TRANSISTOR MARKING 6A Search Results

CSD611

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD611 9AW TO-220 MARKING : CSD 611 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

marking 9AW

Abstract: CFD611 transistor 9AW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFD611 9AW TO-220FP MARKING : CFD 611 B CE Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS (Ta=25deg C)

CSB612

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSB612 9AW TO-220 MARKING : CSB 612 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

CP107

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP107 9AW TO-220 Non- Iso MARKING: CP 107 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage

MARKING SMD npn TRANSISTOR 1a

Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

MARKING SMD PNP TRANSISTOR 2a

Abstract: MARKING SMD pnp TRANSISTOR 790 vce 24 icm 1a SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR TRANSISTOR SMD 1a 9 TRANSISTOR SMD PNP 1A FCX790A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

smd marking 619

Abstract: npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.

DXT790A

Abstract: DXT790AP5-13 DXT790AP5 dxt790
Contextual Info: A Product Line of Diodes Incorporated DXT790AP5 40V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 40V IC = 3A; ICM = 6A

ZXTN

Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN2010GTA

Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

FMMT718

Abstract: sot-23 15V vebo pnp
Contextual Info: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current

ZXTP25 20V 6A

Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
Contextual Info: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

HV cascode smps

Abstract: C06IE170HV JESD97 STC06IE170HV
Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

smd transistor MARKING 2A

Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

ZXTN19020DZ

Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Contextual Info: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

Transistor 8fc

Abstract: marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF BC817W
Contextual Info: BC817W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations

STC6NF30V

Abstract: C6NF30V JESD97
Contextual Info: STC6NF30V N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type VDSS RDS on ID STC6NF30V 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A • Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR  FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT)  ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R

UN1518

Abstract: UN1518L-AE3-R UN1518G-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) „ ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R

100 6n

Abstract: Device marking 6k mun5113t1 MUN5111T1 MUN5112T1 MUN5113T3 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

JESD97

Abstract: S01DTP06 STS01DTP06 complementary bipolar transistor driver schematic
Contextual Info: STS01DTP06 Dual NPN-PNP complementary Bipolar transistor General features VCE sat hFE IC 0.35V >100 1A • High gain ■ Low VCE(sat) ■ Simplified circuit design ■ Reduced component count SO-8 Applications ■ Push-Pull or Totem-Pole configuration ■

LMUN5113T1G

Abstract: LMUN5111T1G LMUN51xxT1G LMUN5112T1G LMUN5113T1 LMUN5114T1G LMUN5112
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN51xxT1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor