TRANSISTOR MARKING 7D Search Results

BSS139

Abstract: kds 7g marking HSs SOT23 MARKING KDS SOT-23 marking BSs sot23 siemens
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • BSS 139 VDS ID 250 V 0.04 A -^DS on 100 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Pin C onfigu ration Marking Tape and Reel Information

BSP320

Contextual Info: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol

ss129

Abstract: transistor marking 7D
Contextual Info: SIPMOS Small-Signal Transistor BSS 129 • Vds • ID • • • • • 240 V 0.15 A ^D S on 2 0 Q N channel Depletion mode High dynamic resistance Available grouped in Vg^ Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking BSS 129 Q62702-S015 E6288:1500 pcs/reel;

Contextual Info: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998

toshiba M7

Contextual Info: TO SH IB A TENTATIVE 2SC5091F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF —l.ld B , |S2lel2= 7dB f = 1GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

toshiba M7

Abstract: 2SC5091 2SC5091F transistor ESM
Contextual Info: 2SC5091F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2le|2= 7dB f=lGHz 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING

Contextual Info: TOSHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER Output Power Power Gain Drain Efficiency P O = 7 -5 W GP= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C

Contextual Info: TO SHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W GP ^11.7dB 7D^50% M A X IM U M RATINGS Ta = 25°C

Contextual Info: TO SHIBA 2SC5091FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r i n Q i F T Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = l.ld B , |S 2 ie l 2 = 7dB f=lG H z 1.2 ±0.05 M A X IM U M RATINGS (Ta = 25°C)

SMUN5211DW

Abstract: Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363
Contextual Info: SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are

BF960

Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
Contextual Info: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz

transistor CQ 735

Abstract: 2SC4853 ZS21 4578a
Contextual Info: Ordering number:EN 4578A SAMYO N0.4578A 2SC4853 NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amp Applications i F eatu res • Low-voltage, low-current operation : fr=5G H z typ. VCE = IV, Ic = 1mA : I S21e I2= 7dB typ (f = 1GHz).

BT 1496

Abstract: ic 7472 2SC5091
Contextual Info: TOSHIBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 7dB f=lG H z Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

TRANSISTOR KT 838

Abstract: KT 819 transistor 2SC4854
Contextual Info: Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz).

2SC5091

Contextual Info: TO SH IBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.l d B , |S2lel2= 7dB f= lG H z Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)

7472 ci

Abstract: IC 4407 2SC5091 ic 1496 specifications
Contextual Info: TOSHIBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 7dB f=lG H z Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

led driver using the diode 1N4007

Abstract: EER1616 EE1616
Contextual Info: www.fairchildsemi.com FSD210B, FSD200B Green Mode Fairchild Power Switch FPSTM Features • Single Chip 700V Sense FET Power Switch for 7DIP • Precision Fixed Operating Frequency (134KHz) • FSD210B Consumes Under 0.1W at 265VAC & No Load with Advanced Burst-Mode Operation

piezoelectric mobile charger

Abstract: transformer smps 300R FSD210 8-pin EER1616 SMPS 300R ee1616 230 AC to 12V 5W led circuit FSD210B FSDH565 12v mobile phone charger circuit diagram
Contextual Info: www.fairchildsemi.com FSD210B, FSD200B Green Mode Fairchild Power Switch FPSTM Features • Single Chip 700V Sense FET Power Switch for 7DIP • Precision Fixed Operating Frequency (134KHz) • FSD210B Consumes Under 0.1W at 265VAC & No Load with Advanced Burst-Mode Operation

BP317

Abstract: MMBTA42 MMBTA92 254-D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN

Contextual Info: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).

Contextual Info: T O SH IB A 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 1 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 7dB f=lG H z Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

TA-2425

Abstract: 2SC5537 ENN6340 26GHz
Contextual Info: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).

2SC5537

Abstract: ic 723 cn
Contextual Info: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).