TRANSISTOR MARKING CODE XF Search Results

Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23

Q62702-C2445

Contextual Info: BCR 512 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 512 XFs 1=B Q62702-C2445 Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: BCR512 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7kΩ, R2= 4.7kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

BCR512

Abstract: BCW66
Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2 = 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package

c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Contextual Info: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage

sot-23 marking code Ks

Abstract: TRANSISTOR MARKING CODE XF LDO marking code AL
Contextual Info: ANALO G ► D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting

Contextual Info: ANALO G D E V IC E S FEATURES ± 1.2% Accuracy Over Line and Load Regulations @ 25°C U ltralo w Dropout Voltage: 80 m V Typical @ 50 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Transistor TT 2140

Abstract: lithium ion battery charger
Contextual Info: rSJTOKO TK732xx LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External PNP Transistor Battery Powered Systems Cellular Telephones ■ Internal Short Circuit Protection Cordless Telephones ■ Excellent Load Regulation

AN-994

Abstract: IRF740A 12V 10A SMPS 6-0A36 IRF740AS
Contextual Info: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Intersil

Abstract: MOSFET TRANSISTOR SMD MARKING CODE ZA TSMC 0.13um process specification transistor smd marking za sot-23
Contextual Info: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: ANALOG D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

TRANSISTOR 185

Abstract: flyback xfmr AN1001 AN-994 IRF730A IRL3103L
Contextual Info: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: DAC161S997 www.ti.com SNAS621 – JUNE 2013 16-bit SPI Programmable DAC for 4-20mA Loops Check for Samples: DAC161S997 FEATURES DESCRIPTION • • • • • • • • The DAC161S997 is a very low power 16-bit ΣΔ digital-to-analog converter DAC for transmitting an

Contextual Info: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

AN-994

Abstract: IRF740A
Contextual Info: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic