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    TRANSISTOR MARKING CODE TX Search Results

    TRANSISTOR MARKING CODE TX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR MARKING CODE TX Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 32E D • fi23b32G 0017243 T ISIP S M B T 4124 NPN Silicon Sw itching Transistor -SIEMENS/ SPCL-, SEMICONDS • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for versions in bulk Ordering code for


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    fi23b32g23b320qg17245 PDF

    Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


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    q68000-a4417ot-23ehp00770ehp00772+4s35bo01ees4sa235b05012254b PDF

    Contextual Info: SIEMENS PZT 3904 NPN Silicon Switching Transistor • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3904


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    q62702-z2029ot-223d1e2m74d12hm7s PDF

    mw 772

    Abstract: 12L marking
    Contextual Info: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration RAs Q62702-F1222 1 =C 2= E Package 3=B II Marking BF 772 LU Type SOT-143


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    q62702-f1222ot-143mw 77212l marking PDF

    s149

    Abstract: transistor Siemens 14 S S 92
    Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking


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    e6325ss149q62702-s623q67000-s252+2s149transistor siemens 14 s s 92 PDF

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Contextual Info: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


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    2sa1037aksc-88a-50/ia-50pa+11--12vac2212sc1412ve00l1102fms2adual transistorstransitron2sc1412kums2n2sc241zk PDF

    transistor BC 536

    Abstract: aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor
    Contextual Info: BU 536 TTdUFHiKiKIiM electronic Creati»Technologies' Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique Short switching time • Glass passivation Power dissipation 62 W • High reverse voltage


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    v777-t012615a3d1n15a3din+10transistor bc 536aeg power base 60 btransistor bu 536transistor bu 311marking jmt0p3bu 103a transistorbu536bc 536bc 536 transistor PDF

    921TS

    Abstract: transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T
    Contextual Info: TELEFUNKEN ELECTRONIC 17E I • a^SOG^b OOO^blR 5 BIALGG S 920 TS • S 922 TS ÜK1 e le c tro n ic Cre^tfwTechrtoJog*j Silicon NPN Epitaxial Planar RF Transistors ^ ^ Applications: For telephone sets, telecommunication circuits, hybrid circuits, video driver and power


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    15a3din921tstransistor bf 235din41869+2marking code c4 sot 23-5s920t PDF

    smd rf transistor marking

    Abstract: STANDARD DIN 6784 TRANSISTOR SMD MARKING CODE 210 TRANSISTOR SMD MARKING CODE TX MMIC SOT 363 marking CODE 06 smd transistor 637
    Contextual Info: GaAs MMIC CSH 210 Target Data Sheet • • • • • • TX/RX- and diversity switch for mobile communications GaAs PHEMT technology Low insertion loss No supply voltage needed Positive operating voltage P-SOT363-6-1 package 2 mm x 2 mm SOT 363 ESD: Electrostatic discharge sensitive device,


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    p-sot363-6-1gps05604smd rf transistor markingstandard din 6784+4transistor smd marking code 210transistor smd marking code txmmic sot 363 marking code 06smd transistor 637 PDF

    Contextual Info: GaAs MMIC CSH 210 Target Data Sheet • • • • • • TX/RX- and diversity switch for mobile communications GaAs PHEMT technology Low insertion loss No supply voltage needed Positive operating voltage P-SOT363-6-1 package 2 mm x 2 mm SOT 363 ESD: Electrostatic discharge sensitive device,


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    p-sot363-6-1gps05604 PDF

    UE-111AJ

    Abstract: nitto SWT-20 transistor marking PB nitto UE111AJ ke marking transistor 2091J Nitto marking code transistor HK mas1025 UE111
    Contextual Info: 1 PRODUCT CODING SYSTEM 9.12.2004 QSP0005_WEB.026 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document: ESD EWS ID MBB T&R 2 Electrostatic Sensitive Device


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    qsp0005mas1025acmas1025acsaxxmas9124aacaxx+10ue-111ajnitto swt-20transistor marking pbnitto ue111ajke marking transistor2091jnittomarking code transistor hkmas1025ue111 PDF

    ic 555

    Abstract: transistor MARKING CODE TX marking W4s ic555 IC 555 as temperature controller
    Contextual Info: BCR400W Active Bias Controller 3 Characteristics 4  Supplies stable bias current even at low battery voltage and extreme ambient temperature variation  Low voltage drop of 0.7V 2 Application notes 1  Stabilizing bias current of NPN transistors 4 and FET's from less than 0.2mA up to


