TRANSISTOR MARKING C3 Search Results

marking C3Z

Abstract: marking C3Z SOT23 CMPTA44 npn 400V sot-23
Contextual Info: Central CMPTA44 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z

transistors marking C3Z

Contextual Info: Centrar CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.

Contextual Info: Central CMPTA44 Sem iconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.

318M

Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ

Contextual Info: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: SIEMENS BF 777 NPN Silicon RF Transistor Preliminary Data • For UHF/VHF frequency converters and local oscillators. • /T = 2.2 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BF 777

Contextual Info: SIEM ENS BFR 91A NPN Silicon RF Transistor • For low-distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

bft97

Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
Contextual Info: SIEM ENS BFT 97 NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

Contextual Info: SIEMENS PNP Silicon RF Transistor BFQ 76 • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFQ 71 NPN . ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Transistor BFR 97

Abstract: bfr 49 transistor BFR34A
Contextual Info: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1

Contextual Info: SIEMENS BFQ 75 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. • Complementary type: BFQ 72 NPN . ESD. Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

BFW92

Contextual Info: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

H6N03LB

Abstract: IPSH6N03LB IPUH6N03LB JESD22 H6N03
Contextual Info: Type IPUH6N03LB OptiMOS 2 Power-Transistor IPSH6N03LB Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.3 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

05N03LB

Abstract: 05n03l 05N03 IPD05N03LB JESD22 PG-TO252-3-11 C3420
Contextual Info: Type IPD05N03LB G OptiMOS 2 Power-Transistor IPS05N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.8 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)

12N03L

Abstract: 12n03lb 12n03 IPD12N03LB PG-TO252-3-11
Contextual Info: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)

S3V 05

Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3

e2 marking SOT

Abstract: DTC143Z HBA143ZS6R HBC143ZS6R marking 7K RBE1
Contextual Info: Spec. No. : C371S6R Issued Date : 2003.09.05 Revised Date : Page No. : 1/3 CYStech Electronics Corp. Dual NPN Digital Transistors HBC143ZS6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

DTC114T

Abstract: HBA114TN6R HBC114TS6R marking 7E transistor marking code 7e
Contextual Info: Spec. No. : C353S6R Issued Date : 2003.05.23 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Dual NPN Digital Transistors HBC114TS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

DTC143T

Abstract: HBA143TS6R HBC143TS6R
Contextual Info: CYStech Electronics Corp. Spec. No. : C369S6R Issued Date : 2003.05.23 Revised Date : Page No. : 1/4 Dual NPN Digital Transistors HBC143TS6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

CYStech Electronics

Abstract: DTC144E HBA144ES6R HBC144ES6R MARKING 7C
Contextual Info: Spec. No. : C372S6R Issued Date : 2003.05.23 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Dual NPN Digital Transistors HBC144ES6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

DTC114Y

Abstract: HBA114YS6R HBC114YS6R transistor marking 7D marking 7d sot-323
Contextual Info: Spec. No. : C355S6R Issued Date : 2003.05.23 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Dual NPN Digital Transistors HBC114YS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

UL94V-0 inverter

Abstract: DTC124X HBA124XS6R HBC124XS6R RB222
Contextual Info: Spec. No. : C366S6R Issued Date : 2003.05.28 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Dual NPN Digital Transistors HBC124XS6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input