TRANSISTOR MARKING A02 Search Results

Contextual Info: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings

JESD22a121

Abstract: marking A02 KTMC1060SC MMBT2222AT JESD22A111
Contextual Info: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings

Contextual Info: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings

C2320

Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
Contextual Info: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W

s791

Abstract: transistor B 722
Contextual Info: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain

DIN125A

Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472
Contextual Info: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:

Contextual Info: TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

h833

Abstract: 1N914 HV833 HV833MG HV833MG-G 29nF A021909
Contextual Info: HV833 High Voltage EL Lamp Driver Features General Description ► 1.8 to 6.5V operating supply voltage ► DC to AC conversion ► Separately adjustable lamp and converter frequency ► Output voltage regulation ► Enable/disable function ► Patented output timing for high efficiency

transistor D361

Abstract: design ideas el inverter transistor marking A02 1ddd365aa bujeon diode MARKING CODE 917 sumida lcd inverter pin diagram sumida inverter D361
Contextual Info: Data Sheet D365A Electroluminescent Lamp Driver IC General Description: The Durel D365 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance, and simplify the design of EL backlighting systems. The D365 IC and

Contextual Info: P & 2SA812S SEMICONDUCTOR FORW ARD INTERNATIONAL B L B C IR O H R S LTD. T EC H N IC A L DATA PNP EPITAXIAL SILICON TRANSISTOR L O W FR E Q U E N C Y A M PL IFIE R Package: SOT-23 * Complement to2SC1623S * Collector-Base Voltage: Vcbo—60V * Excellent Hfe linearity.

MMRF1019NR4

Contextual Info: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

SITP

Abstract: TP0604 TP0604N3 SOW MARKING
Contextual Info: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown

sitn

Abstract: marking n3 TN0604N3-G 125OC TN0604 TN0604WG-G 3V02 D0804 SiTN 06
Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0604WG-G

Abstract: 75E1 TN0604 TN0604N3-G
Contextual Info: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: VEC2102 Ordering number : ENA0291 VEC2102 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • Composite type with 2 PNP transistors contained in a single package, facilitating high-density mounting.

johanson

Contextual Info: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

QFN PACKAGE thermal resistance

Abstract: 1N4148 HV861 HV861K7-G LPS4012 MO-220 transistor marking CS
Contextual Info: HV861 Dimmable, Low Noise, Dual EL Lamp Driver The device uses a single inductor and a minimum number of passive components. Using the internal reference voltage, the regulated output voltage is at a nominal value of 90V. The EL Lamps will therefore see ±90V. The two EL Lamps

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP0106

Contextual Info: VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

TRANSISTOR N3

Abstract: vp0104
Contextual Info: VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0104 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing