TRANSISTOR MARKING 2A H Search Results
TRANSISTOR MARKING 2A H Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5962-8672601EA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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| 54F151/BEA |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F151/B2A |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) |
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| 5962-8672601FA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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TRANSISTOR MARKING 2A H Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STB1277
Abstract: Transistor TRANSISTOR stb1277 STD1862
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STB1277 STD1862 KST-9035-002 STB1277 Transistor TRANSISTOR stb1277 STD1862 | |
SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
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OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906 | |
KST3906
Abstract: WH*s
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KST3906 OT-23 KST3906 WH*s | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration |
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OT-23 CMBT3906 C-120 | |
3906
Abstract: marking 2A transistor 3906 transistor marking code 7C
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OCR Scan |
Q68000-A8397 OT-89 3906 marking 2A transistor 3906 transistor marking code 7C | |
MMBT3906 UTCContextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) |
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MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. |
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MJE13005-K QW-R203-045 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. |
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13005EC QW-R213-022 | |
transistor mje13005 TO-126
Abstract: to-126 transistor case
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MJE13005 QW-R203-018. transistor mje13005 TO-126 to-126 transistor case | |
TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
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TSC5304ED O-251 O-252 TSC5304EDCP TSC5304EDCH O-252 75pcs marking E11 DIODE power transistor Ic 4A NPN to - 251 | |
J13007-2
Abstract: j13007 J-13007-2 transistor j13007 FJPF13007 F J13007-2 transistor J13007-1
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FJPF13007 FJPF13007 O-220F FJPF13007H2TTU FJPF13007TU J13007-2 j13007 J-13007-2 transistor j13007 F J13007-2 transistor J13007-1 | |
FJE5304DContextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application |
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FJE5304D FJE5304D O-126 | |
J13007-2
Abstract: J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 fjp13007tu F J13007-2 FJP13007H1TU
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FJP13007 FJP13007 O-220 FJP13007H1TU FJP13007H2TU FJP13007TU J13007-2 J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 F J13007-2 | |
Transistor A14Contextual Info: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2.5A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability |
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TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP 75pcs Transistor A14 | |
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trace code TO-220
Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
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FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D | |
c5305d
Abstract: npn 300V 2A transistor DSA0023737
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KSC5305D O-220 KSC5305D KSC5305DFTTU KSC5305DTU c5305d npn 300V 2A transistor DSA0023737 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 FEATURES SOT-223 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S SOT-89 APPLICATIONS * Audio power amplifier * DC-DC convertor |
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2SD882S OT-223 2SB772S OT-89 2SD882SL-x-AA3-R 2SD882SG-x-AA3-R 2SD882SL-x-AB3-R 2SD882SG-x-AB3-R 2SD882SL-x-T92-B 2SD882SG-x-T92-B | |
MMBT589Contextual Info: MMBT589 -1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications |
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MMBT589 OT-23 18-Oct-2013 MMBT589 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A) |
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2SA1300 -50mA) 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K OT-89 QW-R208-012 | |
d1691
Abstract: d1691-y D1691-G
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KSD1691 KSB1151 O-126 PW10ms, Cycle50% KSD1691 KSD1691GS KSD1691OS KSD1691YS d1691 d1691-y D1691-G | |
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Contextual Info: MMBT589 PNP General Purpose Transistor FEATURES • High current surface mount PNP silicon switching transistor for load management in portable applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI |
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MMBT589 OT-23 2002/95/EC | |
FZT753
Abstract: MARKING SMD PNP TRANSISTOR 2a smd transistor MARKING 2A TRANSISTOR SMD PNP 1A SMD TRANSISTOR transistor smd marking smd transistor smd transistor 2A
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FZT753 OT-223 -200mA* -100mA* -50mA, -500mA, -100mA, 100MHz -50mA FZT753 MARKING SMD PNP TRANSISTOR 2a smd transistor MARKING 2A TRANSISTOR SMD PNP 1A SMD TRANSISTOR transistor smd marking smd transistor smd transistor 2A | |
transistor marking 2A H
Abstract: STTA212S
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OCR Scan |
STTA212S transistor marking 2A H STTA212S | |
MMBT589Contextual Info: MMBT589 PNP General Purpose Transistor FEATURES • High current surface mount PNP silicon switching transistor for load management in portable applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI |
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MMBT589 OT-23 2002/95/EC MMBT589 | |