TRANSISTOR MARKING 4D Search Results

transistor marking 4D

Abstract: transistor laser sot-89 marking KIA7425F
Contextual Info: SEMICONDUCTOR KIA7425F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 4D KIA7425F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

transistor marking 4D

Abstract: PNP 400V MMBTA44 MMBTA94
Contextual Info: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code

MMBTA94

Contextual Info: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  A High Voltage Transistor L 3 3 C B Top View MARKING 1 1 2 K 4D E 2 D PACKAGE INFORMATION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA94 TRANSISTOR PNP SOT–23 FEATURES  High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER

9019 transistor

Abstract: 9019 sts9018
Contextual Info: STS9018 Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Max. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

STS9018

Contextual Info: STS9018 NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application PIN Connection C Features B C • Low noise figure : NF = 4dB Max. at f=100MHz • High transition frequency fT = 800MHz(Typ.)

6251-465-4DS

Abstract: 525k hall SMD marking codes Hall sensors
Contextual Info: MICRONAS Edition Aug. 8, 2002 6251-465-4DS HAL525, HAL535 Hall Effect Sensor Family MICRONAS HAL525, HAL535 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts

stc*9018

Abstract: STC9018N STC9018
Contextual Info: STC9018N Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

STC9018SF

Abstract: STC9018 KSD-T5C007-000
Contextual Info: STC9018SF Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

2SC4244

Contextual Info: TOSHIBA 2SC4244 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4244 Unit in mm UHF TV TUNER RF AMPLIFIER APPLICATIONS • • • Low Noise Figure : NF = 4dB Typ. High Power Gain : Gpb = 17dB (Typ.) Excellent Forward AGC Characteristics MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Cam Positioner H8PS CSM_H8PS_DS_E_5_1 This Compact Cam Positioner, Popular for Its Ease-of-use, Now Comes with Even Better Functions. • Compact 8-, 16-, and 32-output Models available that are 1/4DIN size at 96 x 96 mm. • High-speed operation at 1,600 r/min and high-precision settings

2SC4244

Abstract: NPN TRANSISTOR SC-70
Contextual Info: TOSHIBA 2SC4244 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4244 UHF TV TUNER RF AMPLIFIER APPLICATIONS. Unit in mm 2.1 ±0.1 • Low Noise Figure : NF = 4dB Typ. • High Power Gain : Gpb = 17dB (Typ.) • Excellent Forward AGC Characteristics

transistor BC 339

Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Contextual Info: DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification Supersedes data of 1997 May 26 File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS PHILIPS Philips Semiconductors Product specification

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

transistor SOT23 4d

Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching

transistor SOT23 4d

Abstract: pnp transistor 300v sot23 pnp low saturation transistor sot23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 *Telephone switching

Contextual Info: MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application No Suffix • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C

NEC 2501

Abstract: TC-2178 resistor UJ marking
Contextual Info: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

Contextual Info: b b S B ' m 0054484 015 * A P X Philips Semiconductors PNP general purpose transistor BC859W; BC860W AUER PHILIPS/DISCRETE FEATURES Product specification b?E PIN CONFIGURATION • S- mini package. • Low noise JEL?_EL 1 c DESCRIPTION PNP transistor in a plastic SOT323

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

Contextual Info: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch

MC 3041 opto

Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE

Burr Brown part marking

Abstract: burr brown Heat sink OPA512SM
Contextual Info: HE D I 1 7 3 1 3 h S QDlS3bS BURR-BROWN 4 I COMPONENTS OPA512SM/883B OPA512SM/883B BURR —BROUN CORP REVISION NONE FEBRUARY, 1989 High Current, High Power, Hybrid MILITARY OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • •