TRANSISTOR MARKING C Y Search Results

KTD1624

Abstract: mark A sot-89 MARK Y B Y device marking SOT89 transistor marking transistor marking c
Contextual Info: SEMICONDUCTOR KTD1624 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark Y KTD1624 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only

mark A sot-89

Abstract: KTD1003
Contextual Info: SEMICONDUCTOR KTD1003 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark L KTD1003 * Grade A A,B,C Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

mark A sot-89

Abstract: KTB1124 transistor marking c
Contextual Info: SEMICONDUCTOR KTB1124 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark X KTB1124 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only

mark A sot-89

Abstract: KTC4377
Contextual Info: SEMICONDUCTOR KTC4377 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark S KTC4377 * Grade A A,B,C,D Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

M8050

Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11

M8050

Abstract: m8050 NPN equivalent M8050 equivalent
Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

STS9013

Abstract: STS9012
Contextual Info: STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features C B E • Excellent hFE linearity. • Complementary pair with STS9012 E TO-92 Ordering Information Type NO. STS9013 Marking

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

ts 4141 TRANSISTOR smd

Abstract: CMBT2484
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

marking 68g

Abstract: smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

Contextual Info: STD5915 NPN Silicon Power Transistor Features PIN Connection • High Voltage, high speed switching  VCEO sus =530V  Suitable for Switching Regulator and Motor Control, Electronic Ballast C C E B B Ordering Information Type NO. Marking Package Code STD5915

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

CSA1162

Contextual Info: 23633*14 DOOOab? 23M LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G —3F _3.0_ 3 Pin configuration 1 = BASE 2 = EM ITTER 3 = C O L LE C T O R 0.48

pnp transistor 1000v

Abstract: TS665 FMMT596 FMMT596TA TS16949 PNP 1000V 100a
Contextual Info: FMMT596 SOT 23 PNP silicon planar high voltage transistor Ordering information Device Reel size inches Tape width (mm Quantity per reel 7 8 3,000 FMMT596TA Device marking C E 596 C B B Pinout - top view E Absolute maximum ratings Parameter Symbol Value Unit

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

BC846E

Abstract: BC846 BC856
Contextual Info: BC856 PNP Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application C Features B • High voltage : VCEO=-55V • Complementary pair with BC846 E SOT-23 Ordering Information Type NO. BC856 Marking Package Code

D1638

Abstract: marking 9AW CSD1638
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD1638 9AW TO126 MARKING : CDIL D1638 Low Freq. Power Amp. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL

STS8050

Abstract: STS8550
Contextual Info: STS8050 Semiconductor NPN Silicon Transistor Descriptions PIN Connection • High current application  Radio in class B push-pull operation E Feature B C  Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 9AW TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSB1272 9AW TO126 MARKING : CDIL B1272 Low Freq. Power Amp. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL

CFD811

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFD811 9AW TO-220FP MARKING : CFD 811 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

1370E

Abstract: CSB1370 CSB1370E
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 9AW TO-220 MARKING : AS BELOW Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL

CN1016

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1016 9AW TO-3P MARKING:- ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 160 Collector -Base Voltage