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    bcr400wvps05605200maeha07188+6ot343ic 555transistor marking code txmarking w4sic555ic 555 as temperature controller PDF

    TRANSISTOR SMD MARKING CODE TX

    Abstract: smd code book transistor smd rf transistor marking 210p EHT09254 MMIC SOT 363 marking CODE 06
    Contextual Info: GaAs MMIC CSH 210P Target Data Sheet • • • • • • • TX/RX- and diversity switch for mobile communications GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage range: 2.7 to 5 V P-SOT363-6-1 package 2 mm x 2 mm


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    p-sot363-6-1gps05604transistor smd marking code txsmd code book transistor+4smd rf transistor marking210peht09254mmic sot 363 marking code 06 PDF

    Contextual Info: GaAs MMIC CSH 210P Target Data Sheet • • • • • • • TX/RX- and diversity switch for mobile communications GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage range: 2.7 to 5 V P-SOT363-6-1 package 2 mm x 2 mm


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    p-sot363-6-1gps05604 PDF

    IC 555

    Abstract: marking w4s application note ic 555 transistor MARKING CODE TX IC555 BCR400 BCR400W BGA420 ic 555 timer working
    Contextual Info: BCR400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery 3 voltage and extreme ambient temperature variation 2 4 1 • Low voltage drop of 0.7V Application notes 4 • Stabilizing bias current of NPN transistors 3


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    bcr400w200maeha07188ot343+8ic 555marking w4sapplication note ic 555transistor marking code txic555bcr400bga420ic 555 timer working PDF

    IC 555

    Abstract: IC555 726-BCR400WH6327 npn marking tx marking w4s NPN 400W marking transistor RF BCR400WH6327
    Contextual Info: BCR400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery 3 voltage and extreme ambient temperature variation 2 4 1 • Low voltage drop of 0.7V Application notes 4 • Stabilizing bias current of NPN transistors 3


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    bcr400w200maeha07188ot343+9726-bcr400wh6327h6327ic 555ic555npn marking txmarking w4snpn 400wmarking transistor rfbcr400wh6327 PDF

    Contextual Info: BCR400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery 3 voltage and extreme ambient temperature variation 2 4 1 • Low voltage drop of 0.7V Application notes 4 3 • Stabilizing bias current of NPN transistors


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    bcr400w200maeha07188ot343 PDF

    IC 555

    Abstract: IC555 marking W4s marking transistor RF
    Contextual Info: BCR400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery 3 voltage and extreme ambient temperature variation 2 4 1 • Low voltage drop of 0.7V Application notes 4 3 • Stabilizing bias current of NPN transistors


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    bcr400w200maeha07188ot343+4ic 555ic555marking w4smarking transistor rf PDF

    nitto SWT 10

    Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
    Contextual Info: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device


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    qsp0005mas1234ab3mas1234ab3xxxxx98aa2+11mas9198aa2xxxxxnitto swt 10nitto swt-20w07 sot 23w04 transistor sot 23ue-111ajw04 sot 23transistor w07transistor marking w08marking w07transistor marking w04 PDF

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


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    tlp227gatlp227gtlp227g/tlp597ga/tlp227ga-2p421 coupler+9moc604acny17-3ztlp250 mosfet driver application notetlp250 mosfet driverp421 photocouplercny17-2ztransistor ac125tlp181 smd 11-4c1 typemoc3041 application note PDF

    Power mosfet transistor sot

    Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57A Typ Supply Current 1A Output Current 0.5A Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A


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    tc105300khzot-23asc-74a+2ds21349c-pagepower mosfet transistor sot PDF

    Contextual Info: TXS0102 SCES640D – JANUARY 2007 – REVISED MARCH 2011 www.ti.com 2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS Check for Samples: TXS0102 FEATURES 1 • • 2 • • • • • • • No Direction-Control Signal Needed


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    txs0102sces640d PDF

    Contextual Info: TXS0102 SCES640D – JANUARY 2007 – REVISED MARCH 2011 www.ti.com 2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS Check for Samples: TXS0102 FEATURES 1 • • 2 • • • • • • • No Direction-Control Signal Needed


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    txs0102sces640d PDF

    Contextual Info: TXS0102 SCES640D – JANUARY 2007 – REVISED MARCH 2011 www.ti.com 2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS Check for Samples: TXS0102 FEATURES 1 • • 2 • • • • • • • No Direction-Control Signal Needed


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    txs0102sces640d PDF