips Semiconductors » apx PNP general purpose transistor 2PB709; 2PB709A N ANER PHILIPS/DISCRETE FEATURES Objective specification b?E ]> PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. c DESCRIPTION

sc59

Abstract: BH ar transistor 2PB709R 2PB709S 2PD601A lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q
Contextual Info: Philips Semiconductors H 7 1 1 0 fi2 b 0 G7 D0 1 S b 4 fi IH P H IN PNP general purpose transistor FEATURES Objective specification 2PB709; 2PB709A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. & DESCRIPTION a PNP transistor in a plastic SC59

transistor 2061

Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Contextual Info: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59

2PB710S

Abstract: 2PB710 2PB710A 2PB710AQ 2PB710Q 2PB710R 2PD602 2PD602A SC59 transistor marking CS
Contextual Info: Philips Semiconductor« b b 5 3 * i3 1 DDgbd-SS 7b3 M A PX PNP general purpose transistor 2PB710; 2PB710A N AHER PHILIPS/DISCRETE FEATURES Objective specification b7E D PIN CONFIGURATION • Large collector current • Low collector-emitter saturation

2PB710

Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
Contextual Info: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-

2PB710R

Abstract: 2PB710S transistor t05 2PB710AR 2PB710Q 2PB710 2PB710A 2PB710AQ 2PB710AS 2PD602
Contextual Info: Philips Semiconductors Ml 7 1 1 Qö c?b GOVODlfl 357 H P H IN PNP general purpose transistor FEATURES Objective specification 2PB710; 2PB710A PIN CONFIGURATION • Large collector current • Low collector-emitter saturation voltage. c DESCRIPTION <> PNP transistor in a plastic SC59

TRANSISTOR SMD MARKING CODE LF

Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
Contextual Info: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)

marking code C3 SMD ic

Abstract: marking code C3 SMD Transistor TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODES NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD 2X K TRANSISTOR SMD MARKING CODE smd transistor 2x TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR SMD MARKING CODE 2x I
Contextual Info: 2PD601ART 50 V, 100 mA NPN general-purpose transistor Rev. 01 — 15 March 2007 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB709ART.

TRANSISTOR SMD MARKING CODE 2x

Abstract: TRANSISTOR SMD MARKING CODES NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 3x TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR SMD 2X K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 210 C5 MARKING TRANSISTOR TRANSISTOR SMD MARKING CODE SP
Contextual Info: 2PB709ART 45 V, 100 mA PNP general-purpose transistor Rev. 01 — 19 March 2007 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD601ART.

TRANSISTOR SMD CODE PACKAGE SOT89

Abstract: PHILIPS MOSFET MARKING SC-62 SOT89 SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 3x K TRANSISTOR SMD MARKING CODE SMD MARKING CODE transistor SMD TRANSISTOR 2005
Contextual Info: 2PD2150 20 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 22 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424.

smd TRANSISTOR code marking 2007

Abstract: 2PB1424 2PD2150 TRANSISTOR SMD MARKING CODE 3x sot89 footprint nxp marking code M2
Contextual Info: 2PD2150 20 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 2 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

smd TRANSISTOR code marking 2007

Abstract: SMD CODE PACKAGE SOT89 006aaa231 TRANSISTOR SMD CODE PACKAGE SOT89 2PB1424 2PD2150 SMD CODE PACKAGE SOT89-4 sot89 bv
Contextual Info: 2PB1424 20 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 15 January 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

Contextual Info: CMST5086 CMST5087 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST5086, CMST5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package,

CMST5086

Abstract: CMST5087
Contextual Info: CMST5086 CMST5087 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-323 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature

smd transistor w1a

Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: Hardware Documentation Data Sheet HAL 1820 Programmable Linear Hall Effect Sensor Edition April 28, 2011 DSH000158_001EN HAL 1820 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software

E142 wafer format

Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
Contextual Info: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved”