TRANSISTOR MARKING CODE LG Search Results

transistors marking C3Z

Contextual Info: Centrar CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.

sot marking code ZS

Contextual Info: BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 775A SOT-23 LGs Q62702-F1250 1=B

702 Z TRANSISTOR

Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
Contextual Info: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W

marking code 533

Abstract: bcr533
Contextual Info: SIEMENS BCR 533 NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R2=10ki2 XCs Pin Configuration 1 =B Q62702-C2382 Package O il CO Marking Ordering Code BCR 533 Ui II eg

D1733

Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Contextual Info: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

Contextual Info: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA

BCR198

Abstract: KTY 120
Contextual Info: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C

BFR15A

Contextual Info: SIEM EN S NPN Silicon RF Transistor BFR 15A • For broadband amplifiers up to 1 G H z at collector currents up to 20 mA. E S D : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR15A B F R 15A Q62702-F460

TRANSISTOR d1760

Abstract: 2SD1760F5
Contextual Info: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

BU 508 transistor

Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
Contextual Info: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique

transistor Bf 966

Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
Contextual Info: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners

SOT 86 MARKING 03

Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Contextual Info: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S

Contextual Info: Central“ CMST2907A Semiconductor Corp. SURFACE MOUNT SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed

p592

Contextual Info: Central" MMPQ6700 Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON QUAD TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ6700, consisting of two complementary pairs of transis­ tors, available in the SOIC-16 surface mount package, is designed for general purpose amplifi­

Contextual Info: Central“ MMPQ2222A Semiconductor Corp. SURFACE MOUNT NPN SILICON QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.

nitto SWT 10

Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Contextual Info: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device

Contextual Info: Central" CMPT2484 Semiconductor Corp. NPN SILICON LOW NOISE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2484 type is an NPN silicon low noise transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise

Contextual Info: Central" Sem iconductor Corp. CMPT4033 PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general

Contextual Info: Central" Sem iconductor Corp. CMPT930 NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT930 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

Contextual Info: Central semiconductor Corp. CMPT4033 PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general

Contextual Info: Central Semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general

Contextual Info: Central CMPT5401 Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.