TRANSISTOR MARKING 6A Search Results

marking 9AW

Abstract: CFB612 transistor 3005 2
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFB612 9AW TO-220FP MARKING : CFB 612 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

CN1016

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1016 9AW TO-3P MARKING:- ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 160 Collector -Base Voltage

CP1016

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP1016 9AW TO-3P MARKING:- ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 160 Collector -Base Voltage

CSD611

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD611 9AW TO-220 MARKING : CSD 611 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

marking 9AW

Abstract: CFD611 transistor 9AW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFD611 9AW TO-220FP MARKING : CFD 611 B CE Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS (Ta=25deg C)

CSB612

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSB612 9AW TO-220 MARKING : CSB 612 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFD611 9AW TO-220FP MARKING : CFD 611 B CE Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS (Ta=25deg C)

CP107

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP107 9AW TO-220 Non- Iso MARKING: CP 107 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage

transistor BC 310

Abstract: 6C TRANSISTOR MARKING BC817-16 BC817-25 BC817-40 A66B
Contextual Info: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A6/6B/6C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage

KSA3010

Abstract: KSA3010OTU KSA3010RTU KSC4010 I22 marking A3010R transistor marking 020
Contextual Info: KSA3010 PNP Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC = - 6A High Power Dissipation Wide S.O.A Complement to KSC4010 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted

NPN Transistor TO92 300ma

Abstract: npn 120v 10a transistor Silicon NPN Epitaxial Planar Type TSC5988 NPN Silicon Epitaxial Planar Transistor to92 60V transistor npn 2a POWER AND MEDIUM POWER TRANSISTOR
Contextual Info: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure

transistor C5001

Abstract: C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R marking code Yb Transistor 2SC5001F5 2sc4939 CC OWV W
Contextual Info: 2SC4939 Transistor, NPN Features • available in PSD package • high-speed switching, typically, tf < 0.3 |xs for lc = 6A • low collector saturation voltage, typically VcE sat ^0-3 Vfor lc/lB = 6A/0.3A • wide safe operating area (SOA) Applications • high speed dc-dc converter

MARKING SMD npn TRANSISTOR 1a

Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

MARKING SMD PNP TRANSISTOR 2a

Abstract: MARKING SMD pnp TRANSISTOR 790 vce 24 icm 1a SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR TRANSISTOR SMD 1a 9 TRANSISTOR SMD PNP 1A FCX790A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

smd transistor 718

Abstract: MARKING SMD PNP TRANSISTOR 718 MARKING SMD PNP TRANSISTOR 2a FCX718 transistor smd 6a 6a smd transistor MARKING SMD PNP TRANSISTOR smd 6a transistor
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.

DXT790A

Abstract: DXT790AP5-13 DXT790AP5 dxt790
Contextual Info: A Product Line of Diodes Incorporated DXT790AP5 40V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 40V IC = 3A; ICM = 6A

ZXTN

Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

G5016

Abstract: G5016KD1U MARKING CODE CT2
Contextual Info: G5016 Global Mixed-mode Technology Dual Ultra-Low On-Resistance Load Switch with Controlled Turn-On Features General Description „ „ „ „ „ „ „ The G5016 is dual N-channel MOSFET power switch designed for high-side load-switching applications, and the device has a typical RDS ON of 16mΩ and the output current is limited to 6A. Each switch is independently controlled by an on/off input (EN1, EN2), which is

ZXTN2010GTA

Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

T14P12DX

Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
Contextual Info: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

ZXTN

Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

t14n50

Abstract: JEDEC MO-187 MO-187 ZXT14N50DX ZXT14N50DXTA ZXT14N50DXTC DSA0037473 A1BL
Contextual Info: ZXT14N50DX SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 17m ; IC= 6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

X5T851

Abstract: bv 42 TRANSISTOR equivalent
Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in

SOT89 transistor marking 4A

Abstract: SOT89 transistor marking 4A high frequency ZXTN19055DZTA ZXTN19055DZ s75 transistor
Contextual Info: ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 55V IC cont = 6A VCE(sat) < 60mV @ 1A RCE(sat) = 28m⍀ PD = 2.1W Description C Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC