TRANSISTOR MARKING 2A H Search Results

STB1277

Abstract: Transistor TRANSISTOR stb1277 STD1862
Contextual Info: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92

SMD TRANSISTOR MARKING 2A pnp

Abstract: CMBT3906
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

KST3906

Abstract: WH*s
Contextual Info: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

3906

Abstract: marking 2A transistor 3906 transistor marking code 7C
Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings

MMBT3906 UTC

Contextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

transistor mje13005 TO-126

Abstract: to-126 transistor case
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

J13007-2

Abstract: j13007 J-13007-2 transistor j13007 FJPF13007 F J13007-2 transistor J13007-1
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted

FJE5304D

Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

J13007-2

Abstract: J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 fjp13007tu F J13007-2 FJP13007H1TU
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted

Transistor A14

Contextual Info: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2.5A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability

trace code TO-220

Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Contextual Info: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram

c5305d

Abstract: npn 300V 2A transistor DSA0023737
Contextual Info: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  1 FEATURES SOT-223 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S  SOT-89 APPLICATIONS * Audio power amplifier * DC-DC convertor

MMBT589

Contextual Info: MMBT589 -1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High current surface mount PNP silicon switching transistor for Load management in portable applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)

d1691

Abstract: d1691-y D1691-G
Contextual Info: KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W Ta=25°C • Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: MMBT589 PNP General Purpose Transistor FEATURES • High current surface mount PNP silicon switching transistor for load management in portable applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

FZT753

Abstract: MARKING SMD PNP TRANSISTOR 2a smd transistor MARKING 2A TRANSISTOR SMD PNP 1A SMD TRANSISTOR transistor smd marking smd transistor smd transistor 2A
Contextual Info: Transistors SMD Type PNP Silicon Planar Medium Power Transistor FZT753 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low saturation voltage +0.1 3.00-0.1 Excellent hFE specified up to 2A +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3

transistor marking 2A H

Abstract: STTA212S
Contextual Info: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 2A V rrm 1200V (typ) 65ns (max) 1.5V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPEFIATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION

MMBT589

Contextual Info: MMBT589 PNP General Purpose Transistor FEATURES • High current surface mount PNP silicon switching transistor for load management in portable applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI